TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
T4-LDS-0118 Rev. 1 (091095) Page 1 of 3
DEVICES LEVELS
2N3810 2N3811 JAN
2N3810L 2N3811L JANTX
2N3810U 2N3811U JANTV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 50 mAdc
One
Section 1 Both
Sections 2
Total Power Dissipation @ TA = +25°C PT 200 350 mW
Operating & Storage Junction Temperature
Range TJ, Tstg -65 to +200 °C
Note:
1. Derate linearly 1.143mW/°C for TA > +25°C (one section)
2. Derate linearly 2.00mW/°C for TA > +25°C (both sections)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100μAdc V(BR)CEO 60 Vdc
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 60Vdc ICBO 10
10
ηAdc
μAdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
VEB = 5.0Vdc IEBO 10
10 ηAdc
μAdc
TO-78
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
T4-LDS-0118 Rev. 1 (091095) Page 2 of 3
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
2N3810, 2N3810L , 2N3810U hFE 100
150
150
125
450
450
IC = 1.0μAdc, VCE = 5.0Vdc
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
2N3811, 2N3811L, 2N3811U hFE
75
225
300
300
250
900
900
Collector-Emitter Saturation Voltage
IC = 100μAdc, IB = 10μAdc
IC = 1.0mAdc, IB = 100μAdc VCE(sat) 0.2
0.25 Vdc
Base-Emitter Saturation Voltage
IC = 100μAdc, IB = 10μAdc
IC = 1.0mAdc, IB = 100μAdc VBE(sat) 0.7
0.8 Vdc
Base-Emitter Non-Saturation Voltage
VCE = 5.0Adc, IC = 100μAdc
VBE 0.7
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz
IC = 1.0mAdc, VCE = 5.0Vdc, f = 100MHz |hfe| 1.0
1.0
5.0
Small-Signal Short Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U hfe 150
300 600
900
Small-Signal Short Circuit Input Impedance
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U hje 3.0
3.0 30
40 kΩ
Small-Signal Short Circuit Output Admittance
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U
2N3811, 2N3811L , 2N3811U hoe 5.0 60
μmhos
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 5.0 pF
Input Capacitance
VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz CIbo 8.0 pF
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
T4-LDS-0118 Rev. 1 (091095) Page 3 of 3
DYNAMIC CHARACTERISTICS (cont.)
Parameters / Test Conditions Symbol Min. Max. Unit
Noise Figure
IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ 2N3810, L, U F1 7.0
IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ 2N3810, L, U F2 3.0
IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ 2N3810, L, U F3 2.5
IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ 2N3810, L, U F4 3.5
dB
IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ 2N3811, L, U F1 4.0
IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ 2N3811, L, U F2 1.5
IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ 2N3811, L, U F3 2.0
IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ 2N3811, L, U F4 2.5
dB
