2N7002S
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual N-Channel Enhancement MOS FET
VOLTAGE 60 Volts CURRENT 0.250 Ampere
APPLICATION
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
CONSTRUCTION
* Dual N-Channel Enhancement
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
2002-4
* Rugged and reliable.
* High saturation current capability.
* Voltage controlled small signal switch.
CIRCUIT
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter 2N7002S Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1 MΩ)60 V
VGSS Gate-Source Voltage - Continuous ±20 V
- Non Repetitive (tp < 50µs) ±40
IDMaximum Drain Current - Continuous 250 mA
- Pulsed 190
PDMaximum Power Dissipation 350 mW
220 mW
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TLMaximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds 300 °C
Thermal characteristics
RθJA Thermal Resistance, Junction-to-Ambient 450 °C/W
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
Dimensions in millimeters
SC-88/SOT-363
SC-88/SOT-363
0.7±0.1
0.9±0.1
0.15±0.05
0~0.1
2.1±0.1
0.1 Min.
0.65
0.65
1.3±0.1 2.0±0.2
0.2± 1.25±0.1
0.1
0.05
(S1)
(G1)
(S2)
(D1)
(D2)
(G2)
S1 G1
S2
D1
D2
G2
MARKING
* 702S
(1)
(6)
(3)
(1)
(4)
(3)
(4)
(6)
RATING CHARACTERISTIC CURVES ( 2N7002S )
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA 60 70 V
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1µA
TC=125°C 0.5 mA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 10 nA
IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V -10 nA
ON CHARACTERISTICS
(Note 1)
VGS(th) Gate Threshold Voltage VDS
= VGS, ID
= 250 µA1 2.0 2.5 V
RDS(ON) Static Drain-Source On-Resistance
Ω
VGS = 10 V, ID = 250 mA1.7 3.0
VGS = 4.0 V, ID = 100 mA 2.5 4.0
VDS(ON) Drain-Source On-Voltage V
VGS = 10 V, ID = 500mA0.6 3.75
VGS = 5.0 V, ID = 50 mA0.09 1.5
ID(ON) On-State Drain Current mA
VGS = 10 V, VDS = 7.5VDS(on) 800 1300
VGS = 4.5V, VDS = 10VDS(on) 500 700
gFS Forward Transconductance mS
VDS = 15 VDS(on), ID = 200 mA250
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz 25 50
Coss Output Capacitance 6 25
pF
Crss Reverse Transfer Capacitance 1.2
6
3
5
QgTotal Gate Charge VDS
D
= 30 V, VGS = 10 V,
I = 250 mA 0.6 1.0
Qgs Gate-Source Charge 0.06 25
nC
Qgd Gate-Drain Charge 0.06 5
ton Turn-On Time nS
VDD = 30 V, RL = 200
Ω
,
ID = 100 mA, VGS = 10 V,
RGEN = 10
Ω
20
toff
tr
tf
Turn-Off Time nS
VDD = 30 V, RL = 200
Ω
,
ID = 100 mA, VGS = 10 V,
RGEN = 10
Ω
20
7.5
7.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 115 mA
ISM Maximum Pulsed Drain-Source Diode Forward Current 0.8 A
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 200 mA (Note 1) 0.85 1.2 V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
RATING CHARACTERISTIC CURVES ( 2N7002S )
0 1 2 3 4 5
0
0.5
1
1.5
2.5
2
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
V = 10V
GS
DS
D
5.0
6.0
-50 -25 0 25 50 75 100 125 150
0
1.0
2.0
3.0
4.0
5.0
6.0
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 250mA
D
-50 -25 0 25 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 1 mA
D
V = V
DS GS
V , NORMALIZED
th
0 0.4 0.8 1.2 1.6 2
1
2
3
4
5
6
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V =4.0V
GS
D
R , NORMALIZED
DS(on)
7.0
4.5
10
5.0
6.0
9.0
8.0
0 0.4 0.8 1.2 1.6 2
0
1
2
3
4
5
6
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°CJ
25°C
-55°C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
0 2 4 6 8 10
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°CJ 25°C125°C
RATING CHARACTERISTIC CURVES ( 2N7002S )
-50 -25 025 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
BV , NORMALIZED
DSS
I = 250µA
D
0.20.40.6 0.81 1.2 1.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
SD
S
25°C
-55°C
0 0.1 0.20.3 0.4 0.5
0
.2
.4
.6
.8
1.0
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
V = 30V
DS
1 2 3 5 10 20 30 50
1
2
5
10
20
40
60
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature Figure 8. Body Diode Forward Voltage
Variation with Drain Current
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Figure 12. Switching Waveforms
Typical Electrical Characteristics (continued)
I =250mA
D
RATING CHARACTERISTIC CURVES ( 2N7002S )
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = (See Datasheet)
θJA
θJA
θJA
T - T = P * R (t)
θJAA
J
P(pk)
t
1 t
2
Figure 14. 2N7002S Transient Thermal Response Curve
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 13. 2N7002S Maximum Safe Operating Area
Typical Electrical Characteristics (continued)
100us
1ms
10ms
100ms
RDS(ON) Limit
DC
1s
10s
V = 10V
SINGLE PULSE
T = 25°C
GS
A
