IXTN210P10T - LITTELFUSE - Datasheet.Cloud

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C -100 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ-100 V

VGSS Continuous ±15 V

VGSM Transient ±25 V

ID25 TC= 25°C (Chip Capability) - 210 A

ILRMS Lead Current Limit, RMS - 200 A

IDM TC= 25°C, Pulse Width Limited by TJM - 800 A

IATC= 25°C -100 A

EAS TC= 25°C3J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 830 W

TJ- 55 ... +150 °C

TJM 150 °C

Tstg - 55 ... +150 °C

VISOL 50/60 Hz, RMS, t = 1minute 2500 V~

IISOL ≤ 1mA, t = 1s 3000 V~

MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

DS100408A(01/13)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA -100 V

VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V

IGSS VGS = ±15V, VDS = 0V ±200 nA

IDSS VDS = VDSS, VGS = 0V - 25 μA

TJ = 125°C - 300 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 7.5 mΩ

TrenchPTM

Power MOSFET

IXTN210P10T VDSS = -100V

ID25 = - 210A

RDS(on) ≤≤

≤≤

≤ 7.5mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 200ns

P-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier miniBLOC

E153432

G

D

S

G = Gate D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

Features

zInternational Standard Package

zLow Intrinsic Gate Resistance

zminiBLOC with Aluminum Nitride

Isolation

z Avalanche Rated

zExtended FBSOA

zFast Intrinsic Recitifier

z Low RDS(ON) and QG

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switching

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

zBattery Charger Applications

Preliminary Technical Information

S

D

G

IXTN210P10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = - 60A, Note 1 90 150 S

Ciss 69.5 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 4070 pF

Crss 1100 pF

td(on) 90 ns

tr 98 ns

td(off) 165 ns

tf 55 ns

Qg(on) 740 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 200 nC

Qgd 155 nC

RthJC 0.15 °C/W

RthCS 0.05 °C/W

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V - 210 A

ISM Repetitive, Pulse Width Limited by TJM - 840 A

VSD IF = -100A, VGS = 0V, Note 1 -1.4 V

trr 200 ns

QRM 930 nC

IRM -12.4 A

IF = -105A, -di/dt = -100A/μs

VR = -100V, VGS = 0V

(M4 screws (4x) supplied)

SOT-227B (IXTN) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXTN210P10T

Fi g . 1. Output Ch ar ac ter i sti cs @ T

J

= 25ºC

-220

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 8V

- 7V

- 4

V

- 5

V

- 6

V

Fi g . 2. Extended Outp u t C h ar ac ter i sti cs @ T

J

= 25ºC

-400

-350

-300

-250

-200

-150

-100

-50

0

-10-9-8-7-6-5-4-3-2-10

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 5

V

- 6

V

- 7

V

- 4

V

Fi g . 3. Output Ch ar ac ter i sti cs @ T

J

= 125º C

-220

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-2.4-2-1.6-1.2-0.8-0.40

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 8V

- 7V

- 4V

- 6V

- 5

V

Fig. 4. R

DS(on)

Normalized to I

D

= -105A Valu e vs.

Junction T emperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 210A

I

D

= -105A

Fig. 5. R

DS(on)

Normalized to I

D

= -105A Valu e vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-350-300-250-200-150-100-500

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 6. Maximum D r ai n C urr en t vs.

Case Temper atu r e

-220

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXTN210P10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 12. Forward-Bias Safe Operating Area

1

10

100

1000

1 10 100

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

--

-

100ms

External Lead Current Limit

Fi g . 7. I n p u t Admi ttan ce

-300

-250

-200

-150

-100

-50

0

-6-5.5-5-4.5-4-3.5-3

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

50

100

150

200

250

300

-300-250-200-150-100-500

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-350

-300

-250

-200

-150

-100

-50

0

-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0 100 200 300 400 500 600 700

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= - 50V

I

D

= -105A

I

G

= -1mA

Fig. 11. Capacitance

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MH

z

Ciss

Crss

Coss

IXTN210P10T

Fig . 14. Resistive Tu rn - o n R ise Ti me vs.

Drain Current

80

90

100

110

120

-100-95-90-85-80-75-70-65-60-55-50

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

T

J

= 25ºC

T

J

= 125ºC

Fi g. 16. R esi stive Turn -off Switch i ng Times vs.

Jun ct i o n Temp er at u r e

40

45

50

55

60

65

70

75

80

85

90

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

120

140

160

180

200

220

240

260

280

300

320

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

I

D

= -100A

I

D

= - 50A

Fig. 17. Resistive Turn-off Switching Times vs.

Drain Current

100

140

180

220

260

300

-100-95-90-85-80-75-70-65-60-55-50

I

D

- Amperes

t

f

- Nanoseconds

40

50

60

70

80

90

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 13 . R esi s ti ve Turn -on R i se Time vs.

Junct i on Temp eratur e

70

80

90

100

110

120

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 1Ω, V

GS

= -10V

V

DS

= - 50V

I

D

= - 50A

I

D

= -100A

Fi g . 18. R esisti ve Tur n -o ff Swi tchi n g Times vs.

Gate Resistance

0

100

200

300

400

500

12345678910

R

G

- Ohms

t

f

- Nanoseconds

0

200

400

600

800

1000

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 50V

I

D

= - 50A

I

D

= -100A

Fig . 15. R esisti ve Tu r n -on Switch in g Times vs.

Gate R esi st an ce

0

50

100

150

200

250

300

350

12345678910

R

G

- Ohms

t

f

- Nanoseconds

0

100

200

300

400

500

600

700

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= -10V

V

DS

= - 50V

I

D

= - 50A

I

D

= -100A

IXTN210P10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_210P10T(A9)10-26-11

Fi g . 19 . Maximum Tr an si e n t Th er mal I mped ance

0.0001

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.