ITT Semiconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can (TO-39) Veso up to 120V. ic up to 750mA, Prot =800mW @ 25C. Outline Drawing No. 66 applies. REFERENCE TABLE Max. ratings : Characteristics @ 25C lcpo Fy Vepo Vceo Ic hee @ le max. at Vcp Typ. Stock (Vv) (V) (A) min max, (mA) (nA) (Vv) MHz No. BSYS51 60 25 0.5 40 120 150 100 30 100 2T715E BSY52 66 25 0.5 100 300 150 100 30 130 27776C BSY53 75 30 0.75 40 120 150 10 60 100 2TITIA BSY54 75 630 0.75 100 300 150 10 60 145 277T18X BSY55 120 80 0.5 40 120 150 10 90 100 27779H BSY56 120 . 80 0.5 100 300 150 10 90 145 2T780X BSY87 100 60 0.5 40 120 150 10 75 100 27731R BSY8s 100 +60 0.5 100 300 150 10 75 145 27782G BSY90 60 25 0.5 250 _ 160 10 30 170 27783E 2N1613 75 0 0.5 30 100 1 10 60 80 1046X 2N1711 75 50 0.5 50 200 1 10 60 100 1047R 2N1893 120 80 0.5 30 100 4 10 90 75 10458 NPN Silicon High Speed Switching Transistors Metal can (TO-18). Silicon planar epitaxial construction. Vepo =5V. Pro =300 mW @ 25C. Outline Drawing No. 65 applies. REFERENCE TABLE Max. ratings Characteristics @ 25C lcso @ Ves Veeisaty @'Ic/lg fr Veso Vceo lem hee @ Ic max. max. min. Stock (Vv) (Vv) (mA) min. mA (nA) (Vv) (Vv) (mA) (MHz) No. BSY95A 20 15 100 50 10 50 16 0.35 10/0.35 200 1106H BSY27 20 15 4100 40 10 25 3 0.35 10/1 200 31273C 2N706 25 _ 50 20 10 500 15 0.6 10/1 200 1130H 2N706A 25 15 50 20 1 500 | 15 0.6 > 10/1 200 1131F 2N708 40 15 100 30 10 25 20 0.4 10/1 300 1133B 2N743 20 12 200 10 100 1000 20 1.0 400/10 - 300. 14093E 2N744 20 12 200 20 100 1000 20 1.0 100/10 300 27797D 2N753 25 15 50 40 1 500 15 0.6 10/4 200 277988 2N914 40 15 500 30 10 25 20 0.7 200/20 300 1136G 2N2368 40 15 500 20 10 400 20 0.25 10/1 500 11286 2N2369 40 15 500 40 10 400 20 0.25 10/1 500 7862E 2N2369A 40 15 500 40 10 400 20 0.2 10/1 500 1140D eeeonaeaooooonoouuOunDQuunu0unuaoamaoeaeaeaeeeee eee MANUFACTURERS CURRENT LIST PRICES ARE ALWAYS CHARGED