Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -4.5
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -3.0
IDM Pulsed Drain Current ➀-18
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁157 mJ
IAR Avalanche Current ➀-4.5 A
EAR Repetitive Avalanche Energy ➀2.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂-25 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063in/1.6mm from case for 10s )
Weight 0.98 ( Typical ) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
oC
A
RADIATION HARDENED
IRHF597230
POWER MOSFET
THRU-HOLE (TO-39)
06/18/02
www.irf.com 1
200V, P-CHANNEL
c
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF597230 100K Rads (Si) 0.54Ω -4.5A
IRHF593230 300K Rads (Si) 0.54Ω -4.5A
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nLow Total Gate Charge
nProton Tolerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nCeramic Package
nLight Weight
For footnotes refer to the last page
44
#
T0-39
PD - 94450
IRHF597230 Pre-Irradiation
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.21 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.54 ΩVGS = -12V, ID = -3.0A
Resistance
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 3.6 — — S ( )V
DS > -15V, IDS = -3.0A ➃
IDSS Zero Gate Voltage Drain Current — — -10 VDS= -160V ,VGS=0V
— — -25 VDS = -160V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 40 VGS = -12V, ID = -4.5A
Qgs Gate-to-Source Charge — — 8.5 nC VDS = -100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 15
td(on) Turn-On Delay Time — — 25 VDD = -100V, ID = -4.5A,
trRise Time — — 30 VGS =-12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 50
tfFall Time — — 120
LS + LDTotal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in
from package) to Source lead(6mm/0.25in
from packge)with Source wire internally
bonded from Source pin to Drain pad
Ciss Input Capacitance — 1340 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 190 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 20 —
nA
Ω
➃
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 5.0
RthJA Junction-to-Ambient — — 175 Typical Socket Mount
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — -4.5
ISM Pulse Source Current (Body Diode) ➀— — -18
VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -4.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 200 ns Tj = 25°C, IF =-4.5A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 1.2 µCV
DD ≤ -25V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Tur n-on speed is substantially controlled by LS + LD.
A
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Pre-Irradiation IRHF597230
T able 1. Electrical Characteristics @ Tj = 25°C, Post T otal Dose Irradiation ➄➅
Parameter 100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -200 — -200 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 V GS = 20 V
IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS=-160V, VGS =0V
RDS(on) Static Drain-to-Source ➃ — 0.505 — 0.505 Ω VGS = -12V, ID =-3.0A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃ — 0.54 — 0.54 Ω VGS = -12V, ID =-3.0A
On-State Resistance (TO-39)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufactur ing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHF597230
2. Part number IRHF593230
VSD Diode Forward Voltage ➃ — -5.0 — -5.0 V VGS = 0V, IS = -4.5A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects character ization is illustrated in Fig. a and Table 2.
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
T able 2. Single Event Effect Safe Operating Area
I on L E T Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
B r 37.3 285 36.8 - 200 - 200 - 200 - 200 -75
I 59.9 345 32.7 - 200 - 200 - 200 - 50 —
Au 82.3 357 28.5 - 200 - 200 - 200 - 35 —
-250
-200
-150
-100
-50
00 5 10 15 20
VGS
VDS
Br
I
Au
IRHF597230 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-3.7V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP -15V
-12V
-7.0V
-5.0V
-4.5V
-4.3V
-4.0V
BOTTOM -3.7V
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-3.7V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-12V
-7.0V
-5.0V
-4.5V
-4.3V
-4.0V
BOTTOM -3.7V
1
10
100
3.5 4.0 4.5 5.0 5.5 6.0 6.5
V = -50V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-4.5A
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Pre-Irradiation IRHF597230
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.5 1.5 2.5 3.5 4.5 5.5
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
010 20 30 40 50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-4.5A
V =-40V
DS
V =-100V
DS
V =-160V
DS
1 10 100 1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
IRHF597230 Pre-Irradiation
6www.irf.com
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
www.irf.com 7
Pre-Irradiation IRHF597230
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
QG
QGS QGD
VG
Charge
-12 V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER A
15V
-20V
tpV
(
BR
)
DSS
I
AS
VGS
VDD
+
-
25 50 75 100 125 150
0
50
100
150
200
250
300
350
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-2.0A
-2.8A
-4.5A
IRHF597230 Pre-Irradiation
8www.irf.com
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = - 50V, star ting TJ = 25°C, L=15.5 mH
Peak IL = -4.5A, VGS = -12V
➂ ISD ≤ - 4.5A, di/dt ≤ - 360A/µs,
VDD ≤ - 200V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/02
Case Outline and Dimensions — TO-205AF (Modified T O-39)
LEGEND
1- SOURCE
2- GA TE
3- DRAIN
