Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 6
1Publication Order Number:
MBRS260T3/D
MBRS260T3G,
NRVBS260T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metaltosilicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
Compact Package with JBend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
GuardRing for OverVoltage Protection
Low Forward Voltage Drop
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings:
Machine Model = C
Human Body Model = 3B
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SMB
CASE 403A
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM
B26 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= PbFree Package
AYWW
B26G
G
(Note: Microdot may be in either location)
Device Package Shipping
ORDERING INFORMATION
MBRS260T3G SMB
(PbFree)
2,500 /
Tape & Reel
NRVBS260T3G SMB
(PbFree)
2,500 /
Tape & Reel
MBRS260T3G, NRVBS260T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current
(At Rated VR, TL = 95C)
IO2.0
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 60
A
Storage Temperature Range Tstg 55 to +150 C
Operating Junction Temperature TJ55 to +125 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 2)
RqJL
RqJA
24
80
C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A)
(iF = 2.0 A)
vFTJ = 25C TJ = 125CV
0.51
0.63
0.475
0.55
Maximum Instantaneous Reverse Current (Note 3)
(VR = 60 V)
IRTJ = 25C TJ = 125CmA
0.2 20
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%.
MBRS260T3G, NRVBS260T3G
http://onsemi.com
3
Figure 1. Typical Forward Voltage
0.1 0.2 0.4 0.70.6
10
0.1
1
IF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
VF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.2 0.80.4 0.60.3 0.5
10
0.1
1
VF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current
10 3002040
IR, REVERSE CURRENT (AMPS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
75C
25C
1.0E02
125C
75C
25C
10 3002040
10
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
0.3 0.5 0.8
125C75C
25C
125C
6050 50 60
100
0.70.1
1.0E03
1.0E04
1.0E05
1.0E06
1.0E07
25C
f = 1 MHz
Figure 5. Current Derating Junction to Lead
70 9060 80 100
1.5
IF
, AVERAGE FORWARD CURRENT (A)
TL, LEAD TEMPERATURE (C)
Figure 6. Forward Power Dissipation
2.5
3
3.5
0.5 1.501 2
0
0.2
PFO, AVERAGE POWER DISSIPATION (W)
IO, AVERAGE FORWARD CURRENT (AMPS)
0.4
0.6
120110 130 2.5 3
1
1.8
2
0
0.5
1
2
dc
SQUARE WAVE
0.8
1.2
1.4
1.6
dc
SQUARE WAVE
MBRS260T3G, NRVBS260T3G
http://onsemi.com
4
Figure 7. Thermal Response Junction to Case
Figure 8. Thermal Response Junction to Ambient
0.10.00001
t, TIME (s)
1.0E+00
1.0E01
1.0E02
1.0E03
1.0E04
0.0001 0.001 0.01 1.0 10 100 1000
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
t, TIME (s)
1.0E+00
1.0E01
1.0E02
1.0E03
1.0E04
50%
20%
10%
5.0%
2.0%
1.0%
RT
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)RT
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.10.00001 0.0001 0.001 0.01 1.0 10 100 1000
Rtjl(t) = Rtjl*r(t)
MBRS260T3G, NRVBS260T3G
http://onsemi.com
5
PACKAGE DIMENSIONS
SMB
CASE 403A03
ISSUE H
E
bD
c
L1
L
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
2.261
0.089
2.743
0.108
2.159
0.085 ǒmm
inchesǓ
SCALE 8:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.90 2.20 2.28 0.075
INCHES
A1 0.05 0.10 0.19 0.002
b1.96 2.03 2.20 0.077
c0.15 0.23 0.31 0.006
D3.30 3.56 3.95 0.130
E4.06 4.32 4.60 0.160
L0.76 1.02 1.60 0.030
0.087 0.090
0.004 0.007
0.080 0.087
0.009 0.012
0.140 0.156
0.170 0.181
0.040 0.063
NOM MAX
5.21 5.44 5.60 0.205 0.214 0.220
HE
0.51 REF 0.020 REF
D
L1
HE
POLARITY INDICATOR
OPTIONAL AS NEEDED
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBRS260T3/D
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