Order this document by 2N5684/D SEMICONDUCTOR TECHNICAL DATA "! !$ # ! . . . designed for use in high-power amplifier and switching circuit applications. * High Current Capability -- IC Continuous = 50 Amperes. * DC Current Gain -- hFE = 15 - 60 @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII *Motorola Preferred Device 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS 300 WATTS MAXIMUM RATINGS (1) Rating Symbol 2N5685 2N5684 2N5686 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous IC 50 Adc Base Current IB 15 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 300 1.715 Watts W/_C TJ, Tstg - 65 to + 200 _C Operating and Storage Junction Temperature Range CASE 197A-05 TO-204AE THERMAL CHARACTERISTICS (1) Characteristic Symbol Max Unit JC 0.584 _C/W Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 TEMPERATURE (C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 80 -- -- Vdc -- -- 1.0 1.0 -- -- -- -- 2.0 2.0 10 10 -- -- 2.0 2.0 -- 5.0 15 5.0 60 -- -- -- 1.0 5.0 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 0.2 Adc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N5685 2N5684, 2N5686 ICEO 2N5685 2N5684, 2N5686 Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5685 2N5684, 2N5686 mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) (IC = 50 Adc, VCE = 5.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 10 Adc) VCE(sat) Base-Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) VBE(on) -- 2.0 Vdc -- 2.0 Vdc fT Cob 2.0 -- MHz -- -- 2000 1200 pF hfe 15 -- Base-Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance 2N5684 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5685, 2N5686 Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) * Indicates JEDEC Registered Data. Note 1: Pulse Test: Pulse Width 300 s, Duty Cycle VCC 2.0%. - 30 V RL + 2.0 V TO SCOPE tr 20 ns 0 RB tr 20 ns 1.0 0.7 0.5 -12 V 0.3 DUTY CYCLE 2.0% VCC RL +10 V TO SCOPE tr 20 ns 0 RB tr 20 ns 10 to 100 s - 30 V VBB t, TIME ( s) 10 to 100 s -12 V tr 0.2 td 0.1 0.07 0.05 0.03 0.02 + 4.0 V DUTY CYCLE 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. 2N5684 (PNP) 2N5685, 2N5686 (NPN) TJ = 25C IC/IB = 10 VCC = 30 V 0.01 0.5 0.7 1.0 20 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 30 Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit 2 Motorola Bipolar Power Transistor Device Data 50 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 P(pk) JC(t) = r(t) JC JC = 0.584C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 100 20 dc 10 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 5.0 2.0 1.0 0.5 v 2N5683, 2N5685 0.2 0.1 1.0 100 s 500 s 50 2N5684, 2N5686 2.0 3.0 20 30 50 70 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active-Region Safe Operating Area 5000 4.0 t, TIME ( s) 2.0 ts TJ = 25C TJ = 25C IB1 = IB2 IC/IB = 10 VCE = 30 V 3000 C, CAPACITANCE (pF) 2N5684 (PNP) 2N5685, 2N5686 (NPN) 3.0 1.0 0.8 0.6 0.4 Cib Cob Cib 1000 tf 700 0.3 0.2 0.5 0.7 1.0 2000 5.0 7.0 10 2.0 3.0 20 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 30 50 500 0.1 2N5684 (PNP) 2N5685, 2N5686 (NPN) 0.2 Cob 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 7. Capacitance 3 PNP 2N5684 NPN 2N5685, 2N5686 500 500 TJ = +150C + 25C 100 70 - 55C 50 30 20 10 7.0 5.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 + 25C 100 70 50 - 55C 30 20 10 7.0 5.0 0.5 0.7 1.0 50 VCE = 2.0 V VCE = 10 V TJ = +150C 300 200 VCE = 2.0 V VCE = 10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 300 200 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 2.0 TJ = 25C 1.6 IC = 10 A 40 A 25 A 1.2 0.8 0.4 0 0.1 0.2 1.0 2.0 3.0 0.5 IB, BASE CURRENT (AMP) 5.0 10 2.0 TJ = 25C 1.6 IC = 10 A 25 A 40 A 1.2 0.8 0.4 0 0.1 0.2 0.3 1.0 2.0 3.0 0.5 IB, BASE CURRENT (AMP) 5.0 10 20 30 50 Figure 9. Collector Saturation Region 2.5 2.0 TJ = 25C TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 1.5 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.5 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0 0.5 0.7 IC, COLLECTOR CURRENT (AMP) 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N C -T- E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M -Y- L 2 H G B M T Y 1 -Q- 0.25 (0.010) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE ISSUE J Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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