er FAIRCHILD SEMICONDUCTOR a 3469674 FAIRCHILD SEMICONDUCTOR ese nage FAIRCHILD De A Schlumberger Company Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DG motor controls, relay and solenoid drivers. Vas Rated at +20 V @ Silicon Gate for Fast Switching Speeds fpss, Rpston) Specified at Elevated Temperature @ Rugged @ Low Drive Requirements @ Ease of Paralleling Maximum Ratings 84 ve S4Yb9b74 OO274e0 4 Zt . 84D 27820 D 2N6767/2N6768 N-Channel Power MOSFETs, 15 A, 350 V/400 V 1-39-13, Power And Discrete Division TO-204AA 2N6767 2N6768 Rating Symbo! Characteristic 2N6768 Rating 2N6767 Unit Voss Drain to Source Voltage 400 350 v Vocr Drain to Gate Voltage 400 Res = 1.0 M2 350 Vv Ves Gate to Source Voltage 20 +20 Vv Ta Tstg Operating Junction and Storage Temperatures -55 to +150 -55 to +150 C Th Maximum Lead Temperature 300 for Soldering Purposes, 1/16" From Case for 10 s 300 C Maximum On-State Characteristics Rogten) | Static Drain-to-Source 0.3 On Resistance 0.4 Q Ip Drain Current Continuous at Tg = 25C 14 Continuous at Tc = 100C 9.0 lpm Pulsed 252 12 7.75 202 Maximum Thermal Characteristics Rac Thermal Resistance, 0.83 Junction to Case 0.83 C/W Pp Total Power Dissipation at To = 25C 150 at To = 100C 60 1.50 60 Linear Derating Factor 1.2 1.2 W/C Notes All values are JEDEC registered except as noted. For information concerning connection diagram and package outline, refer to Section 7. 2-3374 0 S21 4 FAIRCHILD SEMICONDUCTOR BY pe s4n56 02? I 3469674 FAIRCHILD SEMICONDUCTOR : 84D 27821 D 2N6767/2N6768 T=39-13 Electrical Characteristics (Tc = 25C unless otherwise noted) i eT Symbol Characteristic | Min | Max | Unit Test Conditions Off Characteristics Viaryoss | Drain Source Breakdown Voltage? Vv Vas =0 V, Ip=1.0 mA 2N6768 4007 2N6767 350 loss Zero Gate Voltage Drain Current 1 mA Vps = Rated Vogs, Veg = 0 V 4 Vps = Rated Voss, i Ves =0 V, To = 125C : less Gate-Body Leakage Current +100 nA Ves =+20 V, Vps =0 V . On Characteristics : Vestn | Gate Threshold Voltage 2.0 4.0 Vv ip=1 MA, Vps = Vas Roston) | Static Drain-Source On-Resistance Q Veg = 10 V 2N6768 0.3 IDp=9.0 A 2N6767 0.4 Ip =7.75 A 2N6768 0.66 ID=9.0 A 2N6767 0.88 Ip = 7.75 A Vps(on) | Drain-Source On-Voltage Vv Ves = 10 V 2N6768 5.6 Ip=14A 2N6767 5.4 Ip=12A Gis Forward Transconductance 8.0 24 S (2) Vos 15 V, Ip=9.0 A Dynamic Characteristics Cigg Input Capacitance 1000 3000 pF Vos = 25 V, Vag =0 V Cass Output Capacitance 200 600 pF f= 1.0 MHz Crss Reverse Transfer Capacitance 50 200 pF Switching Characteristics (Tc = 25C, Figures 9, 10) ta(on) Turn-On Delay Time 35 ns Vpp = 180 V, Ip = 9.0 A t; Rise Time 65 ns poe ye Raen = 4.7 2 turott) Turn-Off Delay Time 150 ns te Fall Time 75 ns Q,g Total Gate Charge 420? nc Ves = 10 V, Ip=16 A Vpp = 400 V 2-34FAIRCHILD SEMICONDUCTOR &Y ve S4bB4b74 OOerGee 4 T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27822 D _ 2N6767/2N6768 T~39~13 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) i Symbo!} Characteristic | Min Typ | Max | Unit Test Conditions : Source-Drain Diode Characteristics f Ig Continuous Source Current A 2N6768 14 2N6767 12 ism Pulsed Source Current A : 2N6768 25? 2N6767 20? I Vsp Diode Forward Voltage v Vas =0 V 2N6768 0.85 1.7 Is=14 A : 2N6767 0.8 1.6 Igs=12 A : tr Reverse Recovery Time 10002 ns Vas = 0 V, Ty= 150C l-=Igu, dip/dt = 100 A/ps Qar Reverse Recovery Charge 252 uG Ves =0 V, Ty = 150C lp =Igy, dle/dt = 100 A/ps Notes i. Pulse test: Pulse width < 300 ps, Duty cycle < 2% 2. Non-JEDEC registered value. Typical Performance Curves Figure 2 Static Drain to Source On Resistance Figure 1 Output Characteristics vs Drain Current 0.7 = v Boog a = Bog < oa i zd, & 4 6.4 & Ba 3 22 os z aa = Be Log s g a O41 o 0 4 2 39 4 58 @ 7 9 4 5 12 16 20 Yos DRAIN TO SOURCE VOLTAGEV Ip ORAIN CURRENTA PCI0660F PG10670F 2-35FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR ie me, ay DEM) sucsu74 Ooa7a23 oO | - . 84D 27823 DY 2N6767/2N6768 T~39~-13 Typical Performance Curves (Cont, Figure 3 Transfer Characteristics 20 18 lp DRAIN CURRENTA Ss 0 1 2 a 4 5 6 7 VasGATE TO SOURCE VOLTAGEV PCLOESOF 103 3 CCAPACITANCE pF ~ 2 18 1 5 10 50 100 Yps DRAIN TO SOURCE VOLTAGEV PC10890F Figure 7 Forward Biased Safe Operating Area 02 5 2 tot 5 2 1 IpDRAIN CURRENTA Shic= Ty 150C SINGLE PULSE 2 oem CURRENT LIMITED 10-1 Ww 2 5 101 2 02 2 103 Vos~DRAIN TO SOURCE VOLTAGEV Potsace Figure 5 Capacitance vs Drain to Source Voltage tt i Figure 4 Temperature Variation of Gate to Source Threshold Voltage & 0.9 0.8 0.7 NORMALIZED GATE THRESHOLD VOLTAGE ~H G 50 100 150 T.JUNCTION TEMPERATUREC PCOS TE Figure 6 Gate to Source Voitage vs Total Gate Charge Voo = 400 . 12 ln =16A i Ty = 25C : VasGATE TO SOURCE VOLTAGEV 20 40 60 80 100 Qg TOTAL GATE CHARGEnC PCID700F Figure 8 Transient Thermal Resistance vs Time 10t 4 = 3 4 2. Zins-c--TRANSIENT THERMAL, RESISTANCECjw bet at ner Factor, D * apply to train heating pulses 10-2 aa 19-1 19 191 19? we 104 PCIO190F 2-36t- FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 2N6767/2N6768 &Y vel 34b9b74 OOe276e4 T 84D 27824 T-39-13 Typical Electrical Characteristics Figure 9 Switching Test Circuit PULSE GENERATOR Vout {| Figure 10 Switching Waveforms OUTPUT, Vout INVERTED INPUT, Vin 10% PULSE WIDTH 2-37