2SK2035
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2035
High Speed Switching Applications
Analog Switching Applications
• High input impedance.
• Low gate threshold voltage: Vth = 0.5~1.5 V
• Excellent switching times: ton = 0.16 µs (typ.)
t
off = 0.15 µs (typ.)
• Small package
• Enhancement-mode
Marking Equivalent Circuit
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS 20 V
Gate-source voltage VGSS 10 V
Drain current ID 100 mA
Drain power dissipation PD 100 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note: This transistor is electrostatic sensitive device. Please handle with caushon.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2H1B
Weight: 2.4 mg (typ.)
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2003-03-27
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Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = 10 V, VDS = 0 1 µA
Drain-source breakdown voltage V (BR) DSS I
D = 100 µA, VGS = 0 20 V
Drain cut-off current IDSS V
DS = 20 V, VGS = 0 1 µA
Gate threshold voltage Vth V
DS = 3 V, ID = 0.1 mA 0.5 1.5 V
Forward transfer admittance Yfs V
DS = 3 V, ID = 10 mA 25 50 mS
Drain-source ON resistance RDS (ON) I
D = 10 mA, VGS = 2.5 V 8 12 Ω
Input capacitance Ciss V
DS = 3 V, VGS = 0, f = 1 MHz 8.5 pF
Reverse transfer capacitance Crss V
DS = 3 V, VGS = 0, f = 1 MHz 3.3 pF
Output capacitance Coss V
DS = 3 V, VGS = 0, f = 1 MHz 9.3 pF
Turn-on time ton V
DD = 3 V, ID = 10 mA, VGS = 0~2.5 V 0.16
Switching time
Turn-off time toff V
DD = 3 V, ID = 10 mA, VGS = 0~2.5 V 0.15
µs
Switching Time Test Circuit
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2003-03-27
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2003-03-27
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2003-03-27
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000707EA
A
RESTRICTIONS ON PRODUCT USE
