Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 002-00778 Rev. *K Revised December 11, 2015
S29AL008J
8 Mbit (1 M x 8-Bit/512 K x 16-Bit), 3 V
Boot Sector Flash
Distinctive Characteristics
Architectural Advantages
Single Power Supply Operation
– Full voltage range: 2.7 to 3.6 volt read and write operations for
battery-powered applications
Manufactured on 110 nm Process Technology
– Fully compatible with 200 nm S29AL008D
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number
accessible through a command sequence
– May be programmed and locked at the factory or by the customer
Flexible Sector Architecture
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte
sectors (byte mode)
– One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword
sectors (word mode)
Sector Group Protection Features
– A hardware me thod of lo cking a sector t o p reve nt a ny program o r
erase operations within that sect or
– Sectors can be locked in-system or via programming equipment
– Temporary Sector Unprotect feature allows code changes in
previously locked sectors
Unlock Bypass Program Command
– Reduces overall programming time when issuing multiple program
command sequences
Top or Bottom Boot Block Configurations Available
Compatibility with JEDEC standards
– Pinout and software compatible with single-power supply Flash
– Superior inadvertent write protection
Performance Chara cte ri st ic s
High Performance
– Access times as fast as 55 ns
– Extended temperature range (–40°C to +125°C)
Ultra Low Power Consumption (typical values at 5 MHz)
– 0.2 µA Automatic Sleep mode current
– 0.2 µA standby mode current
– 7 mA read current
– 20 mA program/erase current
Cycling Endurance: 1,000,000 cycles per sector typical
Data Retention: 20 years typical
Package Options
48-ball Fine-pitch BGA
48-pin TSOP
Software Features
CFI (Common Flash Interface) Compliant
– Provides device-specific information to the system, allowing host
software to easily reconfigure for different Flash devices
Erase Suspend/Erase Resume
– Suspends an erase operation to read data from, or program data
to, a sector that is not being erased, then resumes the erase
operation
Data# Polling and Toggle Bits
– Provides a software method of detecting program or erase
operation completion
Hardware Features
Ready/Busy# Pin (RY/BY#)
– Provides a hardware method of detecting program or erase cycle
completion
Hardware Reset Pin (RESET#)
– Hardware method to reset the device to reading array data
WP# input pin
– For boot sector devices: at VIL, protects first or last 16 Kbyte
sector depending on boot configuration (top boot or bottom boot)
Document Number: 002-00778 Rev. *K Page 2 of 52
S29AL008J
General Description
The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in
48-ball Fine-pitch BGA (0.8 mm pitch), and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-
wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC
supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard
EPROM programmers.
The de v ic e of f er s a c c ess t im e s o f up to 5 5 n s allowing high speed microprocessors to operate with out wait states. To eliminate bus
contention the device has separate chi p enab le (CE#), write enable (WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated
voltages are provided for the program and erase operations.
The S29AL008J is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written
to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine
that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming
and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an
internal algorithm that automati cally times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode
facilitates faster programming times by requiring only two write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. Th is initiates the Embedded Erase algorithm—an internal
algorithm that automatically preprograms the array (if it is not already programmed) before executin g the erase operation. During
erase, the device automatically times the erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7
(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other
sectors. The device is fully erased when shipped from the factory.
Hardware data prote ction measures include a low VCC detector that automatically inhibits write operations during power
transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors
of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or
program data to, any sector that is no t selected for erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation in progres s and resets the internal state machine to readin g array data. The
RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system
microprocessor to read the boot-up firmware from the Flash memory.
The device offers two power-saving features . When addresses have been stable for a specified amount of time, the device en ters
the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in
both these modes.
Spansion Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality,
reliability and cost effectiveness. The device electrically erases a ll b i t s w i t h i n a s e c t o r s i m u lt a n eously via Fowler-Nordheim
tunneling. The data is programmed using hot electron injection.
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S29AL008J
Contents
1. Product Selector Guid e............................................... 4
2. Block Diagram.............................................................. 4
3. Connection Diagrams.................................................. 5
3.1 Special Handling Instructions......................................... 6
4. Pin Configu rati on......................................................... 6
5. Logic Symbol ............................................................... 6
6. Ordering Information................................................... 7
6.1 S29AL008J Standard Products...................................... 7
7. Device Bus Operations................................................ 8
7.1 Word/Byte Configuration........... .............. ... ... .............. .. . 8
7.2 Requirements for Reading Array Data........................... 8
7.3 Writing Commands/Command Sequences.................... 9
7.4 Program and Erase Operation Status............................ 9
7.5 Standby Mode................................................................ 9
7.6 Automatic Sleep Mode................................................. 10
7.7 RESET#: Hardware Reset Pin..................................... 10
7.8 Output Disable Mode................................................... 11
7.9 Autoselect Mode....................... ... ... .............. .. ............. 12
7.10 Sector Group Protection/Unprotection......................... 13
7.11 Temporary Sector Group Unprotect............................. 14
8. Secured Silicon Sector Flash Memory Region ....... 16
8.1 Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory........................................ 16
8.2 Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected at the Factory..................... 16
9. Common Flash Memory Interface (CFI)................... 17
9.1 Hardware Data Protection.................... ........................ 20
10. Command Definitions................................................ 21
10.1 Reading Array Data ..................................................... 21
10.2 Reset Command....................... ... ... .............. .. ............. 21
10.3 Autoselect Command Sequence ................................. 21
10.4 Enter Secured Silicon Sector/Exit Secured
Silicon Sector Command Sequence............................ 22
10.5 Word/Byte Program Command Sequence................... 22
10.6 Unlock Bypass Command Sequence .......................... 22
10.7 Chip Erase Command Sequence ................................ 23
10.8 Sector Erase Command Sequence ............................. 24
10.9 Erase Suspend/Erase Resume Commands................ 24
10.10Command Definitions Table........................................ 25
11. Write Operation Status .............................................. 27
11.1 DQ7: Data# Polling...................................................... 27
11.2 RY/BY#: Ready/Busy#................................................. 28
11.3 DQ6: Toggle Bit I ......................................................... 29
11.4 DQ2: Toggle Bit II ........................................................ 29
11.5 Reading Toggle Bits DQ6/DQ2.................................... 30
11.6 DQ5: Exceeded Timing Limits ..................................... 31
11.7 DQ3: Sector Erase Timer............................................. 31
12. Absolute Maximum Ratings...................................... 32
13. Operating Ranges...................................................... 32
14. DC Characteristics...................................................... 33
14.1 CMOS Compatible........................................................ 33
15. Test Cond itions........................................................... 34
16. Key to Switchin g Waveforms..................................... 34
17. AC Characteristics...................................................... 35
17.1 Read Operations........................................................... 35
17.2 Hardware Reset (RESET#)........................................... 36
17.3 Word/Byte Co n fi g uration (BYTE#)................................ 37
17.4 Erase/Program Operations.................... ....................... 38
17.5 Temporary Sector Group Unprotect.............................. 41
17.6 Alternate CE# Controll ed Erase/Program Operations .. 42
18. Erase and Programming Performance ..................... 43
19. TSOP and BGA Pin Capacitance............................... 44
20. Physical Dimen sion s.................................................. 45
20.1 TS 048—48-Pin Standard TSOP.................................. 45
20.2 VBK048—48-Ball Fine-Pitch Ball Grid Array (BGA)
8.15 mm x 6.15 mm...................................................... 46
21. Revision History.......................................................... 47
Document Number: 002-00778 Rev. *K Page 4 of 52
S29AL008J
1. Product Selector Guide
Note
See AC Characteristics on page 35 for full specifications.
2. Block Diagram
Family Part Number S29AL008J
Speed Option Volt age Range: VCC = 2.7-3.6V 70
VCC = 3.0-3.6V 55
Max access time, ns (tACC)5570
Max CE# access time, ns (tCE)5570
Max CE# access time, ns (tOE)3030
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
VCC Detector
State
Control
Command
Register
VCC
VSS
WE#
BYTE#
WP#
CE#
OE#
DQ0–DQ15 (A-1)
Sector Switches
RY/BY#
RESET#
Data
Latch
Y-Gating
Cell Matrix
Address Latch
A0–A18
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S29AL008J
3. Connection Diagrams
Figure 3. 1 48-pin Standard TSOP (TS048)
Figure 3.2 48-ball Fine-pitch BGA (VBK048)
A1
A15
A18
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
WP#
RY/BY#
A17
A7
A6
A5
A4
A3
A2
1
16
2
3
4
5
6
7
8
17
18
19
20
21
22
23
24
9
10
11
12
13
14
15
A16
DQ2
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
48
33
47
46
45
44
43
42
41
40
39
38
37
36
35
34
25
32
31
30
29
28
27
26
A1 B1 C1 D1 E1 F1 G1 H1
A2 B2 C2 D2 E2 F2 G2 H2
A3 B3 C3 D3 E3 F3 G3 H3
A4 B4 C4 D4 E4 F4 G4 H4
A5 B5 C5 D5 E5 F5 G5 H5
A6 B6 C6 D6 E6 F6 G6 H6
DQ15/A-1 VSS
BYTE#A16A15A14A12A13
DQ13 DQ6DQ14DQ7A11A10A8A9
VCC DQ4DQ12DQ5NCNCRESET#WE#
DQ11 DQ3DQ10DQ2NCA18WP#RY/BY#
DQ9 DQ1DQ8DQ0A5A6A17A7
OE# VSS
CE#A0A1A2A4A3
(Top View, Balls Facing Down)
Document Number: 002-00778 Rev. *K Page 6 of 52
S29AL008J
3.1 Special Handling Instructions
Special handling is required for Flash Memory prod ucts in BGA packages.
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data
integrity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time.
4. Pin Configuration
5. Logic Symbol
A0–A18 19 addresses
DQ0–DQ14 15 data input s/outputs
DQ15/A-1 DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode)
BYTE# Selects 8-bit or 16-bit mode
CE# Chip enable
OE# Output enable
WE# Write enable
WP# Write protect: The WP# contains an internal pull-up; when unconnect ed, WP is at VIH.
