DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC converters and motor drivers. FEATURES * High current capacitance * Low collector saturation voltage * Complementary transistor with 2SB1571 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 6.0 V Collector current (DC) IC(DC) 5.0 A Collector current (pulse) IC(pulse) 8.0 A Base current (DC) IB(DC) 0.2 A Base current (pulse) IB(pulse) PW 10 ms duty cycle 50 % 0.4 A 16 cm2 x 0.7 mm ceramic board mounted 2.0 W PW 10 ms duty cycle 50 % Total power dissipation PT Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16155EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan (c) 2002 1998 2SD2402 ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Symbol Conditions TYP. MAX. Unit Collector cutoff current ICBO VCB = 50 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 100 nA DC current gain hFE1 VCE = 1.0 V, IC = 1.0 A 80 DC current gain hFE2 VCE = 1.0 V, IC = 2.0 A 100 200 400 - DC base voltage VBE VCE = 1.0 V, IC = 0.1 A 600 650 700 mV Collector saturation voltage VCE(sat)1 IC = 3.0 V, IB = 0.15 A 140 300 mV Collector saturation voltage VCE(sat)2 IC = 5.0 V, IB = 0.25 A 230 500 mV Base saturation voltage VBE(sat) IC = 3.0 V, IB = 0.15 A 0.88 1.2 V Gain bandwidth product fT VCE = 10 V, IE = -0.5 A 170 MHz - Output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 60 pF Turn-on time ton 275 ns Storage time tstg IC = 2.0 A, VCC= 10 V IB1 = -IB2 = 0.1 A RL = 500 485 ns 45 ns Fall time tf hFE CLASSIFICATION 2 MIN. Marking EX EY EZ hFE2 100 to 200 160 to 320 200 to 400 Data Sheet D16155EJ2V0DS 2SD2402 TYPICAL CHARACTERISTICS (Ta = 25C) Data Sheet D16155EJ2V0DS 3 2SD2402 4 Data Sheet D16155EJ2V0DS 2SD2402 [MEMO] Data Sheet D16155EJ2V0DS 5 2SD2402 * The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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