NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance 25m @ VGS = 4.5V 29m @ VGS = 2.5V 36m @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish -- Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D D G Gate Protection Diode ESD PROTECTED TO 2kV Internal Schematic Top View S G S Top View Ordering Information (Note 5) Part Number Compliance Case Packaging DMG6968U-7 Standard Automotive SOT23 3000/Tape & Reel SOT23 3000/Tape & Reel DMG6968UQ-7 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year Code Month Code 2N4 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: F = 2018) M = Month (ex: 9 = September) YM 2N4 2009 W .... ..... 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMG6968U Document number: DS31738 Rev. 8 - 3 1 of 6 www.diodes.com December 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U DMG6968U Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 12 V ID 6.5 5.2 A IDM 30 A Symbol Value Unit PD 1.3 W RJA 157 C/W TJ, TSTG -55 to +150 C Steady State Continuous Drain Current (Note 6) TA = +25C TA = +70C Pulsed Drain Current Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @ TA = +25C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage TJ = +25C Symbol Min Typ Max Unit Test Condition BVDSS 20 V VGS = 0V, ID = 250A IDSS 1.0 A VDS = 20V, VGS = 0V IGSS 10 A VGS = 10V, VDS = 0V BVSGS 12 -- -- V VDS = 0V, IG = 250A VGS(TH) 0.5 V VDS = VGS, ID = 250A ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) 0.9 21 25 23 29 28 36 VGS = 4.5V, ID = 6.5A m VGS = 1.8V, ID = 3.5A |Yfs| 8 S Input Capacitance Ciss 151 pF Output Capacitance Coss 91 pF Reverse Transfer Capacitance Crss 32 pF Total Gate Charge Qg 8.5 nC Gate-Source Charge Qgs 1.6 nC Gate-Drain Charge Qgd 2.8 nC tD(ON) 54 ns Turn-On Rise Time tR 66 ns Turn-Off Delay Time tD(OFF) 613 ns tF 205 ns Forward Transfer Admittance VGS = 2.5V, ID = 5.5A VDS = 10V, ID = 5A DYNAMIC CHARACTERISTICS (Note 8) Turn-On Delay Time Turn-Off Fall Time Notes: VDS = 10V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10, RG = 6, ID = 1A 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG6968U Document number: DS31738 Rev. 8 - 3 2 of 6 www.diodes.com December 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U 20 20 VGS = 10V VDS = 5V VGS = 4.5V 16 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DMG6968U VGS = 3.0V )A ( T N E 12 R R U C N 8 IA R D ,D I 4 VGS = 2.5V VGS = 2.0V 12 VGS = 1.5V 8 4 TA = 150C T A = 125C TA = 85C TA = 25C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.04 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = 1.8V 0.03 0 0.5 VGS = 2.5V VGS = 4.5V 0.02 1 1.5 VGS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.06 VGS = 4.5V 0.05 0.04 TA = 150C TA = 125C 0.03 TA = 85C TA = 25C 0.02 TA = -55C 0.01 O (S D R 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.2 VGS = 2.5V ID = 5.5A 20 0.05 VGS = 4.5V ID = 6.5A 0.8 0.04 0.03 VGS = 2.5V ID = 5.5A VGS = 4.5V ID = 6.5A 0.02 0.01 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE ( (C)) Fig. 5 On-Resistance Variation with Temperature Document number: DS31738 Rev. 8 - 3 8 12 16 ID, DRAIN CURRENT (A) 0.06 1.0 DMG6968U 4 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R , DRAIN-SOURCE RDSON , DRAIN-SOURCE DS(ON) () ON-RESISTANCE( ON-RESISTANCE ) 1.4 0 0 30 1.6 RDSON, DRAIN-SOURCE ON-RESISTANCE RDS(ON), DRAIN-SOURCE (NORMALIZED) ON-RESISTANCE (NORMALIZED) TA = -55C 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE ( ( C)) Fig. 6 On-Resistance Variation with Temperature December 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U 1.4 T ( S G 20 1.2 16 )A ( T N E R 12 R U C E C R 8 U O S ,S I 4 1.0 ID = 250A 0.8 0.6 0.4 TA = 25C IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) )V ( E G A T L O V D L O H S E R H T E T A G , )H DMG6968U ID = 1mA 0.2 V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0 500 0.2 0.4 0.6 0.8 1 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100,000 450 f = 1MHz C, CAPACITANCE (pF) 350 300 250 200 Ciss 150 100 I Coss IDSS, LEAKAGE CURRENT (nA) )A 10,000 n ( T N E R R 1,000 U C E G A K 100 A E L ,S 400 S D TA = 150C TA = 125C TA = 85C 10 TA = -55C 50 0 Crss 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance TA = 25C 1 20 0 2 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 162 /W 162C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.000001 0.00001 DMG6968U Document number: DS31738 Rev. 8 - 3 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 December 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U DMG6968U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMG6968U Document number: DS31738 Rev. 8 - 3 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com December 2018 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN2024U DMG6968U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2018, Diodes Incorporated www.diodes.com DMG6968U Document number: DS31738 Rev. 8 - 3 6 of 6 www.diodes.com December 2018 (c) Diodes Incorporated