2N5684G - ON SEMICONDUCTOR - Datasheet.Cloud

© Semiconductor Components Industries, LLC, 2007

October, 2007 - Rev. 12

1Publication Order Number:

2N5684/D

2N5684 (PNP), 2N5686 (NPN)

High-Current

Complementary Silicon

Power Transistors

These packages are designed for use in high-power amplifier and

switching circuit applications.

Features

•High Current Capability - IC Continuous = 50 Amperes

•DC Current Gain - hFE = 15-60 @ IC = 25 Adc

•Low Collector-Emitter Saturation Voltage -

VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc

•Pb-Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO 80 Vdc

Collector-Base Voltage VCB 80 Vdc

Emitter-Base Voltage VEB 5.0 Vdc

Collector Current - Continuous IC50 Adc

Base Current IB15 Adc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD300

1.715

mW/°C

Operating and Storage Temperature

Range

TJ, Tstg -65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Case qJC 0.584 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

300

00 20 40 60 80 100 120 140 160 180 200

Figure 1. Power Derating

TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

250

150

100

200

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

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50 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60-80 VOLTS, 300 WATTS

TO-204 (TO-3)

CASE 197A

STYLE 1

MARKING

DIAGRAM

2N568x = Device Code

x = 4 or 6

G = Pb-Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

2N568xG

AYYWW

MEX

Device Package Shipping

ORDERING INFORMATION

2N5686 TO-3 100 Units/Tray

2N5686G TO-3

(Pb-Free)

100 Units/Tray

2N5684G TO-3

(Pb-Free)

100 Units/Tray

*For additional information on our Pb-Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

2N5684 (PNP), 2N5686 (NPN)

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.2 Adc, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 40 Vdc, IB = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎ

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎ

ICEX

ÎÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCB = 80 Vdc, IE = 0)

ÎÎÎÎÎ

ICBO

ÎÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 3)

(IC = 25 Adc, VCE = 2.0 Vdc)

(IC = 50 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

5.0

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Saturation Voltage (Note 3)

(IC = 25 Adc, IB = 2.5 Adc)

(IC = 50 Adc, IB = 10 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

ÎÎÎÎ

1.0

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base-Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 2.5 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base-Emitter On Voltage (Note 2) (IC = 25 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current-Gain - Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

ÎÎÎ

2.0

ÎÎÎÎ

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N5684

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5686

ÎÎÎÎÎ

Cob

ÎÎÎ

ÎÎÎÎ

2000

1200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

Figure 2. Switching Time Test Circuit

1.0

0.5

Figure 3. Turn-On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

0.7

0.5

0.2

0.07

0.05

0.02

0.01 0.7 1.0 2.0 3.0 5.0 7.0 10 50

TJ = 25°C

IC/IB = 10

VCC = 30 V

0.03

0.3

0.1

2N5684 (PNP)

2N5686 (NPN)

+2.0 V

tr ≤

20ns

-12V

10 to 100 μs

DUTY CYCLE ≈ 2.0%

VCC -30 V

TO SCOPE

tr ≤ 20 ns

VCC -30 V

TO SCOPE

tr ≤ 20 ns

+10V

-12V

10 to 100 μs

DUTY CYCLE ≈ 2.0%

tr ≤ 20ns

VBB +4.0 V

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN CIRCUITS, REVERSE ALL POLARITIES.

2N5684 (PNP), 2N5686 (NPN)

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Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500

θJC(t) = r(t) θJC

θJC = 0.584°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.05

0.02

0.01

SINGLE PULSE

0.1

1000

0.2

100

1.0

Figure 5. Active-Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

0.1 2.0 3.0 7.0 10 20 30 50 100

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

2.0

IC, COLLECTOR CURRENT (AMP)

TJ = 200°C

CURVES APPLY BELOW

RATED VCEO

1.0 ms

500 μs

1.0

0.5

0.2

5.0

100 μs

5.0 ms

2N5684, 2N5686

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC - VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 200_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

4.0

0.5

Figure 6. Turn-Off Time

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.6

0.4

0.2 0.7 1.0 2.0 3.0 7.0 20 50

TJ = 25°C

IB1 = IB2

IC/IB = 10

VCE = 30 V

0.3

t, TIME (s)μ

5.0

5000

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

500 2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

3000

1000

700

TJ = 25°C

0.8

3.0

2000

2N5684 (PNP)

2N5686 (NPN)

Cib

2N5684 (PNP)

2N5686 (NPN)

Cob

Cib

2N5684 (PNP), 2N5686 (NPN)

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

500

0.5

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5.0 0.7 1.0 2.0 5.0 7.0 10 20 50

100

hFE, DC CURRENT GAIN

TJ = +150°C

+25°C

-55°C

7.0

200

300 VCE = 2.0 V

VCE = 10 V

3.0 30

PNP

2N5684

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

TJ = +150°C

+25°C

-55°C

VCE = 2.0 V

VCE = 10 V

NPN

2N5686

Figure 9. Collector Saturation Region

2.0

0.1

IB, BASE CURRENT (AMP)

00.2 1.0 2.0 5.0 10

0.8

0.4

IC = 10 A

TJ = 25°C

25 A

1.2

1.6

0.5 3.0

40 A

0.1

IB, BASE CURRENT (AMP)

0.2 1.0 2.0 5.0 10

IC = 10 A

TJ = 25°C

25 A

0.5 3.0

40 A

0.3

2.5

0.5

IC, COLLECTOR CURRENT (AMP)

0.7 1.0 2.0 3.0 5.0 10 20 50

2.0

1.5

1.0

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 2.0 V

7.0

2.0

0.5

IC, COLLECTOR CURRENT (AMP)

0.7 1.0 2.0 3.0 5.0 10 20 50

1.6

1.2

0.8

0.4

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

VBE @ VCE = 2.0 V

500

0.5

5.0 0.7 1.0 2.0 5.0 7.0 10 20 50

100

7.0

200

300

3.0 30

2.0

0.8

0.4

1.2

1.6

2N5684 (PNP), 2N5686 (NPN)

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PACKAGE DIMENSIONS

TO-204 (TO-3)

CASE 197A-05

ISSUE K

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

-T- SEATING

PLANE

2 PLD

0.30 (0.012) Y M

0.25 (0.010) T

-Q-

-Y-

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