SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION . High Breakdown Voltage - Complementary to GT20D201 Enhancement-Mode MAXIMUM RATINGS (Ta=25C) : Verg=250V (MIN.) - High Forward Transfer Admittance : | Yfe | =10S (TYP.) Unit in mm 3.30.2 26.0+0.5 45+015 20.0406 .454+0.15 CHARACTERISTIC SYMBOL RATING UNIT we x an Collector-Emitter Voltage VCES 250 Vv +r 2 a a nN wo Gate-Emitter Voltage VGE 20 Vv PLE 7} ES fo + Collector Current Ic 20 A ' 1. GATE Latch Up Current hh 60 A 2. COLLECTOR (HEAT SINK) cores cy Dissipation Pc 180 W 3. EMITTER JEDEC _ Junction Temperature Tj 150 C EIAJ _ Storage Temperature Range Tstg -55~150 c TOSHIBA 2-21F1c Weight 9.752 ELECTRICAL CHARACTERISTICS (Ta=25c) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT Collector Cut-off Current ICES VcE=250V, VGE=0 - - 50 uA Gate Leakage Current IGES VGE=t20V, Vcg=0 - - +10 uA Collector-Emitter _ r _ . Breakdown Voltage V(BR)CES Tc=100uA, VoE=0 250 v Collector-Emitter _ _ Saturation Voltage Vce{sat)| Icn15A, VcE=10v 1.5] 3.0 V Gate-Emitter Cut-off Voltage - (Note) VcE(oFF)| Vce=10V, Ic=100mA 1.0 3.6 v Y Vcp=10V, Ic=lA - 3 - Forward Transfer Admittance | fe | cE S lYee| | Vcg=l0V, Ic=10a - 10 - Input Capacitance Cies Vcp=1l0V, VoE=0, f=1MHz - 1400 - pF Output Capacitance Coes Vce=lOV, VcE=0, f=1MHz - 400 - pF Reverse Transfer Capacitance Cres Vcg=lOV, VGE=0, f=1MHz - 65 - pF (Note) VGE(OFF) Classification 0: 1.0+2.4 Y 2.2~3.6 1190Ie (A) COLLECTOR CURRENT Cs) FOWARD TRANSFER ADMITTANCE CAPACITANCE C (pF) lrel 0.1 0.03 3000 1000 500 300 100 50 30 Ic Vee COMMON EMITTER Te = 25 3.5 VoE= 30 4 8 12 16 20 24 COLLECTOR-EMITTER VOLTAGE Vcp (V) 'Ye| Ie COMMON EMITTER Vop= 10V 01 0.3 1 3 10 30 50 COLLECTOR CURRENT I (A) C VcE Cies COMMON EMITTER VoE=0 f= 1MHz Te =25 C 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE Yceg (V) 1191 Ic (A) COLLECTOR CURRENT VCE( sat) (v) COLLECTOR-FMITTER SATURATION VOLTAGE (Ww) COLLECTOR POWER DISSIPATION Pc GT20D101 Ic Var COMMON EMITTER Vog= 10V 0 2 4 6 8 10 12 GATE-EMITTER VOLTAGE Vgp (V) 20 VCE(sat) ~ Te COMMON EMITTER VoE= 10V Ig = 20A 1s 1.0 10 0.5 -50 0 1 CASE TEMPERATURE Te (C) Pc Te 250 200 8 100 -50 0 50 100 150 200 CASE TEMPERATURE Te (C)GT20D101 Te (AD COLLECTOR CURRENT SAFE OPERATING AREA Ty MAX. Ic MAX.(PULSED) Ic MAX. (CONT INUOUS * SINGLE NONREPETITIVE PULSE Te=25%C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE Veg (V) 1192