IRFF120 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 6.0

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 3.5

IDM Pulsed Drain Current À24

PD @ TC = 25°C Max. Power Dissipation 20 W

Linear Derating Factor 0.16 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy Á0.242 mJ

IAR Avalanche Current À2.2 A

EAR Repetitive Avalanche Energy À2.0 mJ

dv/dt Peak Diode Recovery dv/dt Â5.5 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)

Weight 0.98 (typical) g

°C

09/03/07

www.irf.com 1

Features:

nRepetitive Avalanche Ratings

nDynamic dv/dt Rating

nHermetically Sealed

nSimple Drive Requirements

nEase of Paralleling

For footnotes refer to the last page

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET®TRANSISTORS

THRU-HOLE (TO-205AF)

Product Summary

Part Number BVDSS RDS(on) ID

IRFF120 100V 0.30Ω 6.0A

IRFF120

JANTX2N6788

JANTXV2N6788

REF:MIL-PRF-19500/555

100V, N-CHANNEL

T0-39

The HEXFET®technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this

latest “State of the Art” design achieves: very low on-

state resistance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of parelleling and

temperature stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

PD-90426D

IRFF120, JANTX2N6788, JANTXV2N6788

2www.irf.com

For footnotes refer to the last page

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 6.0

ISM Pulse Source Current (Body Diode) — — 24

VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS =6.0A, VGS = 0V Ã

trr Reverse Recovery Time — — 240 ns Tj = 25°C, IF = 6.0A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge — — 2.0 µC VDD ≤ 50V Ã

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.10 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.30 VGS = 10V, ID = 3.5A Ã

Resistance — — 0.35 VGS =10V, ID = 6.0A Ã

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 1.5 — — S VDS > 15V, IDS = 3.5A Ã

IDSS Zero Gate Voltage Drain Current — — 25 VDS= 80V, VGS=0V

— — 250 µA VDS = 80V

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge 7.7 — 18 VGS =10V, ID = 6.0A

Qgs Gate-to-Source Charge 0.7 — 4.0 nC VDS= 50V

Qgd Gate-to-Drain (‘Miller’) Charge 2.0 — 9.0

td(on) Turn-On Delay Time — — 40 VDD = 35V, ID = 6.0A,

trRise Time — — 70 VGS = 10V, RG = 7.5Ω

td(off) Turn-Off Delay Time — — 40

tfFall Time — — 70

LS + LDTotal Inductance — 7.0 —

Ciss Input Capacitance — 350 VGS = 0V, VDS = 25V

Coss Output Capacitance — 150 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 24 —

Ω

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 6.25

RthJA Junction-to-Ambient — — 175 Typical socket mount.

°C/W

www.irf.com 3

IRFF120, JANTX2N6788, JANTXV2N6788

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

60µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

60µs PULSE WIDTH

Tj = 150°C

4.5V

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4 5 6 7 8 9 10 11 12 13

VGS, Gate-to-Source Voltage (V)

100

ID, Drain-to-Source Current (A)

VDS = 50V

60µs PULSE WIDTH

TJ = 150°C

TJ = 25°C

IRFF120, JANTX2N6788, JANTXV2N6788

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

13 a & b

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD , Source-to-Drain Voltage (V)

0.1

1.0

100

ISD, Reverse Drain Current (A)

VGS = 0V

TJ = 150°C

TJ = 25°C

www.irf.com 5

IRFF120, JANTX2N6788, JANTXV2N6788

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

IRFF120, JANTX2N6788, JANTXV2N6788

6www.irf.com

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

www.irf.com 7

IRFF120, JANTX2N6788, JANTXV2N6788

Foot Notes:

ÂISD ≤ 6.0A, di/dt ≤ 110A/µs,

VDD≤ 100V, TJ ≤ 150°C

Suggested RG =7.5 Ω

ÃPulse width ≤ 300 µs; Duty Cycle ≤ 2%

ÀRepetitive Rating; Pulse width limited by

maximum junction temperature.

ÁVDD = 25V, starting TJ = 25°C,

Peak IL = 2.2A, L = 100µH

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 09/2007

Case Outline and Dimensions — TO-205AF(Modified TO-39)

LEGEND

1- SOURCE

2- GATE

3- DRAIN

LEGEND

1- SOURCE

2- GATE

3- DRAIN