Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -2.6
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -1.6
IDM Pulsed Drain Current ➀ -10.4
PD @ TC = 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁30 mJ
IAR Avalanche Current ➀-2.6 A
EAR Repetitive Avalanche Energy ➀1.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂6.6 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 0.98 (Typical) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been character ized fo r
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
oC
A
RADIATION HARDENED
IRHF597110
POWER MOSFET
THRU-HOLE (TO-39)
12/03/03
www.irf.com 1
100V, P-CHANNEL
c
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF597110 100K Rads (Si) 1.0Ω-2.6A
IRHF593110 300K Rads (Si) 1.0Ω-2.6A
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nNeutron Tolerant
nIdentical Pre- and Post-Electrical Test Conditions
nRepetitive Avalanche Ratings
n Dynamic dv/dt Ratings
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
For footnotes refer to the last page
44
#
TO-39
PD - 94176C
IRHF597110 Pre-Irradiation
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 8.3
RthJA Junction-to-Ambient — — 175 Typical socket mount
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -2.6
ISM Pulse Source Current (Body Diode) ➀— — -10.4
VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -2.6A, VGS = 0V ➃
trr Reverse Recovery Time — — 100 ns Tj = 25°C, IF = -2.6A, di/dt ≤−100A/µs
QRR Reverse Recovery Charge — — 250 nC VDD ≤ -25V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tur n-on speed is substantially controlled by LS + L D.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.13 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 1.2 ΩVGS = -12V, ID = -2.6A
Resistance — — 1.0 VGS = -12V, ID = -1.6A
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 1.3 — — S ( )V
DS > -15V, IDS = -1.6A ➃
IDSS Zero Gate Voltage Drain Current — — -10 VDS= -80V ,VGS=0V
— — -25 VDS = -80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 11 VGS =-12V, ID = -2.6A
Qgs Gate-to-Source Charge — — 3.0 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 4.0
td(on) Turn-On Delay Time — — 20 VDD = -50V, ID = -2.6A
trRise Time — — 20 VGS =-12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 30
tfFall Time — — 95
LS + LDTotal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance — 370 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 100 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 7.0 —
nA
Ω
➃
nH
ns
µA
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Pre-Irradiation IRHF597110
T able 1. Electrical Characteristics @ Tj = 25°C, P ost Total Dose Irradiation ➄➅
Parameter 100K Rads(Si)1 300K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS = -20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V
IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS= -80V, VGS =0V
RDS(on) Static Drain-to-Source ➃ — 0.916 — 0.916 Ω VGS = -12V, ID =-1.6A
On-State Resistance (TO-39)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHF597110
2. Part number IRHF593110
VSD Diode Forward Voltage ➃ — -5.0 — -5.0 V VGS = 0V, IS = -2.6A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a. Single Event Effect, Safe Operating Area
T able 2. Single Event Effect Safe Operating Area
I on LET Energy Range VDS (V)
MeV/(mg/cm2) (MeV) (µm) @VGS=0V @VGS=5V @ VGS=10V @VGS=15V @VGS=20V
C u 28.0 285 43.0 -100 -100 -100 -70 -60
Br 36.8 305 39.0 -100 -100 -70 - 50 -40
I 59.8 343 32.6 -60 — — — —
-120
-100
-80
-60
-40
-20
00 5 10 15 20
VGS
VDS
Cu
Br
I
IRHF597110 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1
1
10
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
0.1
1
10
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-12V
-2.6A
1
10
100
5 6 7 8 9 10 11
V = -50V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
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Pre-Irradiation IRHF597110
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
100
200
300
400
500
600
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Crss
Coss
Ciss
0 2 4 6 8 10 12
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-2.6A
V =-20V
DS
V =-50V
DS
V =-80V
DS
0.1
1
10
100
0.0 1.0 2.0 3.0 4.0 5.0
-V ,Source-to-Drain Volta
g
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100 1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
IRHF597110 Pre-Irradiation
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VGS
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Dut
y
factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(
THERMAL RESPONSE
)
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
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Pre-Irradiation IRHF597110
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
-12V
Fig 13b. Gate Charge Test Circuit
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
VGS
25 50 75 100 125 150
0
10
20
30
40
50
60
Startin
g
T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.2A
-1.6A
-2.6A
IRHF597110 Pre-Irradiation
8www.irf.com
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD =-25V, star ting TJ = 25°C, L= 8.9 mH
Peak IL = -2.6A, VGS = -12V
➂ ISD ≤ -2.6A, di/dt ≤ -120A/ µs,
VDD ≤ -100V, TJ ≤ 150°C
Case Outline and Dimensions — TO-205AF (Modified T O-39)
Footnotes:
LEGEND
1- SOURCE
2- GA TE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/03
