ee ey ait ah a a * a aE eee RELIABLE POWER SEMICONDUCTOR THYRISTORS Te Te Pape Resets TT i ial Aaah aa ata TYPE Yon a) Mav) lism = Pt Vm @ Im Rye) Igr VaR eT VOLTS AMP AMP AMP AMP2SEC VOLTS AMP C/W mA SC126F 50 12 @ 75C 7.7 @75C 120 75 1.8 24 2.5 25 ,SC126A 100 12 @ 75C 7.7 @75C 120 75 1,8 24 2.5 25 S8C126B 200 12 @ 75C 7.7@75C 120 75 1.8 24 2.5 25 SC126C 300 12 @ 75C 7.7@75C 120 75 1.8 24 2.5 25 %, $C126D 400 12 @ 75C 7.7@75C 120 75 1.8 24 2.5 25 J SC126E 500 12 @ 75C 7.7@75C 120 75 1.8 24 2.5 25 J/S8C126M 600 12 @ 75C 7.7@75C 120 75 1.8 24 2.5 25 2N6394 50 7.6 @ 75C 5@75C 100 32 2 24 3.5 60 J 2N6395 100 7.6 @ 75C 5@75C 100 32 2 24 3.5 60 oP 2N6396 200 7.6 @ 75C 5@75C 100 32 2. 24 3.5 60 2N6397 400 7.6 @ 75C 5 @75C 100 32 2 24 3.5 60 2N6398 600 7.6 @ 75C 5 @75C 100 32 2 24 3.5 60 9N6399 800 7.6 @ 75C 5 @75C 100 32 2 24 3.5 60 STY504 50 4,0 @ 75C 2.5 @ 75C 60 - 2 8 4 50 ~STY1004 100 4.0 @ 75C 2.5 @75C 60 - 2 8 4 50 #STY2004 200 4.0 @ 75C 2.5 @75C 60 - 2 8 4 50 ASTY3004 300 4.0 @ 75C 2.5 @ 75C 60 - 2 8 4 50 STY4004 400 4.0 @ 75C 2.5 @75C 60 - 2 8 4 50 *STY5004 500 4.0 @ 75C 2.5 @ 75C 60 - 2 8 4 50 -STY6004 600 4.0 @ 75C 2.5 @ 75C 60 - 2 8 4 50 /2N3668 100 12.5 @ 80C 8@s0c 200 165 1.8 25 1.7 40 [, / 2N8669 200 12.5 @ 80C 8 @80C 200 165 1.8 25 1.7 40 st 2N3670 400 12.5 @ 80C 8 @80C 200 165 1.8 25 1.7 40 \_ aves ' 600 12,5 @ 80C 8@s0c 200 165 1.8 25 1.7 40 _ SN800 50 12 @ 80C 8 @s80cc 120 75 25 15 1.7 50 SN801 100 12 @ 80C 8 @s0cc 120 7 2.5 15 1.7 50 SN802 200 12 @ 80C 8 @80c 120 75 2.5 15 1.7 50 SN803 300 12 @ 80C 8 @s0;c 120 7 2.5 15 1.7 50 SN804 400 12 @ 80C 8 @80C 120 75 2.5 15 1.7 50 SN805 500 12 @ 80C 8 @80C 120 7 2.5 15 1.7 50 SN806 600 12 @ 80C 8 @80C 120 75 2,5 15 1.7 50 10SEMICONDUCTORS one a a a a Igp_ = Paiavy Pom Ty | om ly T tg Outline Fig ; aR V/MICRO MICRO A WATT WATT C mA mA SEC SEC ; 2 0.5 2.0 120 1.5 @120C 50 50 50 TO-220AB 12 2 0.5 2.0 120 1.5 @ 120C 50 = 50 50 TO-220AB 12 2 0.5 2.0 120. 1.5 @ 120C 50 ~=s 50 50 TO-220AB 12 E 2 0.5 2.0 120 1.5 @ 120C 502s 50 50 TO-220AB 12 | 2 05 #20 120 1.5 @120C 50 50 - 50 TO-220AB 12 ; 2 0.5 2.0 120 1.5 @ 120C 50 50 50 TO-220AB 12 2 0.5 2.0 120 1.5 @ 120C 50 3 s-B0 50 TO-220AB 12 2 0.5 2.0 125 2.0 @ 120C 60 i - TO-220AB 12 2 0.5 2.0 125 2.0 @ 120C 60 - - TO-220AB 12 : 2 0.5 2.0 125 2.0 @ 120C 60 - TO-220AB 12 / 2 0.5 2,0 125 2.0 @ 120C 60 Oi - TO-220AB 12 : 2 0.5 2.0 125 2.0 @ 120C 60 - TO-220AB 12 2 0.5 (2.0 125 2.0 @ 120C 60 - | TO-220AB 12 2 0.5 2.0 120 2.0 @ 120C 50 =. 200 40 TO-220AB 12 2 0.5 2.0 120 2.0 @ 120C 50 200 40 TO-220AB 12 2 0.5 2.0 120 2.0 @ 120C 50 =. 200 40 TO-220AB 12 ; 2 0.5 2.0 120 2.0 @120C 50 200 40 TO-220AB 12 E 2 0.5 2.0 120 2.0 @ 120C 50 200 40 TO-220AB 12 k 2 0.5 2.0 120 2.0 @ 120C 50 200 40 TO-220AB 12 : 2 0.5 2.0 120 2.0 @120C | 50 200 40 TO-220AB 12 : - 0.5 - 125 2/1 50 100 - TO-3 13 E - 0.5 - 125 2.5/1.25 50 8=100St TO-3 13 ; - 0.5 - 125 3/1.5 50 100 - TO-3 13 : - 05 - 1254/8 500 100ts- TO-3 13 : 0.5 0.5 5 125 2.5 @ 100C 50 100 - TO-3 13 ; 0.5 05 5 125 2.5 @ 100C 50 =6.100~~ TO-3 13 ; 0.5 05 5 125 2.5 @ 100C 500 100tir TO-3 13 ; 0.5 0.5 5 125 2.5 @ 100C 50 1000S - TO-3 13 . 