GBPC25005/W-GBPC2510/W Vishay Lite-On Power Semiconductor 25A Glass Passivated Bridge Rectifier Features D D D D D D Glass passivated die construction Diffused junction Low reverse leakage current Low power loss, high efficiency Surge overload rating to 300A peak GBPC Electrically isolated metal base for maximum heat dissipation D Case to terminal isolation voltage 2500V D UL listed under recognized component index , GBPC - W file number E95060 14 452 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage g =Working peak reverse voltage DC Bl ki voltage lt =DC Blocking Type Symbol Value Unit GBPC25005/W GBPC2501/W GBPC2502/W GBPC2504/W GBPC2506/W GBPC2508/W GBPC2510/W VRRM =VRWM VR =V 50 100 200 400 600 800 1000 300 25 -65...+150 V V V V V V V A A C Typ Unit V mA mA A2s pF K/W Peak forward surge current Average forward current TC=60C Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Diode capacitance Thermal resistance junction to case Rev. A2, 24-Jun-98 Test Conditions IF=12.5A TC=25C TC=125C VR=4V, f=1MHz mounted on heatsink Type Symbol VF IR IR I2t CD RthJC Min 300 3.6 Max 1.1 5 500 374 1 (4) GBPC25005/W-GBPC2510/W Vishay Lite-On Power Semiconductor 40 Mounted on a 220 x 220 x 50 mm AL plate heatsink 30 20 10 1000 C D - Diode Capacitance ( pF ) IFAV - Average Forward Current ( A ) Characteristics (Tj = 25_C unless otherwise specified) 10 0 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) 15675 Figure 1. Max. Average Forward Current vs. Ambient Temperature 0.1 15678 100 IR - Reverse Current ( m A ) IF - Forward Current ( A ) 10 1.0 0.1 0.01 Tj = 25C IF Pulse Width = 300 s 0 VF - Forward Voltage ( V ) 15679 Figure 2. Typ. Forward Current vs. Forward Voltage 400 10 Tj = 125C Tj = 130C 50V - 400V 600V - 1000V 1.0 Tj = 25C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 15676 1.0 10 100 VR - Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 IFSM - Peak Forward Surge Current ( A ) 100 Resistive or inductive load 0 20 40 60 80 100 120 140 0 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Single Half Sine-Wave (JEDEC Method) 300 200 100 0 Tj = 150C 1 15677 Tj = 25C f = 1 MHz 10 Number of Cycles at 60 Hz 100 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 GBPC25005/W-GBPC2510/W Vishay Lite-On Power Semiconductor Dimensions in mm 14477 Case: molded plastic with heatsink internally mounted in the bridge encapsulation Polarity: as marked on case Approx. weight: GBPC 18 grams, GBPC-W 14.5 grams Mounting: through hole for #10 screw Mounting torque: 8.0 Inch-pounds maximum Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) GBPC25005/W-GBPC2510/W Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98