Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 7 1Publication Order Number:
2N5060/D
2N5060 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
Sensitive Gate Trigger Current − 200 A Maximum
Low Reverse and Forward Blocking Current − 50 A Maximum,
TC = 110°C
Low Holding Current − 5 mA Maximum
Passivated Surface for Reliability and Uniformity
Device Marking: Device Type, e.g., 2N5060, Date Code
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30 − 200 V
Preferred devices are recommended choices for future use
and best overall value.
3
2
1
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
TO−92
CASE 29
STYLE 10
50xx Specific Device Code
Y = Year
WW = Work Week
MARKING
DIAGRAM
2N
50xx
YWW
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open) 2N5060
2N5061
2N5062
2N5064
VDRM,
VRRM 30
60
100
200
V
On-State Current RMS (180° Conduction Angles; TC = 80°C) IT(RMS) 0.8 A
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
IT(AV)
0.51
0.255
A
*Peak Non-repetitive Surge Current,
TA = 25°C
(1/2 cycle, Sine Wave, 60 Hz)
ITSM 10 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
IT(AV)
0.51
0.255
A
*Forward Peak Gate Power (Pulse Width 1.0 sec; TA = 25°C) PGM 0.1 W
*Forward Average Gate Power (TA = 25°C, t = 8.3 ms) PG(AV) 0.01 W
*Forward Peak Gate Current (Pulse Width 1.0 sec; TA = 25°C) IGM 1.0 A
*Reverse Peak Gate Voltage (Pulse Width 1.0 sec; TA = 25°C) VRGM 5.0 V
*Operating Junction Temperature Range TJ−40 to +110 °C
*Storage Temperature Range Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction−to−Case (Note 2) RJC 75 °C/W
Thermal Resistance, Junction−to−Ambient RJA 200 °C/W
*Lead Solder Temperature (Lead Length 1/16 from case, 10 s Max) +230* °C
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM)T
C = 25°C
TC = 110°C
IDRM, IRRM
10
50 A
A
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
(ITM = 1.2 A peak @ TA = 25°C) VTM 1.7 V
Gate Trigger Current (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 )T
C = 25°C
TC = −40°C
IGT
200
350
A
Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C
*(VAK = 7.0 Vdc, RL = 100 )T
C = −40°CVGT
0.8
1.2 V
*Gate Non−Trigger Voltage
(VAK = Rated VDRM, RL = 100 )T
C = 110°CVGD 0.1 V
Holding Current (Note 5) TC = 25°C
*(VAK = 7.0 Vdc, initiating current = 20 mA) TC = −40°CIH
5.0
10 mA
Turn-On Time
Delay Time
Rise Time
(IGT = 1.0 mA, VD = Rated VDRM,
Forward Current = 1.0 A, di/dt = 6.0 A/s
td
tr
3.0
0.2
s
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50 s,
0.1% Duty Cycle, di/dt = 6.0 A/s,
dv/dt = 20 V/s, IGT = 1 mA) 2N5060, 2N5061
2N5062, 2N5064
tq
10
30
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(Rated VDRM, Exponential) dv/dt 30 V/s
3. RGK = 1000 is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle 1%.
5. RGK current is not included in measurement.
*Indicates JEDEC Registered Data.
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak on State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
2N5060 Series
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4
120
50
60
70
80
90
100
110
0 0.1 0.2 0.3 0.4
130
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
a
dc
110
30
50
70
90
130
dc
α
0 0.1 0.2 0.3 0.4
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
T
C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
°
T
A, MAXIMUM ALLOWABLE AMBIENT
°
TEMPERATURE ( C)
α = 30°
α = 30°60°90°
90°
120°
120°180°
CASE MEASUREMENT
POINT − CENTER OF
FLAT PORTION
60°
180°
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
α = CONDUCTION ANGLE
α = CONDUCTION ANGLE
Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature
CURRENT DERATING
P(AV), MAXIMUM AVERAGE POWER
DISSIPATION (WATTS)
5.0
0.05
0.01
0.02
0 0.5 1.0 1.5 2.0
3.0
2.5
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.07
0.03
0.1
0.2
0.3
0.5
0.7
1.0
2.0
5.0
25°C
TJ = 110°C
30
7.0
1.0
3.0
2.0
10
1.0 2.0 3.0 5.0 7.0 10 20 50 70 100
0
0.2
0.4
0.6
a
0.1 0.4
dc
0.8
0 0.2 0.5
α = CONDUCTION ANGLE
0.3
NUMBER OF CYCLES
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
iT, INSTANTANEOUS ON-STATE CURRENT (AMP)
ITSM , PEAK SURGE CURRENT (AMP)
α = 30°
60°90°
120°180°
Figure 3. Typical Forward Voltage
Figure 4. Maximum Non−Repetitive Surge Current
Figure 5. Power Dissipation
CURRENT DERATING
2N5060 Series
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5
0.7
0.3
0.4
0.5
0.6
0.8
VAK = 7.0 V
RL = 100
RGK = 1.0 k
3.0
0.8
0.4
0.6
1.0
2.0
500−75 −50 −25
4.0
25 10075 110
TJ, JUNCTION TEMPERATURE (°C)
2N5060,61
100
VAK = 7.0 V
RL = 100
RGK = 1.0 k
0.2
0.5
1.0
2.0
5.0
10
20
50
200
VAK = 7.0 V
RL = 100
2N5062-64
2N5060-61
TYPICAL CHARACTERISTICS
50075 −50 −25 25 10075 110
TJ, JUNCTION TEMPERATURE (°C)
500−75 −50 −25 25 10075
TJ, JUNCTION TEMPERATURE (°C)
VG, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (NORMALIZED)
IH, HOLDING CURRENT (NORMALIZED)
2N5062-64
0.02 0.2 20105.02.01.00.050.010.002 0.005 0.5
0.02
0.01
0.5
0.1
0.05
0.1
0.2
t, TIME (SECONDS)
1.0
r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED
110
Figure 6. Thermal Response
Figure 7. Typical Gate Trigger Voltage Figure 8. Typical Gate Trigger Current
Figure 9. Typical Holding Current
2N5060 Series
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6
ORDERING INFORMATION
Device Package Shipping
2N5060 TO−92 5,000 Units / Box
2N5060RLRA TO−92 2,000 / Tape & Reel
2N5060RLRAG TO−92
(Pb−Free) 2,000 / Tape & Reel
2N5060RLRM TO−92 2,000 / Ammo Pack
2N5061 TO−92 5,000 Units / Box
2N5061G TO−92
(Pb−Free) 5,000 Units / Box
2N5061RLRA TO−92 2,000 / Tape & Reel
2N5061RLRAG TO−92
(Pb−Free) 2,000 / Tape & Reel
2N5061RLRM TO−92 2,000 / Ammo Pack
2N5062 TO−92 5,000 Units / Box
2N5062G TO−92
(Pb−Free) 5,000 Units / Box
2N5062RLRA TO−92 2,000 / Tape & Reel
2N5062RLRAG TO−92
(Pb−Free) 2,000 / Tape & Reel
2N5064 TO−92 5,000 Units / Box
2N5064RLRA TO−92 2,000 / Tape & Reel
2N5064RLRM TO−92 2,000 / Ammo Pack
2N5064RLRMG TO−92
(Pb−Free) 2,000 / Ammo Pack
2N5060RL1 TO−92 2,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N5060 Series
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7
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
2N5060 Series
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8
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N5060/D
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