BSS138DWQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V(BR)DSS RDS(ON) Max ID Max TA = +25C 50V 3.5 @ VGS = 10V 200mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) The BSS138DWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data Load Switch Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number BSS138DWQ-7 BSS138DWQ-13 Notes: Case SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information YM YM 2005 S 2006 T Month Code Jan 1 Feb 2 BSS138DWQ Document number: DS38849 Rev. 2 - 2 K38 Date Code Key Year Code K38 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: D = 2016) M = Month (ex: 9 = September) YM YM K38 K38 ... ... Mar 3 2016 D Apr 4 2017 E May 5 2018 F Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 2021 I Oct O 2022 J Nov N 2023 K Dec D October 2019 (c) Diodes Incorporated BSS138DWQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 7) Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VDGR VGSS ID Continuous Continuous BSS138DW 50 50 20 200 Units V V V mA BSS138DW 200 625 -55 to +150 Units mW C/W C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 5. 6. 7. Symbol PD RJA TJ, TSTG Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 50 75 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) gFS 0.5 100 1.2 1.4 1.5 3.5 V mS VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS =25V, ID = 0.2A, f = 1.0KHz CISS COSS CRSS 50 25 8.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 20 20 ns ns VDD = 30V, ID = 0.2A, RGEN = 50 Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown at http://www.diodes.com/package-outlines.html. Short duration pulse test used to minimize self-heating effect. RGS 20K. BSS138DWQ Document number: DS38849 Rev. 2 - 2 2 of 6 www.diodes.com October 2019 (c) Diodes Incorporated BSS138DWQ 0.6 0.7 0.5 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 0.8 VGS = 3.5V T j = 25 C VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 150C 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4.5 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 2.25 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V ID = 0.075A 1.05 0.85 45 145 95 -5 Tj, JUNCTION TEMPERATURE (C) ( ) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS = 2.5V 150C 7 6 5 25C 4 3 -55C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current BSS138DWQ Document number: DS38849 Rev. 2 - 2 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 -25 (C)) Tj, JUNCTION TEMPERATURE ( Fig. 4 Gate Threshold Voltage vs. Junction Temperature R DS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 1.8 0 -55 0.65 -55 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 25C 0.5 2 2.45 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () -55 C 0.6 7 3 4 5 6 8 9 10 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 1 0 VDS = 1V 3 of 6 www.diodes.com 9 VGS = 2.75V 8 7 150C 6 5 4 25C 3 2 -55C 1 0 0.2 0.25 0.1 0.15 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0 0.05 October 2019 (c) Diodes Incorporated 3.5 6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () BSS138DWQ VGS = 4.5V 5 150C 4 3 25C 2 1 -55C 0 0 VGS = 10V 150C 3 2.5 2 25C 1.5 1 -55C 0.5 0 0 0.5 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On-Resistance vs. Drain-Current 0.5 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 100 1 C, CAPACITANCE (pF) ID, DIODE CURRENT (A) VGS = 0V f = 1MHz 150C 0.1 -55C 0.01 25C Ciss 10 Coss C rss 0.001 1 0.2 0.6 1 1.2 0.4 0.8 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 0 BSS138DWQ Document number: DS38849 Rev. 2 - 2 4 of 6 www.diodes.com 0 5 15 20 25 10 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage October 2019 (c) Diodes Incorporated BSS138DWQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0 8 - All Dimensions in mm b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions G Y1 Y C G X Y Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 X BSS138DWQ Document number: DS38849 Rev. 2 - 2 5 of 6 www.diodes.com October 2019 (c) Diodes Incorporated BSS138DWQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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