©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
2N5638
TO-92
Absolute Maximum Ratings * TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V
VGS Gate-So urce Voltage -30 V
IGF Forward Gate Current 50 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = -10µA-30 V
IGSS Gate Reverse Current VGS = -15V, VDS = 0 -1.0 nA
ID(off) Drain Cutoff Leakage Current VDS = 12V, VGS = 15V 1.0 nA
On Characteristics
IDSS Zero-Gate Voltage Drain Current * VDS = 20V, IGS = 0 50 mA
rDS(on) Drain-Source On Resistance VGS = 0V, ID = 1.0mA 30 Ω
Small Signal Characteristics
rds(on) Drain-Source On Resistance VDS = VGS = 0, f = 1.0kHz 30 Ω
Ciss Input Capacitance VDS = 0, VGS = 12V, f = 1.0MHz 10 pF
Crss Reverse Transfer Capacitance VDS = 0V, VGS = 12V, f = 1.0MHz 4.0 pF
Switching Characteristics
td(on) Trun On Delay Time VDD = 10V, VGS(on) = 0
VGS(off) = -12, ID(on) = 12mA
RG = 50Ω
4.0 ns
trRise Time 5.0 ns
td(off) Trun Off Delay Tim e 5.0 ns
tfFall Time 10 ns
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
2N5638
N-Channel Switch
• This device is designed for low level analog switchng, sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 51.
1. Drain 2. Source 3. Gate
1
Package Dimensions
2N5638
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2002 Fairchild Semiconductor Corporation Rev. I1
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Advance Information Formative or In
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