© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 6
1Publication Order Number:
MPF4392/D
MPF4392, MPF4393
JFET Switching Transistors
N−Channel − Depletion
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 30 Vdc
Drain−Gate Voltag VDG 30 Vdc
Gate−Source Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD350
2.8
mW
mW/°C
Operating and Storage Channel
Temperature Range
Tchannel,
Tstg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
Device Package Shipping†
ORDERING INFORMATION
MPF4392 TO−92 1000 Units / Bulk
MPF4392G TO−92
(Pb−Free)
1000 Units / Bulk
MPF4393 TO−92 1000 Units / Bulk
MPF4393G TO−92
(Pb−Free)
1000 Units / Bulk
MPF4393RLRP TO−92 1000 / Ammo Box
MPF4393RLRPG TO−92
(Pb−Free)
1000 / Ammo Box
TO−92 (TO−226AA)
CASE 29−11
STYLE 5
MARKING DIAGRAM
MPF439x = Device Code
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
MPF
439x
AYWW G
G
(Note: Microdot may be in either location)
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
MPF4392, MPF4393
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
V(BR)GSS 30 − − Vdc
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
IGSS −
−
−
−
1.0
0.2
nAdc
mAdc
Drain−Cutoff Current
(VDS = 15 Vdc, VGS = −12 Vdc)
(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)
ID(off) −
−
−
−
1.0
1.0
nAdc
mAdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 10 nAdc) MPF4392
MPF4393
VGS −2.0
−0.5
−
−
−5.0
−3.0
Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1)
(VDS = 15 Vdc, VGS = 0) MPF4392
MPF4393
IDSS 25
5.0
−
−
75
30
mAdc
Drain−Source On−Voltage
(ID = 6.0 mAdc, VGS = 0) MPF4392
(ID = 3.0 mAdc, VGS = 0) MPF4393
VDS(on) −
−
−
−
0.4
0.4
Vdc
Static Drain−Source On Resistance
(ID = 1.0 mAdc, VGS = 0) MPF4392
MPF4393
rDS(on) −
−
−
−
60
100
W
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) MPF4392
(VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) MPF4393
|yfs|
−
−
17
12
−
−
mmhos
Drain−Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz) MPF4392
MPF4393
rds(on) −
−
−
−
60
100
W
Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Ciss −6.0 10 pF
Reverse Transfer Capacitance
(VGS = 12 Vdc, VDS = 0, f = 1.0 MHz)
(VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz)
Crss −
−
2.5
3.2
3.5
−
pF
SWITCHING CHARACTERISTICS
Rise Time (See Figure 2)
(ID(on) = 6.0 mAdc) MPF4392
(ID(on) = 3.0 mAdc) MPF4393
tr−
−
2.0
2.5
5.0
5.0
ns
Fall Time (See Figure 4)
(VGS(off) = 7.0 Vdc) MPF4392
(VGS(off) = 5.0 Vdc) MPF4393
tf−
−
15
29
20
35
ns
Turn−On Time (See Figures 1 and 2)
(ID(on) = 6.0 mAdc) MPF4392
(ID(on) = 3.0 mAdc) MPF4393
ton −
−
4.0
6.5
15
15
ns
Turn−Off Time (See Figures 3 and 4)
(VGS(off) = 7.0 Vdc) MPF4392
(VGS(off) = 5.0 Vdc) MPF4393
toff −
−
20
37
35
55
ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
MPF4392, MPF4393
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3
Figure 1. Turn−On Delay Time Figure 2. Rise Time
Figure 3. Turn−Off Delay Time Figure 4. Fall Time
TYPICAL SWITCHING CHARACTERISTICS
ID, DRAIN CURRENT (mA)
, TURN-ON DELAY TIME (ns)
d(on)
t
5.0
2.0
20
10
0.5 1.0 3.0 7.0
5.0
1.0
50
100
0.7 2.0 10 20
, RISE TIME (ns)
r
t
, TURN-OFF DELAY TIME (ns)
d(off)
t
, FALL TIME (ns)
f
t
30 50
200
500
1000
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.0
5.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
TJ = 25°CTJ = 25°C
TJ = 25°C TJ = 25°C
RK = RD′
RK = 0
RK = RD′
RK = 0
RK = RD′
RK = 0
RK = RD′
RK = 0
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
MPF4392, MPF4393
http://onsemi.com
4
Figure 5. Switching Time Test Circuit
10
2.0
15
3.0
5.0
7.0
0.5 1.0 3.0 305.00.30.1 100.050.03
