VISHAY
BC327 / BC328
Document Number 85132
Rev. 1.4, 19-May-04
Vishay Semiconductors
www.vishay.com
1
2
1
3E
B
C
18979
123
Small Signal Transistors (PNP)
Features
PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially
suitable for AF-driver stages and low-power output
stages.
These types are also available subdivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementary types, the
NPN transistors BC337 and BC338 are recom-
mended.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Part Type differentiation Ordering code Remarks
BC327-16 hFE, typ. 160 @ 100 mA BC327-16-BULK or BC327-16-TAP Bulk / Ammopack
BC327-25 hFE, typ. 250 @ 100 mA BC327-25-BULK or BC327-25-TAP Bulk / Ammopack
BC327-40 hFE, typ. 400 @ 100 mA BC327-40-BULK or BC327-40-TAP Bulk / Ammopack
BC328-16 hFE, typ. 130 @ 300 mA BC328-16-BULK or BC328-16-TAP Bulk / Ammopack
BC328-25 hFE, typ. 200 @ 300 mA BC328-25-BULK or BC328-25-TAP Bulk / Ammopack
BC328-40 hFE, typ. 320 @ 300 mA BC328-40-BULK or BC328-40-TAP Bulk / Ammopack
Parameter Test condition Part Symbol Value Unit
Collector - emitter voltage BC327 - VCES 50 V
BC328 - VCES 30 V
BC327 - VCEO 45 V
BC328 - VCEO 25 V
Emitter - base voltage - VEBO 5V
Collector current - IC800 mA
Peak collector current - ICM 1A
Base current - IB100 mA
Power dissipation Tamb = 25 °C Ptot 6251) mW
www.vishay.com
2
Document Number 85132
Rev. 1.4, 19-May-04
VISHAY
BC327 / BC328
Vishay Semiconductors
Maximum Thermal Resistance
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Electrical DC Characteristics
Electrical AC Characteristics
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RθJA 2001) °C/W
Junction temperature Tj150 °C
Storage temperature range TS- 65 to + 150 °C
Parameter Test condition Part Symbol Min Typ Max Unit
DC current gain
(current gain grup - 16)
- VCE = 1 V, - IC = 100 mA BC327-16 hFE 100 160 250 V
DC current gain
(current gain grup - 25)
- VCE = 1 V, - IC = 100 mA BC327-25 hFE 160 250 400 V
DC current gain
(current gain grup - 40)
- VCE = 1 V, - IC = 100 mA BC327-40 hFE 250 400 630 V
DC current gain
(current gain grup - 16)
- VCE = 1 V, - IC = 300 mA BC328-16 hFE 60 130 V
DC current gain
(current gain grup - 25)
- VCE = 1 V, - IC = 300 mA BC328-25 hFE 100 200 V
DC current gain
(current gain grup - 40)
- VCE = 1 V, - IC = 300 mA BC328-40 hFE 170 320 V
Collector - emitter cutoff current - VCE = 45 V BC327 - ICES 2 100 nA
- VCE = 25 V BC328 - ICES 2 100 nA
- VCE = 45 V, Tamb = 125 °C BC327 - ICES 10 µA
- VCE = 25 V, Tamb = 125 °C BC328 - ICES 10 µA
Collector saturation voltage - IC = 500 mA, - IB = 50 mA - VCEsat 0.7 V
Base - emitter voltage - VCE = 1 V, - IC = 300 mA - VBE 1.2 V
Collector - emitter breakdown
voltage
- IC = 10 mA BC327 - V(BR)CEO 45 V
BC328 - V(BR)CEO 25 V
- IC = 0.1 mA BC327 - V(BR)CEO 50 V
BC328 - V(BR)CES 30 V
Emitter - base breakdown
voltage
- IE = 0.1 mA - V(BR)EBO 5V
Parameter Test condition Symbol Min Ty p Max Unit
Gain - bandwidth product - VCE = 5 V, - IC = 10 mA,
f = 50 MHz
fT100 MHz
Collector - base capacitance - VCB = 10 V, f = 1 MHz CCBO 12 pF
VISHAY
BC327 / BC328
Document Number 85132
Rev. 1.4, 19-May-04