RESET# Hardware reset
RY/BY# Ready/Busy output
VCC 3.0 volt-only single power su pply (see Product Select or Guide on page 4 for speed options and voltage supply
tolerances)
VSS Device ground
NC Pin not connected internally
19
16 or 8
DQ0–DQ15
(A-1)
A0–A18
CE#
OE#
WE#
RESET#
BYTE# RY/BY#
WP#
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S29AL008J
6. Ordering Information
6.1 S29AL008J Standard Products
Spansion standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the elements below.
Valid Combinations
Valid Combinations list configuration s pl anned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combin ations.
Notes
1. Type 0 is standard. Specify other options as required.
2. Type 1 is standard. Specify other options as required.
3. TSOP package markings omit packing type desi gnator from ordering p art number.
4. BGA package marking omits leading S29 and packing type designator from ordering part number.
S29AL008J 70 T F I 01 0
Packing Type
0=Tray
2 = 7” Tape and Reel
3 = 13” Tape and Reel
Model Number
01 = VCC = 2.7-3.6V, top boot sector device (CFI Support)
02 = VCC = 2.7-3.6V, bottom boot sector device (CFI Support)
03 = VCC = 2.7-3.6V, top boot sector device (No CFI Support )
04 = VCC = 2.7-3.6V, bottom boot sector device (No CFI Support)
R1 = VCC = 3.0-3.6V, top boot sector device (CFI Support)
R2 = VCC = 3.0-3.6V, bottom boot sector device (CFI Support)
Temper ature Range
I = Industrial (-40°C to +85°C)
N = Extended (-40°C to +125°C)
Package Material Set
F = Pb-Free
H = Low-Halogen, Pb-Free
Package Type
T = Thin Small Outline Package (TSOP) Stan dard Pinout
B = Fine-pitch Ball-Grid Array Package
Speed Option
55 = 55 ns Access Speed
70 = 70 ns Access Speed
Device Number/Description
S29AL008J
8 Megabit Flash Memory manufactured using 110 nm process technology
3.0 Volt-only Read, Program, and Erase
S29AL008J Valid Combination Package Description
Device Number Speed
Option Package Type, Material, a nd
Te mperatur e R a n ge Model
Number PackingType
S29AL008J
55 TFI, TFN R1, R2 0, 3 (Note 1) TS048 (Note 3) TSOP
BFI, BFN, BHI, BHN 0, 2, 3 (Note 1) VBK048 (Note 4) Fine-Pitch BGA
70
TFI, TFN 01, 02 0, 3 (Note 1) TS048 (Note 3) TSOP
BFI, BFN, BHI, BHN 0, 2, 3 (Note 1) VBK048 (Note 4) Fine-Pitch BGA
TFI 03, 04 0, 3 (Note 1) TS048 (Note 3) TSOP
BFN, BHN 0, 2, 3 (Note 1) VBK048 (Note 4) Fine-Pitch BGA
Document Number: 002-00778 Rev. *K Page 8 of 52
S29AL008J
7. Device Bus Operations
This section describes the re quirements and use of the device bus operations, which are initiated through the interna l command
register. The command register itself doe s not occupy any addressable memory location. The register is composed of latches that
store the commands, along with the address and data information needed to execute the command. The contents of the register
serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table lists the device bus
operations, the inputs and control leve ls they require, and the resulting output. The following subsections describe each of these
operations in further detail.
Legend
L = Logic Low = VIL; H = Logic High = VIH; VID = 8.5 V to 12.5 V; X = Don’t Care; AIN = Address In; DOUT = Data Out
Notes
1. Address In = Amax:A0 in WORD mode (BYTE#=V IH), Address In = Amax:A-1 in BYTE mode (BYTE#=VIL). Sector addresses are Amax to A12 in both WORD mode
and BYTE mode.
2. The sector group pro tect and sector group unprotect functions may also be implemented via programming equipment. See Sector Group Protect i on/Unprotection
on page 13.
3. If WP# = VIL, the outermost sector remains protected (determined by device configuration). If WP# = VIH, the outermost sector pro tection depends on whet her the
sector was last protected or unprotected using th e method described in Sectio n 7.10, Sector Group Prote ction/Unp rotecti on on page 13. The WP# contains an internal
pull-up; when unconnected, WP is at VIH.
4. DIN or DOUT as required by command sequence, data polling, or sector group protection algorithm.
7.1 Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word configuration. If the BYTE# pin is
set at logic 1, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and control led by
CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
7.2 Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power contro l and selects the
device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines
whether the device outputs array da ta in words or bytes.
The internal state machine is set for reading array data upon device power-up, or afte r a hardware reset. This ensures that no
spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid addresses on the device address inputs prod uce valid data on the
device data outputs. The device remains enabled fo r read access until the command regi ster contents are altered.
S29AL008J Device Bus Operation s
Operation CE# OE# WE# RESET# WP# Addresses
(Note 1) DQ0–
DQ7
DQ8–DQ15
BYTE#
= VIH
BYTE#
= VIL
Read L L H H X AIN DOUT DOUT DQ8–DQ14 = High-Z,
DQ15 = A-1
Write L H L H (Note 3) AIN (Note 4) (Note 4)
Standby VCC
0.3 V XXVCC
0.3 V X X High-Z High-Z High-Z
Output Disable L H H H X X High-Z High-Z High-Z
Reset X X X L X X High-Z High-Z High-Z
Sector Group Protect
(2) (3) LHL V
ID H
Sector Address,
A6 = L,
A3 = A2 = L,
A1 = H, A0 = L
(Note 4) XX
Sector Group
Unprotect (2) (3) LHL V
ID H
Sector Address,
A6 = H,
A3 = A2 = L,
A1 = H, A0 = L
(Note 4) XX
Temporary Sector
Group Unprotect XXX V
ID HA
IN (Note 4) (Note 4) High-Z
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S29AL008J
See Reading Array Data on page 21 for more information. Refer to the AC Read Operations on page 35 for timing specifications and
to Figure 17.1 on page 35 for the ti ming diagram. ICC1 in DC Characteristics on page 33 represents the active current specification
for reading array data.
7.3 Writing Commands/Command Sequences
To write a command or comma nd sequence (which includes programming data to the device and era sing sectors of memory), the
system must drive WE# and CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. See Word/Byte
Configuration on page 8 for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode ,
only two write cycles are required to program a word or byte, instead of four. Word/Byte Program Command Sequence on page 22
has details on programming data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table on page 11 and Table on page 12 indicate
the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector.
The Command Definitions on page 21 has details on erasing a sector or the entire chip, or suspen ding/resuming the erase
operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read
autoselect codes from the internal register (which is separate fro m the memory array) on DQ7–DQ0. Standard read cycle timings
apply in this mode. Refer to Autoselect Mode on page 12 and Autoselect Command Sequence on page 21 for more information.
ICC2 in DC Characteristics on page 33 represents the active current specification for the write mode. AC Characteristics on page 35
contains timing specification tables and timin g diagrams for write operations.
7.4 Program and Erase Operation Status
During an erase or program operation, the system may check the status of the operation by reading the status bits on DQ7–DQ0.
Standard read cycle timings and ICC read specifications apply. Refer to Write Operation Status on page 27 for more information, and
to AC Characteristics on pag e 35 for timing diagrams.
7.5 Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of th e OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC 0.3 V. (Note that this is a more
restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC 0.3 V, the device will be in the standby
mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in
either of these standby modes, before it is ready to read data .
If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
ICC3 and ICC4 represents the standby current specifi cati on shown in the table in DC Characteristics on page 33.
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S29AL008J
7.6 Automatic Sleep Mode
The automatic sleep mode minimize s Flash device energy consumption. Th e device automatica lly enables this mode when
addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals.
Standard address access timings provide ne w data when ad dresses are changed. While in sleep m ode, output data is latched and
always available to the system. ICC4 in the DC Characteristics on page 33 represents the automatic sleep mode current
specification.
7.7 RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the system drives the RESET#
pin to VIL for at least a period of tRP, the device immediately terminates any operation in progress, tristates all data output pins, and
ignores all read/write attemp ts for the duration of the RESET# pulse. The device also resets the internal state machine to reading
array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence,
to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS ±0.3 V, the device draws CMOS standby
current (ICC4). If RESET# is held at VIL but not within VSS ± 0.3/0.1 V, the stan dby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the
system to read the boot-up firmware from the Flash memory. Note that the CE# pin should only go to VIL after RESET# has gone to
VIH. Keeping CE# at VIL from power up through the first read could cause the first read to retrieve erroneous data.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy) until the internal reset operation is
complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is
1), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after
the RESET# pin returns to VIH.
Refer to the tables in AC Characteristics on page 35 for RESET# parameters and to Figure 17.2 on page 36 for the timing diagram.
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S29AL008J
7.8 Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state.
Note
Address range is A18:A-1 in byte mode and A19:A0 in word mode. See Word/Byte Configuration on page 8.
S29AL008J Top Boot Bl ock Sector Addresses
SectorA18A17A16A15A14A13A12 Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
(x8)
Address Range (x16)
Address Range
SA00000XXX 64/32 00000h–0FFFFh 00000h–07FFFh
SA10001XXX 64/32 10000h–1FFFFh 08000h–0FFFFh
SA20010XXX 64/32 20000h–2FFFFh 10000h–17FFFh
SA30011XXX 64/32 30000h–3FFFFh 18000h–1FFFFh
SA40100XXX 64/32 40000h–4FFFFh 20000h–27FFFh
SA50101XXX 64/32 50000h–5FFFFh 28000h–2FFFFh
SA60110XXX 64/32 60000h–6FFFFh 30000h–37FFFh
SA70111XXX 64/32 70000h–7FFFFh 38000h–3FFFFh
SA81000XXX 64/32 80000h–8FFFFh 40000h–47FFFh
SA91001XXX 64/32 90000h–9FFFFh 48000h–4FFFFh
SA101010XXX 64/32 A0000h–AFFFFh 50000h–57FFFh
SA111011XXX 64/32 B0000h–BFFFFh 58000h–5FFFFh
SA121100XXX 64/32 C0000h–CFFFFh 60000h–67FFFh
SA131101XXX 64/32 D0000h–DFFFFh 68000h–6FFFFh
SA141110XXX 64/32 E0000h–EFFFFh 70000h–77FFFh
SA1511110XX 32/16 F0000h–F7FFFh 78000h–7BFFFh
SA161111100 8/4 F8000h–F9FFFh 7C000h–7CFFFh
SA171111101 8/4 FA000h–FBFFFh 7D000h–7DFFFh
SA18111111X 16/8 FC000h–FFFFFh 7E000h–7FFFFh
Secured Silicon Sector Addresses (Top Boot)
Sector Size (bytes/words) x8 Address Range x16 Address Range
256/128 FFF00h–FFFFFh 7FF80h–7FFFFh
Document Number: 002-00778 Rev. *K Page 12 of 52
S29AL008J
Note
Address range is A18:A-1 in byte mode and A19:A0 in word mode. See the Word/Byte Configuration on page 8.
