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Page <1> V1.025/02/13
Surface Mount
Switching Diode
Features:
• For High-Speed Switching Applications
• Common Anode
Applications:
High speed switching application
Max. Rating @ T
= 25°C unless otherwise specied
Parameter Symbol Limits Unit
Non-repetitive peak reverse voltage V
100 V
Peak repetitive reverse voltage
Working peak reverse voltage
DC reverse voltage
75 V
Forward continuous current I
300 mA
Non-repetitive forward surge current
@t = 1ms
@t = 1s
2
1
A
Power dissipation P
350 mW
Thermal resistance junction to ambient air RθJA 357 °C/W
Operating junction temperature range Tj150 °C
Storage temperature range T
-65 to +150 °C
Electrical Characteristics @ T
= 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage
I
= 2.5μA 75 - V
Forward voltage
I
= 1mA
I
= 10mA
I
= 50mA
I
= 150mA
-
715
855
1,000
1,250
V
Reverse leakage current I
V
= 75V
V
= 20V -2.5
25
μA
nA
Diode capacitance
Vr =0V, f=1MHz - 2 pF
Reverse recovery time trr I
= I
10mA,
Irr = 0.1 × I
R
= 100Ω - 4 ns