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Fig. 1 Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 Pulse Thermal Resistance vs. Pulse Duration
Fig. 3 Collector Current vs. Base-Emitter Voltage
200
18845
T
amb
- Ambient Temperature ( °C)
1
0.8
0.6
0.4
0.2
20 40 60 80 100 120 140 1601800
0
P - Admissible Power Dissipation(W)
tot
t
p
- Pulse Length ( s )
10
-6
10
-5
10
-4
10
-3
10
-2
10
2
10 10
-1
1
18847
r - Pulse Thermal Resistance (
thA
10
3
10
1
10
-1
10
2
ν/T=t
p
P
I
T
t
p
0.5
0.2
0.1
0.05
0.02
0.01
ν=0
0.005
°C/W)
-I - Collector Current ( mA )
C
18877
-V
BE
- Base-Emitter Voltage(V)
1
0.1
10
100
1000
0.20 1 1.2 1.4 1.60.4 0.6 0.8 1.8 2
25°C
-50°C
150°C
typical
limits
at T
amb
=25
°C
Fig. 4 Collector-Emitter Cutoff Current vs. Ambient Temperature
Fig. 5 DC Current Gain vs. Collector Current
Fig. 6 Common Emitter Collector Characteristics
10
100
10000
1000
1
200
18878
T
amb
- Ambient Temperature (°C)
20 40 60 80 100 120 140 160 1800
-I - Collector-Emitter Cutoff Current ( nA )
CES
maximum
typical
BC 327: -V = 45 V
CE
BC 328: -V = 25 V
CE
18885
10
100
1000
10.1 10 100 1000
h - DC Current Gain
FE
I - Collector Current ( mA )
C
Tamb =25°C
-50°C
150 °C
-V CE =1V
-I - Collector Current ( mA )
C
0 0.4 0.8 1.2 1.6 2
18879
-VCE - Collector Emitter Voltage(V)
100
0
200
300
400
500
-IB= 0.2 mA
0.4
0.6
0.8
2.4
1.2
1.4
1.8
1
1.6
2
2.8
3.2
www.vishay.com
4
Document Number 85132
Rev. 1.4, 19-May-04
VISHAY
BC327 / BC328
Vishay Semiconductors
Fig. 7 Common Emitter Collector Characteristics
Fig. 8 Common Emitter Collector Characteristics
Fig. 9 Collector Saturation Voltage vs. Collector Current
-I - Collector Current ( mA )
C
0 0.4 0.8 1.2 1.6 2
18880
-VCE - Collector Emitter Voltage(V)
100
200
300
400
500
0
0.75
0.8
0.9 0.85
-VBE = 0.7 V
-I - Collector Current ( mA )
C
0 2 4 6 8 101214161820
18881
-VCE - Collector Emitter Voltage(V)
0
20
40
60
80
100
-IB= 0.05 mA
0.1
0.15
0.2
0.25
0.3
0.35
typical
limits
at T
amb
=25
°C
-I
B
-I =10
C
150°C25°C
-50
°C
0
0.1
0.2
0.3
0.4
0.5
18882
-I
C
- Collector Current ( mA )
0.1 1 10 100 1000
-V - Collector Saturation Voltage(V)
CEsat
Fig. 10 Base Saturation Voltage vs. Collector Current
Fig. 11 Gain-Bandwidth Product vs. Collector Current
typical
limits
at T
amb
=25
°C
-I
B
-I =10
C
150°C
25°C
-50
°C
0
1
2
18883
-I
C
- Collector Current ( mA )
0.1 1 10 100 1000
-V - Base Saturation Voltage ( V )
BEsat
10
100
1000
1 10 100 1000
f - Gain-Bandwidth Product ( MHz )
T
-I - Collector Current ( mA )
C
18884
amb =25°T
f=20MHz
CE =5V-V
1V
VISHAY
BC327 / BC328
Document Number 85132
Rev. 1.4, 19-May-04
Vishay Semiconductors
www.vishay.com
5
Packaging for Radial Taping
±1 12.7
±1
0.3
± 0.2
±1
-0.5
18
12 ±
0.3
9
± 0.5
4
± 0.2
12.7
± 0.2
6.3
± 0.7
5.08
± 0.7
2.54
+ 0.6
- 0.1
Measure limit over 20 index - holes: ± 1
"H"
Vers. Dim. "H"
FSZ 27 ± 0.5
0.9 max
±2
18787
www.vishay.com
6
Document Number 85132
Rev. 1.4, 19-May-04
VISHAY
BC327 / BC328
Vishay Semiconductors
Package Dimensions in mm (Inches)
Bottom
View
4.6 (0.181) 3.6 (0.142)
min. 12.5 (0.492) 4.6 (0.181)
max. 0.55 (0.022)
2.5 (0.098)
18776
VISHAY
BC327 / BC328
Document Number 85132
Rev. 1.4, 19-May-04
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423