Publication Number 21258 Revision EAmendment 7Issue Date March 3, 2009
Am29F400B Known Good Die
Am29F400B Known Good Die Cover Sheet
Data Sheet (Retired Product)
This product has been retired and is not recommended for designs. Please contact your Spansion representative for
alternates. Availability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
2 Am29F400B Known Good Die 21258_E7 March 3, 2009
Data Sheet (Retired Product)
This page left intentionally blank.
SUPPLEMENT
Publication# 21258 Rev: E Amendment/7
Issue Date: March 3, 2009
Am29F400B Known Good Die
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 2
This product has been retired and is not recommended for designs. Please contact your Spansion representative
for alternates. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■Single power supply operation
— 5.0 volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
■Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F400 device
■High performance
— Access time as fast as 70 ns
■Low power consumption (typical values at
5 MHz)
— 1 µA standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
■Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■Top or bottom boot block configurations
available
■Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■Minimum 1,000,000 write cycle per sector
guaranteed
■Compatibility with JEDEC standards
— Pinout and software compatible with single-
power-supply Flash
— Superior inadvertent write protection
■Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
■20-year data retention at 125°C
■Tested to datasheet specifications at
temperature
— Contact AMD for higher temperature range
devices
■Quality and reliability levels equivalent to
standard packaged components
2 Am29F400B Known Good Die
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F400B in Known Good Die (KGD) form is a
4 Mbit, 5.0 volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reli-
ability and quality as AMD products in packaged form.
Am29F400B Features
The Am29F400B is a 4 Mbit, 5.0 volt-only Flash
memory organized as 524,288 bytes or 262,144 words.
The word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. This device
is designed to be programmed in-system with the stan-
dard system 5.0 volt VCC supply. A 12.0 V VPP is not
required for write or erase operations. The device can
also be programmed in standard EPROM programmers.
This device is manufactured using AMD’s 0.32 µm
process technology, and offers all the features and ben-
efits of the Am29F400, which was manufactured using
0.5 µm process technology.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already pro-
grammed) before executing the erase operation. Dur-
ing erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
Electrical Specifications
Refer to the Am29F400B data sheet, document
number 21505, for full electrical specifications on the
Am29F400B in KGD form.
Am29F400B Known Good Die 3
SUPPLEMENT
PRODUCT SELECTOR GUIDE
DIE PHOTOGRAPH DIE PAD LOCATIONS
Family Part Number Am29F400B KGD
Speed Option
VCC = 5.0 V ± 5% -75
VCC = 5.0 V ± 10% -90 -120
Max access time, ns (tACC)70 90 120
Max CE# access time, ns (tCE)70 90 120
Max OE# access time, ns (tOE)30 35 50
23456789
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
AMD logo location
3537383940414243136
10
11
12 32
33
34
30 31
4 Am29F400B Known Good Die
SUPPLEMENT
PAD DESCRIPTION
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Pad Signal Pad Center (mils) Pad Center (millimeters)
X Y X Y
1 VCC 0.00 0.00 0.0000 0.0000
2 DQ4 6.87 0.00 0.1745 0.0000
3DQ12 12.78 0.00 0.3246 0.0000
4 DQ5 18.62 0.00 0.4729 0.0000
5DQ13 24.53 0.00 0.6231 0.0000
6 DQ6 30.37 0.00 0.7714 0.0000
7DQ14 36.29 0.00 0.9218 0.0000
8 DQ7 42.12 0.00 1.0698 0.0000
9DQ15/A-1 48.04 0.00 1.2202 0.0000
10 VSS 55.68 –1.35 1.4143 –0.0343
11 BYTE# 57.48 6.50 1.4600 0.1651
12 A16 57.48 18.04 1.4600 0.4582
13 A15 57.13 172.01 1.4511 4.3691
14 A14 51.29 172.01 1.3028 4.3691
15 A13 45.87 172.01 1.1651 4.3691
16 A12 40.04 172.01 1.0170 4.3691
17 A11 34.61 172.01 0.8791 4.3691
18 A10 28.78 172.01 0.7310 4.3691
19 A9 23.36 171.76 0.5933 4.3627
20 A8 17.43 172.01 0.4427 4.3691
21 WE# 12.00 172.01 0.3048 4.3691
22 RESET# 2.42 175.78 0.0615 4.4648
23 RY/BY# –9.49 175.78 –0.2411 4.4648
24 A17 –24.48 172.01 –0.6218 4.3691
25 A7 –30.32 172.01 –0.7701 4.3691
26 A6 –35.74 172.01 –0.9078 4.3691
27 A5 –41.57 172.01 –1.0559 4.3691
28 A4 –47.00 172.01 –1.1938 4.3691
29 A3 –52.83 172.01 –1.3419 4.3691
30 A2 –58.25 172.01 –1.4796 4.3691
31 A1 –64.09 172.01 –1.6279 4.3691
32 A0 –64.44 18.04 –1.6368 0.4582