7.9 Autoselect Mode
The autoselect mode provid es manufacturer and device identifica tion, and sector group protection verification, through identifier
codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be
programmed with its corresponding programming algorithm. However, th e autosele ct codes can also be accessed in-system
through the command register.
When using programmi ng equipment, the autoselect mode requires VID (8.5 V to 12.5 V) on address pin A9. Address pins A6 and
A3–A0 must be as shown in Table . In addition, when verifying sector group protection, the sector address must appear on the
appropriate highest order address bits (see Table on page 11 and Table on page 12). Table shows the remaining address bits that
are don’t care. When all necessary bits have been set as required , the programming equipment may then read the corresponding
identifier code on DQ7-DQ0.
To access the autoselect codes in-system, the host system can issue the autoselect command via the c ommand register, as shown
in Table on page 25. This method does not require VID. See Command Definitions on page 21 for details on using the autoselect
mode.
S29AL008J Bottom Boot Block Sector Addresses
SectorA18A17A16A15A14A13A12 Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
(x8)
Address Range (x16)
Address Range
SA0000000X 16/8 00000h–03FFFh 00000h–01FFFh
SA10000010 8/4 04000h–05FFFh 02000h–02FFFh
SA20000011 8/4 06000h–07FFFh 03000h–03FFFh
SA300001XX 32/16 08000h–0FFFFh 04000h–07FFFh
SA40001XXX 64/32 10000h–1FFFFh 08000h–0FFFFh
SA50010XXX 64/32 20000h–2FFFFh 10000h–17FFFh
SA60011XXX 64/32 30000h–3FFFFh 18000h–1FFFFh
SA70100XXX 64/32 40000h–4FFFFh 20000h–27FFFh
SA80101XXX 64/32 50000h–5FFFFh 28000h–2FFFFh
SA90110XXX 64/32 60000h–6FFFFh 30000h–37FFFh
SA100111XXX 64/32 70000h–7FFFFh 38000h–3FFFFh
SA111000XXX 64/32 80000h–8FFFFh 40000h–47FFFh
SA121001XXX 64/32 90000h–9FFFFh 48000h–4FFFFh
SA131010XXX 64/32 A0000h–AFFFFh 50000h–57FFFh
SA141011XXX 64/32 B0000h–BFFFFh 58000h–5FFFFh
SA151100XXX 64/32 C0000h–CFFFFh 60000h–67FFFh
SA161101XXX 64/32 D0000h–DFFFFh 68000h–6FFFFh
SA171110XXX 64/32 E0000h–EFFFFh 70000h–77FFFh
SA181111XXX 64/32 F0000h–FFFFFh 78000h–7FFFFh
Secured Silicon Sector Addresses (Bottom Boot)
Sector Size (bytes/words) x8 Address Range x16 Address Range
256/128 000000h–0000FFh 00000h–0007Fh
Document Number: 002-00778 Rev. *K Page 13 of 52
S29AL008J
Legend
L = Logic Low = VIL; H = Logic High = VIH; S A = Sector Address; X = Don’t care
Note
The autoselect codes may also be accessed in-system via command sequences. See Table on page 25.
7.10 Sector Group Protection/Unprotection
The hardware sector group protec tion feature disables both program and erase operations in any sector group (se e Table
on page 11 to Table on page 12). The hardware sector group unprotection feature re-enables both program and erase operations in
previously protected sector groups. Sector group prote ction/unprotection can be implemented via two methods.
Sector protection/unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming
equipment. Figure 7.2 on page 15 shows the algorithms and Figure 17.11 on page 41 shows the timing diagram. This method uses
standard microprocessor bus cycle timing. For sector group unprotect, all unprotected sector groups must first be protected prior to
the first sector group unprotect write cycle.
The device is shipped with all sector groups unprotected. Spansion offers the option of programming and protecting sector groups at
its factory prior to shipping the device through Spansion Programming Service. Contact a Spansion representative for details.
It is possible to determine whether a sector group is protected or unprotected. See Autoselect Mode on pag e 12 for deta ils.
S29AL008J Autoselect Codes (High Voltage Method)
Description Mode CE# OE# WE#
A18
to
A10 A9
A8
to
A7 A6
A5
to
A4
A3
to
A2 A1 A0
DQ8
to
DQ15
DQ7
to
DQ0
Manufacturer ID: Spansion L L H X VID XLXLLL X 01h
Device ID: S29AL008J
(Top Boot Block) Word L L H XV
ID XLXLLH 22h DAh
Byte L L H X DAh
Device ID: S29AL008J
(Bottom Boot Block) Word L L H XV
ID XLXLLH 22h 5Bh
Byte L L H X 5Bh
Sector Group Protection Verification L L H SA VID XLXLHL X 01h (protected)
X 00h (unprotected)
Secured Silicon Sector In dicator Bit (DQ7) Top
Boot Block LLHXV
ID XLXLHH X 8Eh (factory locked)
0Eh (not factory locked)
Secured Silicon Sector Indicator Bit (DQ7)
Bottom Boot Block LLHXV
ID XLXLHH X 96h (factory locked)
16h (not factory locked)
S29AL008J Top Boot Dev ice Sector/Sector Group Protection
Sector / Sector Block A18 A17 A16 A15 A 14 A13 A12 Sector / Sector Block Size
SA0-SA3 0 0 X X X X X 256 (4x64) Kbytes
SA4-SA7 0 1 X X X X X 256 (4x64) Kbytes
SA8-SA11 1 0 X X X X X 256 (4x64) Kbytes
SA12-SA13 1 1 0 X X X X 128 (2x64) Kbytes
SA14 1110XXX 64 Kbytes
SA15 1111 0XX 32 Kbytes
SA16 1111100 8 Kbytes
SA17 1111101 8 Kbytes
SA18 1111 11X 16 Kbytes
Document Number: 002-00778 Rev. *K Page 14 of 52
S29AL008J
7.11 Temporary Sector Group Unprotect
This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group
Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sector groups can be
programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected
sector groups are protected again. Figure 7.1 shows the algorithm, and Figure 17.11 on page 41 shows the timing diagrams, for this
feature.
Figure 7.1 Temporary Sector Group Unprotect Operation
Notes
1. All protected sector groups unprotected. (If WP# = VIL, the highest or lowest address sector remains protected for uniform sector devices; the top or bottom two
address sectors remains protected for boot sector devices).
2. All previously protected sector groups are protected once again.
S29AL008J Bottom Boot Device Sector/Sector Group Protection
Sector / Sector Block A18 A17 A16 A15 A14 A13 A12 Sector / Sector Block Size
SA0 000000X 16 Kbytes
SA1 0000010 8 Kbytes
SA2 0000011 8 Kbytes
SA3 00001XX 32 Kbytes
SA4 0 0 0 1 X X X 64 Kbytes
SA5-SA6 001XXXX 128 (2x64) Kbytes
SA7-SA10 01XXXXX 256 (4x64) Kbytes
SA11-SA14 10XXXXX 256 (4x64) Kbytes
SA15-SA18 11XXXXX 256 (4x64) Kbytes
START
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sect or Group
Unprotect Completed
(Note 2)
RESET# = VID
(Note 1)
Document Number: 002-00778 Rev. *K Page 15 of 52
S29AL008J
Figure 7.2 In-System Sector Group Protect/Unprotect Algorithms
Sector Group Protect:
Write 60h to sector group
address with
A6 = 0,
A3 = A2 = 0,
A1 = 1, A0 = 0
Set up sector group
address
Wait 150 µs
Verify Sector Group
Protect: Write 40h
to sector group address
with A6 = 0,
A3 = A2 = 0,
A1 = 1, A0 = 0
Read from
sector group address
with A6 = 0,
A3 = A2 = 0,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 μs
First Write
Cycle = 60h?
Data = 01h?
Remove V
ID
from RESET#
Write reset
command
Sector Group
Protect complete
Ye s
Ye s
No
PLSCNT
= 25?
Ye s
Device failed
Increment
PLSCNT
Temporary Sector Group
Unprotect Mode
No
Sector GroupUnprotect:
Write 60h to sector
address with
A6 = 1,
A3 = A2 = 0,
A1 = 1, A0 = 0
Set up first sector
group address
Wait 1.5 ms
Verify Sector Group
Unprotect: Write
40h to sector
address with
A6 = 1,
A3 = A2 = 0,
A1 = 1, A0 = 0
Read from
sector groupaddress
with A6 = 1,
A3 = A2 = 0,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 μs
Data = 00h?
Last sector
group verified?
Remove V
ID
from RESET#
Write reset
command
Sector Group
Unprotect complete
Ye s
No
PLSCNT
= 1000?
Ye s
Device failed
Increment
PLSCNT
Temporary Sector
Group Unprotect
Mode
No All sectors
protected?
Ye s
Protect all sectors:
The indicated portion
of the sector group protect
algorithm must be
performed for all
unprotected sector groups
prior to issuing the
first sector group
unprotect address
Set up
next sector group
address
No
Ye s
No
Ye s
No
No
Ye s
No
Sector Group
Protect Algorithm
Sector Group Unprotect
Algorithm
First Write
Cycle = 60h?
Protect another
sector?
Reset
PLSCNT = 1
Document Number: 002-00778 Rev. *K Page 16 of 52
S29AL008J
8. Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a 256-byte Flash memory region that enables permanent part identification through an
Electronic Serial Number (ESN). The Secured Silicon Sector uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether
or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be
changed, which prevents cloning of a factory-locked part. This ensures the security of the ESN once the product is shipped to the
field.
