VISHAY 40A Schottky Barrier Rectifier MBR4030PTMBR4060PT Features Schottky barrier chip Guard ring die constuction for transient protection Low power loss, high efficiency High current capability and low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection application Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings Vishay Lite-On Power Semiconductor Tj = 25C Repetitive peak reverse voltage MBR4030PT | Varn 30 Vv =Working peak reverse voltage MBR4035PT | =Vrawa 35 Vv =DC Blocking voltage MBR4040PT =VR AO V MBR4045PT 45 Vv MBR4050PT 50 Vv MBR4060PT 60 Vv Peak forward surge current lesm 400 A Average forward current Te=125C lFay 40 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage MBR4030PT Vv I-=20A, Tc=125C MBR4045PT Ve 0.6 V Ip=20A, Tc=25C MBR4050PT Ve 0.8 Vv I-=20A, Tc=125C MBR4060PT Ve 0.7 V Reverse current Tce=25C IR 1.0 mA Te=125C IR 100 mA Diode capacitance VR=4V, f=1MHz Cp 1100 pF Thermal resistance TL=const. Rthuc 1.4 KW junction to case Voltage rate of change dV/dt 10000 | V/us ( Rated Vp ) Rev. A2, 24-Jun-98MBR4030PTMBR4060PT ar Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) _ 50 4000 < _ = LL o 40 = 5 o 5 \ g 2 30 h 1000 s \ & oO wo ic Oo 20 \ 3 g \ I 10 oO > 2 \ 0 100 0 50 100 150 0.1 1 10 100 15388 Tamb Ambient Temperature ( C ) 15391 Va Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 1 MBR4030PT-MBR4045PT ~ => < < E ~ ~ dL o 10 e TC a a o Tj= 75C = MBR4050PT-MBR4060PT o 10 id I |. 0.0 = + T= 25C 0.1 0.00 02 03 04 05 06 07 08 09 0 20 40 60 80 100 120 140 15389 Ve Forward Voltage ( V ) 15392 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage - 400 TTTTTT T TTTTTT x 8.3 ms Single Half-Sine-Wave JEDEC method 2 N 5 Oo \ S, 300 NY a N QZ 5 N = i 200 x 8 AN ao Is tp - 100 1 10 100 15390 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98MBR4030PTMBR4060PT VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm B _H A J ane ! Oo 4 & G technical drawings a according to DIN specifications 14470 Case: molded plastic Polarity: as marked on body Approx. weight: 5.6 grams Mounting position: any Marking: type number TO-3P Dim Min Max A 3.20 3.50 B L59 5.16 C 20.80 21.30 D 19.70 20.20 E 2.10 2.40 O 0.51 0./6 H 15.90 16.40 J 1.70 2.10 K 63.10 03,30 L 3.50 45] M 5.20 5.10 N 4.42 1.22 P 2.90 3.30 R 11.70 12.80 5 4.30 Typical ALL Dimensions in mm Rev. A2, 24-Jun-98MBR4030PTMBR4060PT Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98