FEATURES
Fast recov ery times
Ul 90V0 f lame ret arda nt epoxy molding compound
Diffused junction
Low c ost
H igh sur ge c ur r en t c apa bility
MECHANICAL DATA
Case: JE D EC DO-- 27, molded plast ic
T er minals: Axial lead , solderable per
M IL- STD-202,M ethod 208
Polarity : Color band denotes cathode
Weight : 0. 041 ounc es,1 .15 grams
Mounting position: A ny
Ratings at 25 ambient t emperat ur e unless ot herw ise specif ied.
S ingle phase,ha lf wave, 60 Hz, resist ive or induc tive load. F or c apac it ive load, der at e by 20%.
BYT
56B BYT
56D BYT
56G BYT
56J BYT
56K BYT
56M UNITS
Maximum recurrent peak reverse voltage VRRM 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 100 200 400 600 800 1000 V
Maximum average forward rectified current
9.5 mm l e a d l e n g th , @ TA=75
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @ TJ=125
Maximum instantaneous forward voltage
@ 3 .0 A VFV
Ma ximum reverse current @TA=25
at rated D C blocking voltage @TA=100
Maximum reverse recovery time (Note1) trr ns
Typical junction capacitance (Note2) CJpF
Typi cal th e rmal resi stance (Note 3 ) RθJA /W
O perating junction temperature range TJ
Storage temperature range TSTG
BYT56A(Z)--- BYT56M(Z)
A
B evel round ch ip, aualanch e operat ion
IF(AV)
HIG H EFFICIENCY ECTIFIER S VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3 .0 A
DO - 27
MAXIMU M RATINGS AND ELECTRICAL CHARACTERISTICS
GALAXY ELECTRICAL
3. Ther m al resistance fr om junction to am bient.
A
IR
IFSM
N OTE: 1. Meas ur ed wi th IF=0.5A, IR=1A , Irr=0.25A.
2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
A
- 55 ---- + 150
- 55 ---- + 150
100
150.0
50
BYT
56A
35
50
3.0
1.4
30
150.0
10.0
75 50
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Document Number 0262025 1.