Spansion offers the device with the Secured Silicon Sector either factory-locked or customer-lockable. The factory-locked version is
always protected when shipped from the factory, and has the Secured Silicon Sector Indicato r Bit permanently set to a 1. The
customer-lockable version is shipped with the Secured Sili con Sector unprotected, allowing customers to utilize the that sector in
any manner they choose. The customer-lockable version has the Secured Silicon Sector Indicator Bit permanently set to a 0. Thus,
the Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory
locked.
The system accesses the Secured Silicon Sector through a command sequence (see Enter Secured Silicon Sector/Exit Secured
Silicon Sector Command Sequence o n page 22). After the system writes the Enter Secured Silicon Sector command sequence, it
may read the Secured Silicon Sector by using the addresses normally occupied by the boot secto rs. Thi s mode of operation
continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On
power-up, or following a hardware reset, the device reverts to sending commands to the boot sectors.
8.1 Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory
In a factory locked device, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon
Sector cannot be modified in any way. The device is available pre-programmed with one of the following:
A random, secure ESN only.
Customer code th rou g h the ExpressFlash service.
Both a random, secure ESN and customer code through the ExpressFlash service.
In devices that have an ESN, a Bottom Boot device has the 16-byte (8-word) ESN in sector 0 at addresses 00000h–0000Fh in byte
mode (or 00000h–00007h in word mode). In the Top Boot device, the ESN is in sector 18 at addresses FFFF0h–FFFFFh in byte
mode (or 7FFF8h–7FFFFh in word mode).
Customers may opt to have their code programmed by Spansion through the Spansion ExpressFlash service. Spansion programs
the customer’s code, with or without the random ESN. The devices are then shipped from the Spansion factory with the Secured
Silicon Sector permanently locked. Contact a Spansion representative for details on using the Spansion ExpressFlash service.
8.2 Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected at the Factory
The customer lockable version allows the Secured Silicon Sector to be programmed once, and then permanently locked after it
ships from Spansion. Note that the un lock bypass functions is not available when programming the Secured Silicon Sector.
The Secured Silicon Sector area can be protected using the following procedures:
Write the three-cycle Enter Secured Silicon Region command sequence, and then follow the in-system sector group protect
algorithm as shown in Figure 7.2 on page 15, substituting the sector group address with the Secured Silicon Sector group address
(A0=0, A1=1, A2=0, A3=1, A4=1, A5=0, A6=0, A7=0). Note that this method is only applicable to the Secured Silicon Sector.
To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in Figure 8.1 on page 17.
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command
sequence to return to reading and writing the remainder of the array.
The Secured Silicon Sector protection must be used wi th caution since, once protected, there is no procedure available for
unprotecting the Secured Silicon Sector area, and none of the bits in th e Secured Silicon Sector memory space can be modified in
any way.
Document Number: 002-00778 Rev. *K Page 17 of 52
S29AL008J
Figure 8. 1 Secured Silicon Sector Protect Verify
9. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, whic h allows
specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-
independent, JEDEC ID-independent, and forw ard- and backward-compati ble for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or
address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses
given in Table to Table on page 19. In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI
data, the system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query
mode, and the system can read CFI data at the addresses given in Table to Table on page 19. The system must write the reset
command to return the device to the autoselect mode.
Write 60h to
any address
Write 40h to SecSi
Sector address
with A0=0, A1=1,
A2=0, A3=1, A4=1,
A5=0, A6=0, A7=0
START
RESET# = VID
Wait 1 ms
Read from SecSi
Sector address
with A0=0, A1=1,
A2=0, A3=1, A4=1,
A5=0, A6=0, A7=0
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove VID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
Document Number: 002-00778 Rev. *K Page 18 of 52
S29AL008J
CFI Query Identification String
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h Query Unique ASCII string “QRY”
13h
14h 26h
28h 0002h
0000h Primary OEM Command Set
15h
16h 2Ah
2Ch 0040h
0000h Address for Primary Extended Table
17h
18h 2Eh
30h 0000h
0000h Alternate OEM Command Set (00h = none exists)
19h
1Ah 32h
34h 0000h
0000h Address for Alternate OEM Extended Table (00h = none exists)
System Interface String
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
1Bh 36h 0027h VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch 38h 0036h VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present)
1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present)
1Fh 3Eh 0003h Typical timeout per single byte/word write 2N µs
20h 40h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h 42h 0009h Typical timeout per individual block erase 2N ms
22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported)
23h 46h 0005h Max. timeout fo r byte/word write 2N times typical
24h 48h 0000h Max. timeout for buffer write 2N times typical
25h 4Ah 0004h Max. timeout per individual block erase 2N times typical
26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not support ed)
Document Number: 002-00778 Rev. *K Page 19 of 52
S29AL008J
Device Geometry Definition
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
27h 4Eh 0014h Device Size = 2N byte
28h
29h 50h
52h 0002h
0000h Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh 54h
56h 0000h
0000h Max. number of byte in multi-byte write = 2N
(00h = not supported )
2Ch 58h 0004h Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0000h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0001h
0000h
0020h
0000h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0080h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
000Eh
0000h
0000h
0001h
Erase Block Region 4 Information
Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h Query-unique ASCII string “PRI”
43h 86h 0031h Major version number, ASCII
44h 88h 0033h Minor version number, ASCII
45h 8Ah 000Ch
Address Sensitive Unlock
0 = Required, 1 = Not Required
Process Tec hn o log y ( Bi ts 5-2)
0011b = 0.11 µm Floating Gate NOR
46h 8Ch 0002h Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h 8Eh 0001h Sector Group Protect
0 = Not Supported, X= Number of sectors in smallest sector group
48h 90h 0001h Sector Group Temporary Unprotect
00 = Not Supported, 01 = Supported
49h 92h 0004h Sector Group Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah 94h 0000h Simultaneous Operation
00 = Not Supported, 01 = Supported
4Bh 96h 0000h Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch 98h 0000h Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Pag e
4Dh 9Ah 0000h ACC (Acceleration) Supply Minimum
00 = Not Supported, D7-D4: Volt, D3-D0: 100mV
4Eh 9Ch 0000h ACC (Acceleration) Supply Maximum
00 = Not Supported, D7-D4: Volt, D3-D0: 100mV
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S29AL008J
9.1 Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent
writes (refer to Table on page 25 for command defin itions). In addition, the following hardware data protection measures prevent
accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
9.1.1 Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down.
The command register and all internal program/er ase circuits are disabled, and the device resets. Subsequent writes are ignored
until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when
VCC is greater than VLKO.
9.1.2 Write Pulse Glitch Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
9.1.3 Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be
a logical zero while OE# is a logical one.
9.1.4 Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal
state machine is a ut om at ica ll y rese t to readi n g array data on power-up.
4Fh 9Eh 00XXh
WP# Protection
00 = Uniform Device withou t WP Protect
01 = Boot Device with TOP and Bottom WP Protect
02 = Bottom Boot Device with WP Protect
03 = Top Boot Device with WP Protect
04 = Uniform Device with Bottom WP Protect
05 = Uniform Device with Top WP Protect
06 = Uniform Device with All Sectors WP Protect
50h A0h 00XXh Program Suspend
00 = Not Supported, 01 = Supported
Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
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S29AL008J
10. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations. Table on page 25
defines the valid register command sequences. Writing incorrect addre ss and data values or writing them in the improper
sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE#
or CE#, whichever happens first. Refer to the appropriate timing diagrams in AC Characteristics on page 35.
10.1 Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device
is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data
using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data.
After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same
exception. See Erase Suspend/Erase Resume Commands on page 24 for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect
mode. See Reset Command on page 21.
See also Requirements for Reading Array Data on page 8 for more information. The Read Operations on page 35 provides the read
parameters, and Figure 17.1 on page 35 shows the timing diag ram.
10.2 Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care for this command.
The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This
resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins.
This resets the device to reading array data (also applies to programming in Erase Suspen d mode). Once programming begins,
however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect
mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspen d).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (als o
applies during Erase Suspend).
10.3 Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether
or not a sector is protected. Table on pa ge 25 shows the address and data requirements. This method is an alternative to that
shown in Table on page 13, which is intended for PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then
enters the autoselect mode, and the system may read at any address any number of times, without initiating another command
sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h returns the device code. A read
cycle containing a sector address (SA) and the address 02h in word mode (or 04h in byte mode) returns 01h if that sector is
protected, or 00h if it is unprotected. Refer to Table on page 11 and Table on page 12 for valid sector addresses.
The system must write the reset command to exit the autoselect mode and return to reading array data.
Document Number: 002-00778 Rev. *K Page 22 of 52
S29AL008J
10.4 Enter Secured Silicon Sector/Exit Secure d Silicon Sector
Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, sixteen-byte electronic serial number (ESN).
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command
sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured
Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation.
Table on page 25 shows the addresses and data requirements for both command sequences. Note that the unlock bypass mode is
not available when the device enters the Secured Silicon Sector. See also Secured Silicon Sector Flash Memory Region on
page 16 for further information.
10.5 Word/Byte Program Command Sequence
The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle
operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up
command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is
not required to provide further controls or timings. The device automatica lly generates the program pulse s and verifies the
programmed cell margin. Table on page 25 shows the address and data requirements for the byte program command sequence .
When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer
latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. See Write Operation Status
on page 27 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately
terminates the programming operation. The Byte Program command sequence should be reinitiated once the device has reset to
reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector boun daries. A bit cannot be pro grammed from a 0 back to a 1.
Attempting to do so may halt the operation and set DQ5 to 1, or cause the Data# Polling algo rithm to indicate the operation was
successful. However, a succeeding read will show that the data is sti ll 0. Only erase operations can convert a 0 to a 1.
10.6 Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the device faster than using the standard program
command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a thi rd
write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock
bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the
unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial tw o unlock cycles required in the standard program command sequence,
resulting in faster total programming time. Table on page 25 sh ows the requirements for the comma nd sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock
bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are don’t care for both cycles. The device then returns to reading array data.