33 CE# –64.44 6.50 –1.6368 0.1651
34 VSS –64.44 –3.79 –1.6368 –0.0962
35 OE# –54.94 –2.27 –1.3955 –0.0576
36 DQ0 –47.36 0.00 –1.2030 0.0000
37 DQ8 –41.45 0.00 –1.0528 0.0000
38 DQ1 –35.61 0.00 –0.9045 0.0000
39 DQ9 –29.69 0.00 –0.7541 0.0000
40 DQ2 –23.86 0.00 –0.6061 0.0000
41 DQ10 –17.94 0.00 –0.4557 0.0000
42 DQ3 –12.11 0.00 –0.3076 0.0000
43 DQ11 –6.19 0.00 –0.1572 0.0000
Am29F400B Known Good Die 5
SUPPLEMENT
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD
sales office to confirm availability of specific valid combinations and to check on newly released combinations.
Am29F400B T-75 DP C 2
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
Contact AMD for higher temperature range devices.
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP = Waffle Pack
140 die per 5 tray stack
DT = Surftape™ (Tape and Reel)
2500 per 7-inch reel
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F400B Known Good Die
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory—Die Revision 2
5.0 Volt-only Program and Erase
Valid Combinations
AM29F400BT-75
AM29F400BB-75
DPC 2, DPI 2, DPE 2,
DTC 2, DTI 2, DTE 2,
AM29F400BT-90
AM29F400BB-90
AM29F400BT-120
AM29F400BB-120
6 Am29F400B Known Good Die
SUPPLEMENT
PACKAGING INFORMATION
Surftape Packaging
Waffle Pack Packaging
Direction of Feed
Orientation relative to
leading edge of tape
and reel
AMD logo location
12 mm
Orientation relative to
top left corner of
Waffle Pack
cavity plate
AMD logo location
Am29F400B Known Good Die 7
SUPPLEMENT
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F400B product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
Figure 1. AMD KGD Product Test Flow
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
Shipment
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
8 Am29F400B Known Good Die
SUPPLEMENT
PHYSICAL SPECIFICATIONS
Die Dimensions . . . . . . . . . . . . . . 135 mils x 198 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . 3.42 mm x 5.02 mm
Die Thickness. . . . . . . . . . . . . . . . . ~500 µm/~20 mils
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm
Pad Area Free of Passivation . . . . . . . . . 13.98 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Bond Pad Metallization . . . . . . . . . . . . . . . . . . . Al/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
. . . . . . . . . . . . . . . . . . . . may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . . . . . SiN/SOG/SiN
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V
Junction Temperature Under Bias . .TJ (max) = 130°C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C
Contact AMD for higher temperature range devices.
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA,
. . . . . . . . . . . . . . . . . . . . . . . . .and Penang, Malaysia
Manufacturing ID (Top Boot) . . . . . . . . . . . .98F02AK
(Bottom Boot) . . . . . . . 98F02ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Am29F400B Known Good Die 9
SUPPLEMENT
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective mate-
rials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for envi-
ronmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unau-
thorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replace-
ment Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original pur-
chase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instruc-
tions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the above-
referenced Warranty Exclusions. Buyer shall ship such
defective Die to AMD via AMD’s carrier, collect. Risk of
loss will transfer to AMD when the defective Die is pro-
vided to AMD’s carrier. If Buyer fails to adhere to these
warranty returns guidelines, Buyer shall assume all risk
of loss and shall pay for all freight to AMD’s specified
location. The aforementioned provisions do not extend
the original warranty period of any Known Good Die
that has either been repaired or replaced by AMD.
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
RESPECT TO THE DIE’S PROCESSING OF DATE
DATA, AND SHALL HAVE NO LIABILITY FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-
TICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSI-
BILITY OF SUCH DAMAGES.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-
ENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR
ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reason-
ably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applica-
tions is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
10 Am29F400B Known Good Die
SUPPLEMENT
REVISION SUMMARY
Revision A (May 1997)
Initial release.