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
50 17020-10-40 80 140-70
r
1.8
1.0
2.0
1.2
1.4
1.6
0.8
0.6
0.4
, DRAIN-SOURCE ON-STATE
ds(on)
RESISTANCE (NORMALIZED)
Tchannel, CHANNEL TEMPERATURE (°C)
1.5
1.0
110
VDD
VGG
RGG
RT
RGEN
50 W
VGEN
RK
RD
OUTPUT
INPUT
50
W
50
W
SET VDS(off) = 10 V
INPUT PULSE
tr ≤ 0.25 ns
tf ≤ 0.5 ns
PULSE WIDTH = 2.0 ms
DUTY CYCLE ≤ 2.0%
RGG & RK
RD′ = RD(RT + 50)
RD + RT + 50
Figure 6. Typical Forward Transfer Admittance
NOTE 1
The switching characteristics shown above were measured using a
test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (−VGG). The
Drain−Source Voltage (VDS) is slightly lower than Drain Supply
Voltage (VDD) due to the voltage divider. Thus Reverse Transfer
Capacitance (Crss) or Gate−Drain Capacitance (Cgd) is charged to
VGG + VDS.
During the turn−on interval, Gate−Source Capacitance (Cgs)
discharges through the series combination of RGen and RK. Cgd
must discharge to VDS(on) through RG and RK in series with the
parallel combination of effective load impedance (R′D) and
Drain−Source Resistance (rds). During the turn−off, this charge
flow is reversed.
Predicting turn−on time is somewhat difficult as the channel
resistance rds is a function of the gate−source voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cgd
discharges through rds, turn−on time is non−linear. During turn−off,
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions:
1) RK is equal to RD′ which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) RK = 0 (low
impedance) the driving source impedance is that of the generator.
Figure 7. Typical Capacitance
ID, DRAIN CURRENT (mA)
2.0
5.0
3.0
7.0
0.5 1.0 3.0 7.05.0 5030
10
20
0.7 2.0 10 20
, FORWARD TRANSFER ADMITTANCE (mmhos)
fs
y
80
120
160
200
1.0 3.0 5.02.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
4.00
40
6.0 7.0 8.0
0
r , DRAIN-SOURCE ON-STATE
ds(on)
RESISTANCE (OHMS)
Tchannel = 25°C
(Cds IS NEGLIGIBLE)
Cgs
Tchannel = 25°C
VDS = 15 V
Figure 8. Effect of Gate−Source Voltage
On Drain−Source Resistance
Figure 9. Effect of Temperature On
Drain−Source On−State Resistance
MPF4392
MPF4393
Cgd
ID = 1.0 mA
VGS = 0
IDSS
= 10
mA
25
mA
50 mA 75 mA 100 mA 125 mA
Tchannel = 25°C
MPF4392, MPF4393
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5
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
, DRAIN-SOURCE ON-STATE
ds(on)
r
20
10
30
40
50
30 40 50 60 70
20
RESISTANCE (OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
, GATE-SOURCE VOLTAGE
GS
V
(VOLTS)
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero−Gate−Voltage Drain Current (IDSS), is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (VGS(off)) and Drain−Source On Resistance
(rds(on)) to IDSS. Most of the devices will be within ±10%
of the values shown in Figure 10. This data will be useful
in predicting the characteristic variations for a given part
number.
For example:
Unknown
rds(on) and VGS range for an MPF4392
The electrical characteristics table indicates that an
MPF4392 has an IDSS range of 25 to 75 mA. Figure 10
shows rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS
75 mA. The corresponding VGS values are 2.2 V and
4.8 V.
Figure 10. Effect of IDSS On Drain−Source
Resistance and Gate−Source Voltage
Tchannel = 25°C
rDS(on) @ VGS = 0
VGS(off)
MPF4392, MPF4393
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6
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
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MPF4392/D
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