SPD30N03S2L07T - Infineon Technologies

2005-02-14

Rev. 2.1 Page 1

OptiMOS Power-Transistor Product Summary

VDS 30 V

RDS(on) 6.7 mΩ

ID30 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

• Excellent Gate Charge x RDS(on) product (FOM)

• Superior thermal resistance

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

PG-TO252-3-11

Marking

2N03L07

Type Package Ordering Code

SPD30N03S2L-07 PG-TO252-3-11 Q67042-S4091

Maximum Ratings, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current1)

TC=25°C

ID

30

A

Pulsed drain current

TC=25°C

ID puls 120

Avalanche energy, single pulse

ID=30 A , VDD=25V, RGS=25Ω

EAS 250 mJ

Repetitive avalanche energy, limited by Tjmax2) EAR 13

Reverse diode dv/dt

IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

dv/dt6kV/µs

Gate source voltage V

GS

±20 V

Power dissipation

TC=25°C

Ptot 136 W

Operating and storage temperature T

j

, T

stg

-55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

SPD30N03S2L-07

2005-02-14

Rev. 2.1 Page 2

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case R

thJC

-0.7 1.1 K/W

Thermal resistance, junction - ambient, leaded R

thJA

- - 100

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

-

75

50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

V(BR)DSS 30 - - V

Gate threshold voltage, VGS = VDS

ID=85µA

VGS(th) 1.2 1.6 2

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C

VDS=30V, VGS=0V, Tj=125°C

IDSS

-

0.01

10

1

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

IGSS -1 100 nA

Drain-source on-state resistance

VGS=4.5V, ID=30A

RDS(on) -7.4 9.8 mΩ

Drain-source on-state resistance

VGS=10V, ID=30A

RDS(on) -5.3 6.7

1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25°C, for detailed

information see app.-note ANPS071E available at www.infineon.com/optimos

2Defined by design. Not subject to production test.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

SPD30N03S2L-07

2005-02-14

Rev. 2.1 Page 3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=30A

29 58 -S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

-1900 2530 pF

Output capacitance Coss -740 990

Reverse transfer capacitance Crss -180 270

Gate resistance RG-2.3 -Ω

Turn-on delay time td(on) VDD=15V, VGS=10V,

ID=15A,

RG=3.6Ω

-8 10 ns

Rise time tr-17 26

Turn-off delay time td(off) -62 77.5

Fall time tf-47 59

Gate Charge Characteristics

Gate to source charge Qgs VDD=24V, ID=30A -6 8 nC

Gate to drain charge Qgd -18 27

Gate charge total QgVDD=24V, ID=30A,

VGS=0 to 10V

-51 68

Gate plateau voltage V(plateau) VDD=24V, ID=30A -3.1 -V

Reverse Diode

Inverse diode continuous

forward current ISTC=25°C - - 30 A

Inv. diode direct current, pulsed ISM - - 120

Inverse diode forward voltage VSD VGS=0V, IF=30A -0.9 1.3 V

Reverse recovery time trr VR=15V, IF=lS,

diF/dt=100A/µs

-41 51 ns

Reverse recovery charge Qrr -46 58 nC

SPD30N03S2L-07

2005-02-14

Rev. 2.1 Page 4

1 Power dissipation

Ptot = f (TC)

parameter: VGS≥ 4 V

0 20 40 60 80 100 120 140 160°C 190

TC

0

10

20

30

40

50

60

70

80

90

100

110

120

W

150 SPD30N03S2L-07

Ptot

2 Drain current

ID = f (TC)

parameter: VGS≥ 10 V

0 20 40 60 80 100 120 140 160°C 190

TC

0

4

8

12

16

20

24

A

32 SPD30N03S2L-07

ID

4 Max. transient thermal impedance

ZthJC = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

SPD30N03S2L-07

ZthJC

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TC = 25 °C

10 -1 10 0 10 1 10 2

VVDS

0

10

1

10

2

10

3

10

A

SPD30N03S2L-07

ID

R DS(on) = V DS / I D

1 ms

100 µs

tp = 14.0µs

SPD30N03S2L-07

2005-02-14

Rev. 2.1 Page 5

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

00.5 11.5 22.5 33.5 4V5

VDS

0

5

10

15

20

25

30

35

40

45

50

55

60

A

75 SPD30N03S2L-07

ID

VGS [V]

a

a2.6

b

b2.8

c

c3.0

d

d3.2

e

e3.4

f

f3.6

g

g3.8

h

h4.5

i

Ptot = 136W

i10.0

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS

0 10 20 30 40 50 A65

ID

0

2

4

6

8

10

12

14

16

18

20

Ω

24 SPD30N03S2L-07

RDS(on)

VGS [V] =

d

3.2

e

3.4

f

3.6

g

3.8

h

4.5

i

10.0

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 80 µs

00.5 11.5 22.5 3 V 4

VGS

0

5

10

15

20

25

30

35

40

45

50

A

60

ID

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: gfs

0 20 40 60 80 100 A 130

ID

0

10

20

30

40

50

60

70

S

90

gfs

SPD30N03S2L-07

2005-02-14

Rev. 2.1 Page 6

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 30 A, VGS = 10 V

-60 -20 20 60 100 140 °C 200

Tj

0

2

4

6

8

10

12

Ω

16 SPD30N03S2L-07

RDS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

-60 -20 20 60 100 °C 180

Tj

0

0.5

1

1.5

V

2.5

VGS(th)

1mA

85µA

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

0 5 10 15 20 V 30

VDS

2

10

3

10

4

10

pF

C

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

00.4 0.8 1.2 1.6 22.4 V3

VSD

0

10

1

10

2

10

3

10

A

SPD30N03S2L-07

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 175 °C typ

Tj = 175 °C (98%)

SPD30N03S2L-07

2005-02-14

Rev. 2.1 Page 7

13 Typ. avalanche energy

EAS = f (Tj)

par.: ID = 30 A , VDD = 25 V, RGS = 25 Ω

25 45 65 85 105 125 145 °C 185

Tj

0

20

40

60

80

100

120

140

160

180

200

220

mJ

260

EAS

14 Typ. gate charge

VGS = f (QGate)

parameter: ID = 30 A pulsed

0 10 20 30 40 50 60 nC 80

QGate

0

2

4

6

8

10

12

V

16 SPD30N03S2L-07

VGS

0,8 VDS max

DS max

V0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

parameter: ID=10 mA

-60 -20 20 60 100 140 °C 200

Tj

27

28

29

30

31

32

33

34

V

36 SPD30N03S2L-07

V(BR)DSS

SPD30N03S2L-07

2005-02-14

Rev. 2.1 Page 8

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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characteristics.

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regarding circuits, descriptions and charts stated herein.

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SPD30N03S2L-07