Revision B (January 1998)
Formatted to match current template. Updated Distinc-
tive Characteristics and General Description sections
using the current main data sheet. Updated for CS39
process technology.
Revision B+1 (February 1998)
Distinctive Characteristics
The minimum guarantee per sector is now 1 million cycles.
Global
Added -75 and -90 speed options.
Pad Description
Corrected coordinates for pads 2, 19, 22, 35, 40, and 42.
Physical Specifications
Changed die thickness specification to ~20 mils.
Revision B+2 (May 1998)
Die Pad Locations
Moved AMD logo to above pad 23.
Revision C (June 1998)
Distinctive Characteristics
Changed “Manufactured on 0.35 µm process technology”
to “Manufactured on 0.32 µm process technology”.
General Description
Third paragraph: Changed “AMD’s 0.35 µm process
technology” to “AMD’s 0.32 µm process technology”.
Die Photograph
Replaced with photograph of Die Revision 2.
Die Pad Locations
Corrected the location of the AMD logo to above pad 22
from pad above pad 13. Modified figure to match new
die photograph.
Pad Description
Replaced table with new pad coordinates.
Physical Specifications
Die Dimensions: Changed to 135 mils x 198 mils, 3.43
mm x 5.03 mm from 141.34 mils x 207.48 mils, 3.59
mm x 5.27 mm.
Die Thickness: Added ~500 µm.
Pad Area Free of Passivation: Changed to 20.85 mils2
and 13,433 µm2 from 15.52 mils2 and 10,000 µm2.
Passivation: Changed to SiN/SOG/SiN from Nitride/
SOG/Nitride.
Manufacturing Information
Manufacturing ID: Changed to 98F02AK (top boot) and
98F02ABK (bottom boot) from 98965AK (top boot) and
98965ABK (bottom boot).
Fabrication Process: Changed to CS39S from CS39.
Die Revision: Changed to 2 from 1.
Revision C+1 (September 1998)
Page 5, Ordering Information
Package Type and Minimum Order Quantity: Changed
Waffle Pack to 140 die per 5 tray stack from 180 die per
5 tray stack. Changed Gel-Pak® Die Tray to 594 die per
6 tray stack from 378 die per 6 tray stack. Changed Sur-
ftape™ (Tape and Reel) to 2500 per 7-inch reel from
1800 per 7-inch reel.
Page 7, Physical Specifications
Die Dimensions: Changed to 3.42 mm x 5.02 mm from
3.43 mm x 5.03 mm.
Bond Pad Size: Changed to 4.7 mils x 4.7 mils and
119.7 µm x 119.7 µm from 3.74 mils x 3.74 mils and
95 µm x 95 µm.
Pad Area Free of Passivation: Changed to 13.98 mils2
and 9,025 µm2 from 20.85 mils2 and 13,433 µm2.
Bond Pad Metallization: Changed to Al/Cu from Al/Cu/Si.
Page 7, Manufacturing Information
Manufacturing ID (Top Boot): Changed to 98F02AK
from 98F02A.
Revision D (November 1998)
Global
Revised document specifications for die shrink from
0.35 µm to 0.32 µm process technology.
Terms and Conditions
Replaced warranty with new version.
Revision E (December 1998)
Packaging Information
Added section. Moved orientation information from die
photograph section into this section.
Revision E+1 (February 1999)
Die Pad Locations
Corrected top row of pad callouts.
Revision E+2 (June 14, 1999)
Physical Specifications
Corrected the bond pad dimensions.
Am29F400B Known Good Die 11
SUPPLEMENT
Revision E+3 (July 12, 1999)
Ordering Information
Corrected the die revision indicated in the example and
the valid combinations to 2.
Revision E+4 (November 17, 1999)
Distinctive Characteristics, Ordering Information,
DC Operating Conditions
Added note to contact AMD for higher temperature
range.
Revision E+5 (June 27, 2001)
Manufacturing Information
Added Penang, Malaysia as a test facility (ACN2016).
Revision E+6 (July 19, 2007)
Ordering Information
Removed package type options DG and DW
Modified Valid Combination table
Packaging Information
Removed all references to Gel-Pak
Revision E7 (March 3, 2009)
Global
Added obsolescence information.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 1997–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered
trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks
of their respective companies.
Copyright © 2006-2009 Spansion Inc. All rights reserved. Spansion®, the Spansion Logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™,
ORNAND2™, HD-SIM™, EcoRAM™ and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names
used are for informational purposes only and may be trademarks of their respective owners.