Figure 1 0.1 on page 23 illustrate s the algorithm for the program operation. See Erase/Program Operations on page 38 for
parameters, and to Figure 17.5 on page 38 for timing diagrams.
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S29AL008J
Figure 10.1 Program Operation
Note
See Table on page 25 for program command sequence.
10.7 Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a
set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the
Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these operations. Table on page 25 shows the address and data requirements for
the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignore d. Note that a hardware reset during the chip
erase operation immediately terminate s the operation. The Chip Erase command sequence should be reinitiated once the device
has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See Write Operation Status
on page 27 for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched.
Figure 10.2 on page 25 illustrates the algorithm for the erase operation. See Erase/Program Operations on page 38 for parameters,
and Figure 17.6 on page 39 for timing diagrams.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data? No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
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S29AL008J
10.8 Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by
a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector
erase command. Table on page 25 shows the address and data requirements for the sector erase command sequence.
The device does not requ ire the system to preprogram the memory prior to erase. The Embedded Erase alg orithm automaticall y
programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period, additional sector
addresses and sector erase commands may be written. However, these additional erase commands are only one bus cycle long
and should be identical to the sixth cycle of the standard erase command explained above. Loading the sector erase buffer may be
done in any sequence, and the number of sectors may be from one secto r to all sectors. The time between these additional cycles
must be less than 50 µs, otherwise the last address and command might not be accepte d, and erasure may begin. It is
recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be
re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed
to be less than 50 µs, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional
sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out. (See DQ3: Sector Erase Timer on page 31.) The
time-out begins from the rising edge of the final WE# pulse in the command sequen ce.
Once the sector erase operation has begun, only the Erase Suspend command is valid . A ll other commands are ignored. Note that
a hardware reset during the sector erase operation immediately terminates the operation. The Sector Erase command sequence
should be reinitiated once the device has returned to reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading array data and ad dresses are no longer latched.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to Write Operation Status
on page 27 for information on these status bits. )
Figure 1 0.2 on page 25 illustrate s the algorithm for the erase operation. Refer to Erase/Program Operations on page 38 for
parameters, and to Figure 17.6 on page 39 for timing diagrams.
10.9 Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to,
any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out
period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase
operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately
terminates the time-out period and suspends the erase op eration. Addresses are don’t-cares when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 35 µs to suspend
the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends the erase ope ration.
After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for
erasure. (The device “erase suspends” all sectors selected fo r erasure.) Normal read and write timings and command definitions
apply. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See Write Operation Status on page 27
for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data within non-suspended
sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See Write Operation Status on page 27 for more information.
The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows
reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See
Autoselect Command Sequence on page 21 for more information.
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The system must write the Erase Resume command (address bits are don’t care) to exit the erase suspend mode and continue the
sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after
the device has resumed erasing.
Figure 10.2 Erase Operation
Notes
1. See Table on page 25 for erase command sequence.
2. See DQ3: Sector Erase Timer on page 31 for more information.
10.10 Command Definitions Table
S29AL008J Command Definitions
Command
Sequence
(Note 1)
Cycles
Bus Cycles (Notes 2–5)
First Second Third Fourth Fifth Sixth
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 6) 1RARD
Reset (Note 7) 1 XXX F0
Autoselect (Note 8)
Manufacturer ID Word 4555 AA 2AA 55 555 90 X00 01
Byte AAA 555 AAA
Device ID,
Top Boot Block Word 4555 AA 2AA 55 555 90 X01 22DA
Byte AAA 555 AAA X02 DA
Device ID,
Bottom Boot Block Word 4555 AA 2AA 55 555 90 X01 225B
Byte AAA 555 AAA X02 5B
Sector Group Protect Verify
(Note 9)
Word
4
555
AA
2AA
55
555
90
(SA)
X02 XX00
XX01
Byte AAA 555 AAA (SA)
X04 00
01
Enter Secured Silicon Sector Word 3555 AA 2AA 55 555 88
Byte AAA 555 AAA
Exit Secured Silicon Sector Word 4555 AA 2AA 55 555 90 XXX 00
Byte AAA 555 AAA
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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Legend
Notes
CFI Query (Note 10) Word 155 98
Byte AA
Program Word 4555 AA 2AA 55 555 A0 PA PD
Byte AAA 555 AAA
Unlock Bypass Word 3555 AA 2AA 55 555 20
Byte AAA 555 AAA
Unlock Bypass Program (Note 11) 2 XXX A0 PA PD
Unlock Bypass Reset (Note 12) 2 XXX 90 XXX 00
Chip Erase Word 6555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Byte AAA 555 AAA AAA 555 AAA
Sector Erase (Note 15) Word 6555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30
Byte AAA 555 AAA AAA 555
Erase Suspend (Note 13) 1 XXX B0
Erase Resume (Note 14) 1 XXX 30
X = Don’t care
RA = Address of the memory location to be read
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in auto select mode) or erased.
Address bits A18–A12 uniquely select any sector.
1. See Table on page 8 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect command
sequence, all bus cycles are write cycles.
4. Data bit s DQ15 –DQ8 are don’t cares for unlock and command cycles.
5. Address bits A1 8–A11 are don’t cares for unlock and command cycles,
unless SA or PA required.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device
is in the autoselect mode, or if DQ5 goes high (while the device is providing
status data).
8. The fourth cycle of the autoselect command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector . See
“Autoselect Command Sequence” for more information.
10.Command is valid when device is ready to read array data or when device is
in autoselect mode.
11. The Unlock Bypass command is required prior to the Unlock Bypass
Program command.
12.The Unlock Bypass Reset command is required to return to readin g array
data when the device is in the unlock bypass mode. F0 is also acceptable.
13.The system may read and program in non-erasing sectors, or enter the
autoselect mode, when in the Erase Suspend mode. The Erase Suspend
command is valid only during a sector erase operation.
14.The Erase Resume command is valid only during the Erase Suspend mode.
15.Additional sector erase commands during the time-o ut period after an initial
sector erase are one cycle long and identical to the sixt h cycle of the sector
erase command sequence (SA / 30).
S29AL008J Command Definitions
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S29AL008J
11 . Write Operation Status
The device provides several bits to dete rmine the status of a write operation: DQ2, DQ3, DQ5 , DQ6 , DQ7, and RY/BY# . Table
on page 31 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method for
determining whether a prog ram or erase operation is complete or in progress. These three bits are discussed first.
11.1 DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether
the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the program or erase command
sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7
status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs
the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program
address fall s wi th i n a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to reading
array data.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if
the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7. This is analogous to the complement/true datum
output described for the Embedded Program alg orithm: the erase function changes all the bits in a sector to 1; prior to this, the
device outputs the complement, or 0. The system must provide an address within any of the sectors selected for erasure to read
valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Poll ing on DQ7 is active for
approximately 100 µs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ7–DQ0 on the following
read cycles. This is because DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low.
Figure 1 7.8 on page 40, illustrates this.
Table on page 31 shows the outputs for Data # Po ll i n g on DQ 7. Figure 11.2 on page 30 shows the Data# Polling algorithm.
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Figure 11.1 Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultane ously with DQ5.
11.2 RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The
RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output,
several RY/BY# pins can be tied togethe r in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.)
If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby
mode.
Table on page 31 shows the outputs for RY/BY#. Figures Figure 17.1 on page 35, Figure 17.2 on page 36, Figure 17.5 on page 38
and Figure 17.6 on page 39 shows RY/BY# for read, reset, program, and erase operations, respectively.
DQ7 = Data? Yes
No
No
DQ5 = 1?
No
Yes
Yes
FAIL PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
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11.3 DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Era s e algorithm is in progress or complete, or whether the device
has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE#
pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successi ve read cycles to any address cause DQ6 to toggle. (The
system may use either OE# or CE# to control the read cycles.) When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs,
then returns to reading array data. If not all selected sectors are protected, the Embedded Eras e algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the
device is actively erasing (that is, the Embedded Erase algorithm is in progre ss), DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-
suspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 27).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is
written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete.
Table on page 31 shows the outputs for Toggle Bit I on DQ6. Figure 11.2 on page 30 shows the toggle bit algorithm in flowchart
form, and Reading Toggle Bits DQ6/DQ2 on page 30 explains the algorithm. Figure 17.9 on p age 40 shows the toggle bit timin g
diagrams. Figure 17.10 on page 40 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on
DQ2: Toggle Bit II on pag e 29.
11.4 DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded
Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE#
pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use
either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-
suspended. DQ6, by comparison, indicates whether the device is active ly er asing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table
on page 31 to compare outputs for DQ2 and DQ6.
Figure 11.2 on page 30 shows the toggle bit algorithm in flowchart form, and the section Reading Toggle Bits DQ6/DQ2 on page 30
explains the algorithm. See also the DQ6: Toggle Bit I on page 29 subsection. Figure 17.9 on page 40 shows th e toggle bit timing
diagram. Figure 17.10 on page 40 shows the differences between DQ2 and DQ6 in graphical form.
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11.5 Reading Toggle Bits DQ6/DQ2
Refer to Figure 11.2 on page 30 for the following discussion. Whenever the system initially begins reading toggle bit status, it must
read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typical ly , the system would note and store the
value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, th e device has completed the program or erase operation. T he system can read array data on
DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note
whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has
successfully completed the program or erase operation . If it is still togglin g, the device did not complete the operation successfully,
and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system
may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the operation (top of Figure 11.2 on page 30).
Figure 11.2 Toggle Bit Algorithm
Notes
1. Read toggle bit twice to determine whether or not it is toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5 changes to 1. See text.
START
No
Ye s
Ye s
DQ5 = 1?
No
Ye s
Toggle Bit
= Toggle?
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle?
Read DQ7–DQ0
Tw i c e
Read DQ7–DQ0
(Note 1)
(Notes 1, 2)
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S29AL008J
11.6 DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pul se count limit. Under these conditions DQ5
produces a 1. This is a failure condition that indicates the program or erase cycle was not successfully completed.
The DQ5 failure condition may appear if the system tries to program a 1 to a location that is previously programmed to 0. Only an
erase operation can change a 0 back to a 1. Under this condition, the device halts the operation, and when the operation ha s
exceeded the timing limits, DQ5 produces a 1.
