SFH601
www.vishay.com Vishay Semiconductors
Rev. 1.6, 23-Jul-15 2Document Number: 83663
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
DC forward current IF60 mA
Surge forward current t = 10 μs IFSM 2.5 A
Total power dissipation Pdiss 100 mW
OUTPUT
Collector emitter voltage VCEO 100 V
Emitter base voltage VEBO 7V
Collector current IC50 mA
t = 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
COUPLER
Storage temperature range Tstg -55 to +150 °C
Ambient temperature range Tamb -55 to +100 °C
Junction temperature Tj100 °C
Soldering temperature (1) Max. 10 s, dip soldering:
distance to seating plane 1.5 mm Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA VF- 1.25 1.65 V
Breakdown voltage IR = 10 μA VBR 6--V
Reverse current VR = 6 V IR-0.0110μA
Capacitance VF = 0 V, f = 1 MHz CO-25-pF
Thermal resistance Rthja - 750 - K/W
OUTPUT
Collector emitter capacitance f = 1 MHz, VCE = 5 V CCE -6.8-pF
Collector base capacitance f = 1 MHz, VCB = 5 V CCB -8.5-pF
Emitter base capacitance f = 1 MHz, VEB = 5 V CEB -11-pF
Thermal resistance Rthja - 500 - K/W
Collector emitter leakage current VCE =10 V
SFH601-1 ICEO - 2 50 nA
SFH601-2 ICEO - 2 50 nA
SFH601-3 ICEO - 5 100 nA
SFH601-4 ICEO - 5 100 nA
COUPLER
Saturation voltage collector emitter IF = 10 mA, IC = 2.5 mA VCEsat - 0.25 0.4 V
Capacitance (input to output) VI-O = 0, f = 1 MHz CIO -0.6- pF