MBRS260T3G, NRVBS260T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS Features Compact Package with J-Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard-Ring for Over-Voltage Protection Low Forward Voltage Drop AEC-Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb-Free* SMB CASE 403A MARKING DIAGRAM AYWW B26G G Mechanical Characteristics Case: Molded Epoxy Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 95 mg (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C Human Body Model = 3B B26 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping MBRS260T3G SMB (Pb-Free) 2,500 / Tape & Reel NRVBS260T3G SMB (Pb-Free) 2,500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 6 1 Publication Order Number: MBRS260T3/D MBRS260T3G, NRVBS260T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 95C) Symbol Value Unit VRRM VRWM VR 60 V IO 2.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg -55 to +150 C Operating Junction Temperature TJ -55 to +125 C Voltage Rate of Change (Rated VR, TJ = 25C) 60 dv/dt 10,000 A V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Lead (Note 1) Thermal Resistance, Junction-to-Ambient (Note 2) Symbol Value Unit RqJL RqJA 24 80 C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol vF Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 A) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3) IR (VR = 60 V) 3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%. http://onsemi.com 2 Value Unit TJ = 25C TJ = 125C 0.51 0.63 0.475 0.55 TJ = 25C TJ = 125C 0.2 20 V mA MBRS260T3G, NRVBS260T3G 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 75C 125C 25C 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 0.1 0.2 0.3 0.4 0.5 0.6 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 IR, REVERSE CURRENT (AMPS) 25C f = 1 MHz C, CAPACITANCE (pF) 1.0E-03 75C 1.0E-04 1.0E-05 25C 1.0E-06 1.0E-07 0 10 20 30 50 40 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance PFO, AVERAGE POWER DISSIPATION (W) 2 SQUARE WAVE 1 0.5 70 10 VR, REVERSE VOLTAGE (VOLTS) 2.5 1.5 0 Figure 3. Typical Reverse Current dc 3 10 60 3.5 60 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 125C 0 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1.0E-02 IF, AVERAGE FORWARD CURRENT (A) 25C 0.1 0.8 75C 125C 80 90 100 110 120 130 50 60 2.5 3 2 1.8 1.6 dc 1.4 1.2 1 SQUARE WAVE 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating - Junction to Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRS260T3G, NRVBS260T3G 1.0E+00 50% 20% 1.0E-01 10% 5.0% 1.0E-02 2.0% 1.0% 1.0E-03 1.0E-04 1.0E+00 1.0E-01 Rtjl(t) = Rtjl*r(t) 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 t, TIME (s) Figure 7. Thermal Response - Junction to Case 50% 20% 10% 5.0% 1.0E-02 2.0% 1.0E-03 1.0% 1.0E-04 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 8. Thermal Response - Junction to Ambient http://onsemi.com 4 MBRS260T3G, NRVBS260T3G PACKAGE DIMENSIONS SMB CASE 403A-03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.087 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.090 0.007 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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