Under both these conditions, the system must issue the reset comma nd to return the device to reading array data.
11.7 DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation has
begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire
time-out also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from 0 to 1. The
system may ignore D Q3 if the system can gua ran tee th at the ti me between addi tional sector erase commands will always be less
than 50 s. See also Sector Era s e Command Sequence on page 24.
After the sector erase command sequence is written, the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit
I) to ensure the device has accepted the command sequence, and then read DQ3 . If DQ3 is 1, the internally controlled erase cycle
has begun; all further commands (other than Erase Suspend) are ignored until the erase operation is comple te. If DQ3 is 0, the
device will accept additional sector erase commands. To ensure the command has been accepted, the system software should
check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check,
the last command might not have been accepted. Table shows the outputs for DQ3.
Notes
1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See DQ5: Exceeded Timing Limits
on page 31 for more information.
2. DQ7 and DQ2 require a valid address when reading st atus information. Refer to the appropriate subsection for fu rther details.
Write Operation Status
Operation DQ7
(Note 2) DQ6 DQ5
(Note 1) DQ3 DQ2
(Note 2) RY/BY#
Standard
Mode Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0
Embedded Erase Algorithm 0 Toggle 0 1 Toggle 0
Erase
Suspend
Mode
Reading within Erase
Suspended Sector 1 No toggle 0 N/A Toggle 1
Readin g w i thin Non-Erase
Suspended Sector Data Data Data Data Data 1
Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0
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S29AL008J
12. Absolute Maximum Ratings
Notes
1. Minimum DC voltage on input o r I/O pi ns is –0.5 V. During voltage transitions, in put or I /O pins may over shoot VSS to –2.0 V for periods of up to 20 ns. See Figure 13.1
on page 32. Maximum DC volt age on input or I /O pins is VCC +0.5 V. During voltage t ransiti ons, inp ut or I/O pins may oversho ot to V CC +2.0 V fo r periods up t o 20 ns.
See Figure 13.2 on page 32.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to –2.0 V for periods of up
to 20 ns. See Figure 13.1 on page 32. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be grea ter than one second.
4. Stresses above those listed unde r Absolute Maximum Ratings may cause permanent dama ge to the device. This is a stress rating only; functional operation of the
device at these or any o ther conditi ons abov e those indicat ed in the operat ional secti ons of this d ata sheet is n ot implie d. Ex posure of the device to absolute maximum
rating conditions for extended periods may affect device reliability.
13. Operating Ranges
Note
Operating ranges define those limits between wh ich the functionality of the device is guaranteed.
Figure 13.1 Maximum Negative Overshoot Waveform
Figure 13.2 Maximum Positive Overshoot Waveform
Parameter Rating
Storage Temperature Plastic Packages –65C to +150C
Ambient Temperature with Power Applied –65C to +125C
Voltage with Respect to Ground
VCC (Note 1) –0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2) –0.5 V to +12.5 V
All other pins (Note 1) –0.5 V to VCC+0.5 V
Output Short Circuit Curren t (Note 3) 200 mA
Parameter Range
Ambient Temperature Industrial (I) Devices –40C to +85C
Extended (N) Devices –40°C to +125°C
VCC Supply Voltages Full 2.7 V to 3.6 V
Regulated 3.0 V to 3.6 V
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
VCC
+2.0 V
VCC
+0.5 V
20 ns
2.0 V
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S29AL008J
14. DC Characteristics
14.1 CMOS Compatible
Notes
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
4. Not 100% tested.
5. When device operated in Extended Temperature range, the currents shall be as follows:
ICC3 = 0.2 µA (typ), 10 µA (max)
ICC4 = 0.2 µA (typ), 10 µA (max)
ICC5 = 0.2 µA (typ), 10 µA (max)
Parameter Description Test Conditions Min Typ Max Unit
ILI Input Load Current VIN = VSS to VCC, VCC = VCC max 1.0
µA
WP# Input Load Current VCC = VCC max, WP# = VSS to VCC 25
ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V 35
ILO Output Leakage Current VOUT = VSS to VCC,
VCC = VCC max 1.0
ICC1 VCC Active Read Current
(Note 1)
CE# = VIL, OE# = VIH,
VCC = VCC max, Byte Mode 5 MHz 7 12
mA
1 MHz 2 4
CE# = VIL, OE# = VIH,,
VCC = VCC max, Word Mode 5 M H z 7 12
1 MHz 2 4
ICC2 VCC Active Erase/Program Current
(Notes 2, 3, 4)CE# = VIL, OE# = VIH,
VCC = VCC max 20 30 mA
ICC3 VCC Standb y Current (Note 4)
OE# = VIH,
CE#, RESET# = VCC 0.3 V/-0.1V,
WP# = VCC or open, VCC = VCC max
(Note 5)
0.2 5 µA
ICC4 VCC Standby Current During Reset
(Note 4)
VCC = VCC max;
RESET# = VSS 0.3 V/-0.1V
WP# = VCC or open, (Note 5) 0.2 5 µA
ICC5 Automatic Sleep Mode
(Notes 3, 4)
VCC = VCC max, VIH = VCC 0.3 V,
VIL = VSS 0.3 V/-0.1 V,
WP# = VCC or open, (Note 5) 0.2 5 µA
VIL Input Low Voltage -0.1 0.8
V
VIH Input High Voltage 0.7 x VCC VCC + 0.3
VID Volta ge for Aut oselect and Temporary
Sector Unprote ct VCC = 2.7–3.6 V 8.5 12.5
VOL Output Low Voltage IOL = 4.0 mA, VCC = VCC min 0.45
VOH1 Output High Voltage IOH = -2.0 mA, VCC = VCC min 0.85 x VCC
VOH2 IOH = -100 µA, VCC = VCC min V
CC–0.4
VLKO Low VCC Lock-Out Voltage 2.1 2.5
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S29AL008J
15. Test Conditions
Figure 15.1 Test Setup
Note
Diodes are IN3064 or equivalent.
16. Key to Switching Waveforms
Figure 16.1 Input Waveforms and Measu r ement Levels
Test Specifications
Test Condition 70 55 Unit
Output Load 1 TTL gate
Output Load Capacitance, CL
(including jig capacitance) 30 pF
Input Rise and Fall Times 5ns
Input Pulse Levels 0.0 or VCC
VInput timing measurement reference levels 0.5 VCC
Output timing measurement reference levels 0.5 VCC
Waveform Inputs Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted Changing, State Unknown
Does Not Apply Center Line is High Impedance State (High Z)
2.7 k
CL6.2 k
3.3 V
Device
Under
Test
V
CC
0.0 V 0.5 VCC OutputMeasurement LevelInput 0.5 VCC
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S29AL008J
17. AC Characteristics
17.1 Read Operations
Notes
1. Not 100% tested.
2. See Figure 15.1 on page 34 and Table on page 34 for test specifications.
Figure 17.1 Read Operations Timings
Parameter
Description
Speed Options
JEDEC Std Test Setup 55 70 Unit
tAVAV tRC Read Cycle Time (Note 1) Min 55 70
ns
tAVQV tACC Address to Output Delay CE# = VIL
OE# = VIL Max 55 70
tELQV tCE Chip Enable to Output Delay OE# = VIL Max 55 70
tGLQV tOE Output Enable to Output Delay Max 30 30
tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 16
tGHQZ tDF Output Enable to Output High Z (Note 1) Max 16
tSR/W Latency Between Read and Write Operations Min 20
tOEH Output Enable
Hold Ti me (Note 1)
Read Min 0
Toggle and
Data# Polling Min 10
tAXQX tOH Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1) Min 0
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tOE
0 V
RY/BY#
RESET#
tDF
tSR/W
tOH
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S29AL008J
17.2 Hardware Reset (RESET#)
Note
Not 100% tested .
Figure 17.2 RESET# Timings
Note
1. CE# should only go low after RESET# has gone high. Keeping CE# low from power up through the first read could cause the first read to retrieve erroneous data.
Parameter
Description All Speed OptionsJEDEC Std Test Setup Unit
tREADY RESET# Pin Low (During Embedded Algorithms) to
Read or Write (See Note) Max 35 µs
tREADY RESET# Pin Low (NOT During Embedded Algor ithms) to
Read or Write (See Note) Max 500
ns
tRP RESET# Pulse Width
Min
500
tRH RESET# High Time Before Read (See Note) 50
tRPD RESET# Low to Standby Mode 35 µs
tRB RY/BY# Re covery Time 0 ns
RESET#
RY/BY#
RY/BY#
tRP
tReady
Reset Timings NOT during Embedded Algorithms (Note 1)
tReady
CE#, OE#
tRH
CE#, OE#
Reset Timings during Embedded Algorithms
RESET#
tRP
tRB
Document Number: 002-00778 Rev. *K Page 37 of 52
S29AL008J
17.3 Word/Byte Configuration (BYTE#)
Figure 17.3 BYTE# Timings for Read Operations
Figure 17.4 BYTE# Timings for Write Operations
Note
Refer to the Erase/Program Operations table for tAS and tAH specifications.
Parameter Speed Options
JEDEC Std Description 55 70 Unit
tELFL/tELFH CE# to BYTE# Switching Low or High Max 5
nstFLQZ BYTE# Switching Low to Output HIGH Z Max 16
tFHQV BYTE# Switching High to Output Active Min 55 70
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
tELFL
DQ0–DQ14 Data Output
(DQ0–DQ14)
DQ15/A-1 Address
Input
tFLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
tELFH
DQ0–DQ14 Data Output
(DQ0–DQ14)
DQ15/A-1 Address
Input
tFHQV
BYTE#
Switching
from byte to
word mode
CE#
WE#
BYTE#
The falling edge of the last WE# signal
tHOLD (tAH)
tSET
(tAS)
Document Number: 002-00778 Rev. *K Page 38 of 52
S29AL008J
17.4 Erase/Program Operations
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 43 for more information.
