DMG6968U
Document number: DS31738 Rev. 8 - 3
1 of 6
www.diodes.com
December 2018
© Diodes Incorporated
DMG6968U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
25m @ VGS = 4.5V
29m @ VGS = 2.5V
36m @ VGS = 1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
Ordering Information (Note 5)
Part Number
Compliance
Packaging
DMG6968U-7
Standard
3000/Tape & Reel
DMG6968UQ-7
Automotive
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2009
.
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
W
..
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Internal Schematic
Top View
D
GS
ESD PROTECTED TO 2kV
2N4 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: F = 2018)
M = Month (ex: 9 = September)
2N4
YM
e3
Y
D
S
G
Gate Protection
Diode
NOT RECOMMENDED FOR NEW DESIGN
USE DMN2024U
DMG6968U
Document number: DS31738 Rev. 8 - 3
2 of 6
www.diodes.com
December 2018
© Diodes Incorporated
DMG6968U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
ID
6.5
5.2
A
Pulsed Drain Current
IDM
30
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
1.3
W
Thermal Resistance, Junction to Ambient @ TA = +25°C
RθJA
157
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
20
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
1.0
µA
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
±10
µA
VGS = 10V, VDS = 0V
Gate-Source Breakdown Voltage
BVSGS
±12
V
VDS = 0V, IG = 250µA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.5
0.9
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
21
25
m
VGS = 4.5V, ID = 6.5A
23
29
VGS = 2.5V, ID = 5.5A
28
36
VGS = 1.8V, ID = 3.5A
Forward Transfer Admittance
|Yfs|
8
S
VDS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
151
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
91
pF
Reverse Transfer Capacitance
Crss
32
pF
Total Gate Charge
Qg
8.5
nC
VGS = 4.5V, VDS = 10V, ID = 6.5A
Gate-Source Charge
Qgs
1.6
nC
Gate-Drain Charge
Qgd
2.8
nC
Turn-On Delay Time
tD(ON)
54
ns
VDD = 10V, VGS = 4.5V,
RL = 10, RG = 6, ID = 1A
Turn-On Rise Time
tR
66
ns
Turn-Off Delay Time
tD(OFF)
613
ns
Turn-Off Fall Time
tF
205
ns
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
NOT RECOMMENDED FOR NEW DESIGN
USE DMN2024U
DMG6968U
Document number: DS31738 Rev. 8 - 3
3 of 6
www.diodes.com
December 2018
© Diodes Incorporated
DMG6968U
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
4
8
12
20
I , DRAIN CURRENT (A)
D
16
V = 1.5V
GS
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
)
A
0.6
0.8
1.0
1.2
1.4
1.6
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 6.5A
GS
D
V = 2.5V
I = 5.5A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
)
A
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
V = 4.5V
I = 6.5A
GS
D
V = 2.5V
I = 5.5A
GS
D
0
4
8
12
16
20
0.5
1
1.5
2
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
ID, DRAIN CURRENT (A)
0
0.01
0.02
0.03
0.04
0.05
0.06
0
4
8
12
16
20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
C)
C)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE ()
NOT RECOMMENDED FOR NEW DESIGN
USE DMN2024U
DMG6968U
Document number: DS31738 Rev. 8 - 3
4 of 6
www.diodes.com
December 2018
© Diodes Incorporated
DMG6968U
0
50
100
150
200
250
300
350
400
450
500
0 4 8 12 16 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
Ciss
Crss
Coss
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 162
/W
JA
JA
P(pk) t1t2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
I = 1mA
D
I = 250µA
D
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
T = 25°C
A
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
IS, SOURCE CURRENT (A)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
10
100
1,000
10,000
100,000
0
2
4
6
8
10
12
14
16
18
20
V , DRAIN-SOURCE VOLTAGE (V)
DS
I
,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
IDSS, LEAKAGE CURRENT (nA)
f = 1MHz
162°C/W
NOT RECOMMENDED FOR NEW DESIGN
USE DMN2024U
DMG6968U
Document number: DS31738 Rev. 8 - 3
5 of 6
www.diodes.com
December 2018
© Diodes Incorporated
DMG6968U
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
X
Y
Y1 C
X1
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
NOT RECOMMENDED FOR NEW DESIGN
USE DMN2024U
DMG6968U
Document number: DS31738 Rev. 8 - 3
6 of 6
www.diodes.com
December 2018
© Diodes Incorporated
DMG6968U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
www.diodes.com
NOT RECOMMENDED FOR NEW DESIGN
USE DMN2024U