Figure 17.5 Program Operation T imings
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Parameter
Description
Speed Options
JEDEC Std 55 70 Unit
tAVAV tWC Write Cycle Time (Note 1) Min 55 70 ns
tAVWL tAS Address Setup Time Min 0 ns
tWLAX tAH Address Hold Time Min 45 ns
tDVWH tDS Data Setup Time Min 35 35 ns
tWHDX tDH Data Hold Time Min 0 ns
tOES Output Enable Setup Time Min 0 ns
tGHWL tGHWL Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tELWL tCS CE# Setup Time Min 0 ns
tWHEH tCH CE# Hold Time Min 0 ns
tWLWH tWP Write Pulse Width Min 35 35 ns
tWHWL tWPH Write Pulse Width High Min 25 ns
tSR/W Latency Between Read and Write Operations Min 20 ns
tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 6 µs
Word Typ 6
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec
tVCS VCC Setup Time (Note 1) Min 50 µs
tRB Recovery Time from RY/BY# Min 0 ns
tBUSY Program/Erase Valid to RY/BY# Delay Max 90
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
tAH
tDH
tWP
PD
tWHWH1
tWC tAS
tWPH
tVCS
555h PA PA
Read Status Data (last two cycles)
A0h
tCS
Status DOUT
Program Command Sequence (last two cycles)
RY/BY#
tRB
t
BUSY
tCH
PA
Document Number: 002-00778 Rev. *K Page 39 of 52
S29AL008J
Figure 17.6 Chip/Sector Erase Operation Timings
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 27).
2. Illustration shows device in word mode.
Figure 17.7 Back to Back Read/Write Cycle Timing
OE#
CE#
Addresses
VCC
WE#
Data
2AAh SA
tAH
tWP
tWC tAS
tWPH
555h for chip erase
10 for Chip Erase
30h
tDS
tVCS
tCS
tDH
55h
tCH
In
Progress Complete
tWHWH2
VA
VA
Erase Command Sequence (last two cycles) Read Status Data
RY/BY#
tRB
tBUSY
OE#
CE#
WE#
Addresses
tOH
Data Valid
In
Valid
In
Valid PA Valid RA
tWC
tWPH
tAH
tWP
tDS
tDH
tRC
tCE
Valid
Out
tOE
tACC
tOEH tGHWL
tDF
Valid
In
CE# Controlled Write CyclesWE# Controlled Write Cycle
Valid PA Valid PA
tCP
tCPH
tWC tWC
Read Cycle
tSR/W
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S29AL008J
Figure 17.8 Data# Polling Timings (During Embe dded Algorithms)
Note
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 17.9 Toggle Bit Timings (During Embedded Algorithms)
Note
VA = Valid address; not required for DQ6. Illustration shows fir s t two status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 17.10 D Q2 vs. DQ6 for Erase and Erase Suspend Opera tions
Note
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector.
WE#
CE#
OE#
High Z
tOE
High Z
DQ7
DQ0–DQ6
RY/BY#
tBUSY
Complement True
Addresses VA
tOEH
tCE
tCH
tOH
tDF
VA VA
Status Data
Complement
Status Data True
Valid Data
Valid Data
tACC
tRC
WE#
CE#
OE#
High Z
tOE
DQ6/DQ2
RY/BY#
tBUSY
Addresses VA
tOEH
tCE
tCH
tOH
tDF
VA VA
tACC
tRC
Valid DataValid StatusValid Status
(first read) (second read) (stops toggling)
Valid Status
VA
Enter
Erase
Erase
Erase
Enter Erase
Suspend Program
Erase Suspend
Read Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Suspend
Program
Resume
Embedded
Erasing
Document Number: 002-00778 Rev. *K Page 41 of 52
S29AL008J
17.5 Temporary Sector Group Unprotect
Note
Not 100% tested .
Figure 17.11 Temporary Sector Group Unprotect/Timing Diagram
Figure 17.12 Sector Group Protect/Unprotect Timing Diagram
Note
For sector group protect , A6 = 0, A3 = A2 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A3 = A2 = 0, A1 = 1, A0 = 0.
Parameter
All Speed OptionsJEDEC Std Description Unit
tVIDR VID Rise and Fall Time (See Note) Min 500 ns
tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 µs
tRRB RESET# Hold Time from RY/BY# High for Temporary
Sector Unprotect Min 4 µs
RESET#
t
VIDR
12V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
t
RRB
0 or 3V
Sector Group Protect: 150 µs
Sector Group Unprotect: 1.5 ms
1 µs
RESET#
SA, A6, A3, A2
A1, A0
Data
CE#
WE#
OE#
60h 60h 40h
Valid* Valid* Valid*
Status
Sector Group Protect/Unprotect Verify
V
ID
V
IH
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S29AL008J
17.6 Alternate CE# Controlled Erase/Program Operations
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 43 for more information.
Parameter Speed Options
JEDEC Std Description 55 70 Unit
tAVAV tWC Write Cycle Time (Note 1) Min 55 70 ns
tAVEL tAS Address Setup Time Min 0 ns
tELAX tAH Addr ess Hold Time Min 45 ns
tDVEH tDS Data Setup Time Min 35 35 ns
tEHDX tDH Data Hold Time Min 0 ns
tOES Output Enable Setup Time Min 0 ns
tGHEL tGHEL Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tWLEL tWS WE# Setup Time Min 0 ns
tEHWH tWH WE# Hold Time Min 0 ns
tELEH tCP CE# Pulse Width Min 35 35 ns
tEHEL tCPH CE# Pulse Width High Min 25 ns
tSR/W Latency Between Read and Wr ite Operations Min 20 ns
tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 6 µs
Word Typ 6
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec
Document Number: 002-00778 Rev. *K Page 43 of 52
S29AL008J
Figure 17.13 Alternate CE# Controlled Write Operatio n Timings
Notes
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
18. Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditio ns: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard data p attern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is consider ably less than the maximum chip prog ramming time list ed, since most bytes program faster th an th e maxi mum progr am
times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time require d to execute the two- or four -bus-cycle seque nce for the program command. See Table on page 25 for further information on
command definitions.
6. The device has a minimum erase and program cycle endur ance of 100,000 cycles per sector.
Parameter Typ (Note 1) Max (Note 2) Unit Comments
Sector Erase Time 0.5 10 s Excludes 00h programming
prior to erasure (Note 4)
Chip Erase T ime 10 s
Byte Programming Time 6 150 µs
Excludes system level
overhead (Note 5)
Word Programming Time 6 150 µs
Chip Programming Time Byte Mode 6.3 80 s
Word Mode 3.2 60 s
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7# D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase PA for program
SA for sector erase
555 for chip erase
t
BUSY
Document Number: 002-00778 Rev. *K Page 44 of 52
S29AL008J
19. TSOP and BGA Pin Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter Symbol Parameter Description Test Setup Package Typ Max Unit
CIN Input Capacitance VIN = 0 TSOP 4 6
pF
BGA 4 6
COUT Output Capacitance VOUT = 0 TSOP 4.5 5.5
BGA 4.5 5.5
CIN2 Control Pin Capacitance VIN = 0 TSOP 5 6.5
BGA 5 6.5
CIN3 WP# Pin Capacitance VIN = 0 TSOP 8.5 10
BGA 8.5 10
Document Number: 002-00778 Rev. *K Page 45 of 52
S29AL008J
20. Physical Dimensions
20.1 TS 048—48-Pin Standard TSOP
Note
For reference only. BSC is an ANSI standard for Basic Space Centering.
3664 \ f16-038.10 \ 11.6.7
PACKAGE TS/TSR 48
JEDEC MO-142 (D) DD
SYMBOL MIN NOM MAX
A --- --- 1.20
A1 0.05 --- 0.15
A2 0.95 1.00 1.05
b1 0.17 0.20 0.23
b 0.17 0.22 0.27
c1 0.10 --- 0.16
c 0.10 --- 0.21
D 19.80 20.00 20.20
D1 18.30 18.40 18.50
E 11.90 12.00 12.10
e 0.50 BASIC
L 0.50 0.60 0.70
Θ0˚ --- 8
R 0.08 --- 0.20
N48
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORM TO ANSI Y14.5M-1982)
2. PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3. PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN): INK OR LASER MARK.
4. TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS
ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
5. DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD
PROTUSION IS 0.15mm (.0059") PER SIDE.
6. DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR
PROTUSION SHALL BE 0.08mm (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX.
MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT
LEAD TO BE 0.07mm (0.0028").
7. THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10mm (.0039") AND 0.25mm (0.0098") FROM THE LEAD TIP.
8. LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM
THE SEATING PLANE.
9. DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
Document Number: 002-00778 Rev. *K Page 46 of 52
S29AL008J
20.2 VBK048—48-Ball Fine-Pitch Ball Grid Array (BGA) 8.15 mm x 6.15 mm
3338 \ 16-038.25
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEP
T
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
SIDE VIEW
TOP VIEW
SEATING PLANE
A2
A
(4X)
0.10
10
D
E
C0.10
A1
C
B
A
C0.08
BOTTOM VIEW
A1 CORNE
R
BA
M
φ 0.15 C
M
7
7
6
eSE
SD
6
5
4
3
2
A
BCDEFG
1
H
φb
E1
D1
C
φ 0.08
PIN A1
CORNER
INDEX MARK
PACKAGE VBK 048
JEDEC N/A
8.15 mm x 6.15 mm NOM
PACKAGE
SYMBOL MIN NOM MAX NOTE
A --- --- 1.00 OVERALL THICKNESS
A1 0.18 --- --- BALL HEIGHT
A2 0.62 --- 0.76 BODY THICKNESS
D 8.15 BSC. BODY SIZE
E 6.15 BSC. BODY SIZE
D1 5.60 BSC. BALL FOOTPRINT
E1 4.00 BSC. BALL FOOTPRINT
MD 8 ROW MATRIX SIZE D DIRECTION
ME 6 ROW MATRIX SIZE E DIRECTION
N 48 TOTAL BALL COUNT
φb 0.35 --- 0.43 BALL DIAMETER
e 0.80 BSC. BALL PITCH
SD / SE 0.40 BSC. SOLDER BALL PLACEMENT
--- DEPOPULATED SOLDER BALLS
Document Number: 002-00778 Rev. *K Page 47 of 52
S29AL008J
21. Revision History
Spansion Publication Number: S29AL008J_00
Section Description
Revision 01 (July 26, 2007)
Initial release.
Revision 02 (October 29, 2007)
Distinctive Characteristics Corrected number of 64 Kbyte / 32 Kword sectors
Global Removed 44-pin SOP package
Orderin g Info r m a tio n Removed all leaded package offerings
S29AL008J Device Bus Operations Table Under Note 3: Removed the line “If WP# = VHH, all sectors will be unprote cted.”
CFI Query Identification String Table Updated the data for CFI addresses 2C hex & 39 hex
S29AL008J Command Definitions Table The 2nd cycle data for the “Unlock Bypass Reset” command was updated from 'F0' to '00'.
Absolute Maximum Ratings Updated VCC Absolute Maximum Rating
CMOS Compatible Table
Updated ICC3 Standby current test condition
Updated maximum value of VOL
Updated minimum value of VLKO
Figure Back to Back Read/Write Cycle Timing Corrected the tSR/W duration
Revision 03 (March 27, 2008)
Reset #: Hardware Reset Pin Updated current consumption during RESET# pulse
CMOS Compatible Table
Updated maximum value of ILI
Updated test condition, typical and maximum value of Icc3
Updated test condition, typical and maximum value of Icc4
Updated test condition, typical and maximum value of Icc5
Updated minimum value of VIL
Added Note 5
Orderin g Info r m a tio n Updated valid combination
• Removed 45 ns, added 70 ns
Revision 04 (May 23, 2008)
Global Removed fortified BGA package option
Orderin g Info r m a tio n
Added the Regulated Voltage option
Added the Extended Temperature Range
Updated the Valid Combination table
Pin Configuration Updated Pin Configuration table
Device Bus Operation Updated the S29AL008J Device Bus Operation table and modified Note 3
Operating Ranges Added Extended Temperature Range information
Added Regulated Voltage
Revision 05 (August 12, 2008)
Sector Protection/Unprotection Title changed to Sector Group Protection and Unprotection
Section amended and restated to Sector Group Protection and Unprotection
Temporary Sector Unprotect
Title changed to Temporary Sector Group Unprotect
Figure 7.1; Title changed to Temporary Sector Group Unprotect Operation
Figure 7.2; Title changed to In-System Sector Protect/Unprotect Algorithms
Temporary Sector Unprotect
Title changed to Temporary Sector Group Unprotect
Figure 17.11; Title changed to Temporary Sector Group Unprotect/Timing Diagram
Figure 17.12; Sector Group Protect/Unprotect Timing Diagram
Document Number: 002-00778 Rev. *K Page 48 of 52
S29AL008J
Reading Toggle Bits DQ6/DQ2 Updated Figure 11.2
Orderin g Info r m a tio n Added SSOP56 package option
Updated the Valid Combination table
Connection Diagrams Added 56-pin Shrink Small Outline Package (SSOP56)
Physical Dimensions Added 56-pin Shrink Small Outline Package (SSOP56)
Alternate CE# Controlled Erase/Program
Operations TDS value changed from 45 ns to 35 ns
Erase/Program Operation Added figure Toggle Bit Timing (During Embedded Algorithm)
Product Selector Guide Updated Table
Revision 06 (October 29, 2008)
Customer Lockable: Secured Silicon
Sector Programmed and Protected at
the Factory
Modified first bullet
Updated figure Secured Silicon Sector Protect Verify
TSOP and Pin Capacitance Updated Table
Revision 07 (February 3, 2009)
Ordering Information Updated the Valid Combination table
Erase/Program Operation Updated Table
Removed Figure Toggle Bit Timing (During Embedded Algorithm)
Erase and Programming Performance Updated Table
Revision 08 (July 9, 2009)
General Corrected minor typos
Physical Dimensions Updated TS048
Customer Lockable: Secured Silicon
Sector NOT Programmed and
Protected at the Factory Modified first bullet
Erase and Programming Performance Updated Table
Revision 09 (February 23, 2010)
Sector Erase Command Sequence Added clarification regarding additional sector erase commads during time-out period
Command Definitions Table Added Note 15 to clarify additional sector erase commands during time-out period
Revision 10 (December 9, 2011)
Ordering Information Added Low-Halogen 48-ball BGA ordering option
RESET#: Hardware Reset Pin Added sentence regarding use of CE# with RESET#
RESET# Timings Figure Added note
Revision 11 (April 12, 2012)
Global Removed SSOP-56
Document History Page
Document Title:S29AL008J 8 Mbit (1 M x 8-Bit/512 K x 16-Bit), 3 V, Boot Sector Flash
Document Number: 002-00778
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
** - RYSU 06/26/2007 Initial releas e
Section Description
Document Number: 002-00778 Rev. *K Page 49 of 52
S29AL008J
*A - RYSU 10/29/2007 Distinctive Characteris tics Corrected number of 64 Kbyte / 32 Kword
sectors
Global Removed 44-pin SOP package
Ordering Information Removed all leaded package offerings
S29AL008J Device Bus Operations Table Unde r No te 3: Removed the
line “If WP# = VHH, all sectors will be unprotected.”
CFI Query Identification String Table Updated the data for CFI
addresses 2C hex & 39 hex
S29AL008J Command Definitions Table The 2nd cycle data for the
“Unlock Bypass Reset” command was updated from 'F0' to '00' .
Absolute Maximum Ratings Updated VCC Absolute Maximum Rating
CMOS Compatible Table
Updated ICC3 Standby current test condition
Updated maximum value of VOL
Updated minimum value of VLKO
Figure Back to Back Read/Write Cycle Timing Corrected the tSR/W
duration
*B - RYSU 03/27/2008 Reset #: Hardware Reset Pin Updated current consumption during
RESET# pulse
CMOS Compatible Table
Updated maximum value of ILI
Updated test condition, typical and maximum value of Icc3
Updated test condition, typical and maximum value of Icc4
Updated test condition, typical and maximum value of Icc5
Updated minimum value of VIL
Added Note 5
Ordering Information
Updated valid combination
• Removed 45 ns, added 70 ns
*C - RYSU 05/23/2008 Global Removed fortified BGA package option
Ordering Information
Added the Regulated Volta ge option
Added the Extended Temperature Range
Updated the Valid Combination table
Pin Configuration Updated Pin Configuration table
Device Bus Operation Upda ted the S29AL008J Device Bus Operation
table and modified Note 3
Operating Ranges
Added Extended Temperature Range information
Added Regulated Vo ltage
Document History Page (Continued)
Document Title:S29AL008J 8 Mbit (1 M x 8-Bit/512 K x 16-Bit), 3 V, Boot Sector Flash
Document Number: 002-00778
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
Document Number: 002-00778 Rev. *K Page 50 of 52
S29AL008J
*D - RYSU 08/12/2008 Sector Protection/Unprotec tio n
Title changed to Sector Group Protection and Unprotection
Section amended and restated to Sector Group Protection and
Unprotection
Temporary Sector Unprotect
Title changed to Temporary Sector Group Unprotect
Figure 7.1; Title changed to Temporary Sector Group Unprotect Operation
Figure 7.2; Title changed to In-System Sector Protect/Unprotect Algorithms
Temporary Sector Unprotect
Title changed to Temporary Sector Group Unprotect
Figure 17.11; Title changed to Temporary Sector Group Unprotect/Timing
Diagram
Figure 17.12; Sector Group Protect/Unprotect Timing Diagram
Reading Toggle Bits DQ6/DQ2 Updated Figure 11.2
Ordering Information
Added SSOP56 package option
Updated the Valid Combination table
Connection Diagrams Added 56-pin Shrink Small Outline Package
(SSOP56)
Physical Dimensions Added 56-pin Shrink Small Outline Package
(SSOP56)
Alternat e C E # C on t ro lled Erase/Program
Operations TDS value chang ed from 45 ns to 35 ns
Erase/Program Operation Added fig ure Toggle Bit Timing (Durin g
Embedded Algorithm)
Product Selector Guide Updated Table
*E - RYSU 10/29/2008 Customer Lockable: Secured Silicon
Sector Programmed and Protected at the Factory
Modified first bullet
Updated figure Secured Silicon Sector Protect Verify
TSOP and Pin Capacitance Updated Table
*F - RYSU 02/03/2009 Ordering Information Updated the Valid Combination table
Erase/Program Operation
Updated Table
Removed Figure Toggle Bit Timing (During Embedd ed Algorithm)
Erase and Programming Performance Updated Ta ble
*G - RYSU 07/09/2009 General Corrected minor typos
Physical Dimensions Updated TS048
Customer Lockable: Secured Silicon Sector NOT Programmed and
Protected at the Facto ry
Modified first bullet
Erase and Programming Performance Updated Ta ble
*H - RYSU 02/23/2010 Sector Erase Comman d Seq uen ce Added clarification regarding
additional sector erase commads during time-out period
Command Definit ions Table Added Note 15 to clarify additional sector
erase commands during ti me-out period
Document History Page (Continued)
Document Title:S29AL008J 8 Mbit (1 M x 8-Bit/512 K x 16-Bit), 3 V, Boot Sector Flash
Document Number: 002-00778
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
Document Number: 002-00778 Rev. *K Page 51 of 52
S29AL008J
*I - RYSU 12/09/2011 Ordering Information Added Low-Halogen 48-ball BGA ordering option
RESET#: Hardware Reset Pin Added sentence regarding use of CE# with
RESET#
RESET# Timings Fi gure Added note
*J - RYSU 04/12/2012 Global
Removed SSOP-56
*K 5042120 RYSU 12/11/2015 Updated to Cypress template
Document History Page (Continued)
Document Title:S29AL008J 8 Mbit (1 M x 8-Bit/512 K x 16-Bit), 3 V, Boot Sector Flash
Document Number: 002-00778
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
Document Number: 002-00778 Rev. *K Revised December 11, 2015 Page 52 of 52
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Semiconductor Corp. All products and company names mentioned in this document may be the trademarks of their respective holders.
© Cypress Semicondu ctor Corpor ation, 2007-2015. The informatio n contai ned herei n is subject to chan ge without no tice. Cypress Semiconductor Corporation assumes no responsibility for the use of
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S29AL008J
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