0.5 0.5 5 125 2.5 @ 100C 50 100 - TO-3 13 0.5 05 5 125 2.5 @ 100C 50 100 - TO-3 + 13 ; 0.5 05 5 125 2.5 @ 100C 50 6100SCt TO-3 13 E a, tee ee ee et ee eta ee ee RELIABLE POWER SEMCONDUCTOR THYRISTORS (Conta.) a tee ee ee To ee ei et ee te ee Pe ee et E V | , TYPE ORM_ T(RMS) I Tay) lism = Rt Vm @ IM RtH(J-c) let f ________Varm __ @Tr : | VOLTS AMP AMP AMP AMP2SEC VOLTS AMP C/W mA 4 . N500 50 8 @ 80C 5 @ 80C 80 35 2.5 10 - 50 VAN50L 100 8 @ 80C 5 @ 80C 80 35 2,5 10 - 50 ,SN502 200 8 @ 80C 5 @ 80C = 80 35 2.5 10 - 50 : 78N503 300 8 @ 80C 5 @ 80C = 80 35 2.5 10 - 50 ' 78N504 400 8 @ 80C 5 @ 80C 880 35 2.5 10 - 50 : 78N505 500 8 @ 80C 5 @ 80C = 880 35 2.5 10 - 50 ; /8N506 ~-600 8 @ 80C 5 @ 80C ~ 80 35 2.5 10 - 50 FE rm i Pring 50 3.2 @ 75C 2@75C 32 5 2.5 5 15 20 a 7 SN 201 100 3.2 @ 75C 2@75C 32 5 2.5 5 15 20 - ,5N202 200 3.2 @ 75C 2@75C 32 5 2.5 5 15 20 4 -8N203 300 3.2 @ 75C 2@75C 32 5 2.5 5 15 20 , SN204 400 3.2 @ 75C 2@75C 32 5 2.5. 5 15 20 P ,8N205 5003.2 @ 75C 2@75C 382 5 25 5 15 20 4 SN206 600 3.2 @ 75C 2@75C 32 5 2.5 5 15 20 4 / E /5N100 50 1.6 @ 70C 10 @ 85C) 15 1 2.0 G@2A 20 q _SN101 =: 100 1.6 @ 70C 10@ 85C = 15 1 2.0 @2A 20 E SN102 200 1.6 @ 70C 10@85C 15 1 2.0 @2A 20 S $N103 -300 1.6 @ 70C 10 @ 85C) =15 1 2.0 @2A 20 10 a /SN 104 400 1.6 @ 70C 10 @ 859C) = 15 1 2.0 @2A 20 10 4 /8N105 500 1.6 @ 70C 10 @ 85C) = 15 1 2.0 @2A 20 10 f SN106 600 1.6 @ 70C 10 @ 85C = 15 1 2.0 @2A 20 10 : 2N5060 - 30 0.8 @ 35C 0.5 @ 55C 6 0.18 1.7 @1A 75 0.2 E 2N5061 60 0.8 @ 35C 0.5 @55C 6 0.18 1.7 @A 75 0.2 2N5062 100 0.8 @ 35C 0.5 @55C 6 0.18 1.7 @IA 75 0.2 ely 2N5063 150 0.8 @ 35C 0.5 @55C 6 0.18 1.7 @IA 75 0.2 o%/ 2N5064 200 0.8 @ 35C 0.5 @ 55C 6 0.18 1.7 GIA 75 0.2 * 9nes64 300 0.8 @ 35C 0.5 @ 55C 6 0.18 1.7 @IA 75 0.2 2N6565 400 0.8 @ 35C 0.5 @55C 6 0.18 1.7 @IA 75 0.2 - N301S 100 3 @ 75C 2 40 - 2.5(max) 6 8.8 20 , SN601S 100 6 @ 75C 3.75 50 25 2.5(maxy 12 4.4 20 _ SN602S 200 6 @ 75C 3.75 50 25 2.5(max) 12 4.4 20 12fs" SEMICONDUCTORS lop Poway) Pom CTyy~SCCL ORM. ly tq Outline Fig rr V/MICRO. MICRO A WATT WATT C mA mA SEC SEC 0.5 0.5 5 125 2.5 @ 100C 50 100 - TO-3 13 0.5 0.5 5 125 2.5 @ 100C 50 100 = TO-3 13 0.5 0.5 5 125 2.5 @ 100C 50 100 - TO-3 13 0.5 0.5 5 125 2.5 @ 100C 50 100 = TO-3 13 0.5 0.5 5 125 2.5 @ 100C 50 100 - TO-3 13 0.5 0.5 5 125 2.5 @ 100C 50 100 - TO-3 13 0.5 0.5 5 125 2.5 @ 100C ~ 50 100 - TO-3 13 0.2 0.5 2 105 1.5 @ 100C 20 100 - TO-39 14 0,2 0.5 2 105 1.5 @ 100C 20 100 - TO-39 14 0.2 0.5 2 105 1.5 @ 100C 20 100 - TO-39 14 0.2 0.5 2 105 1.5 @100C 20 100 7 TO-39 14 0.2 0.5 2 105 1.5 @ 100C 20 100 - TO- 39 14 0.2 0.5 2, 105 1.5 @ 100C 20 100 - TO-39 14 0.2 0.5 2 105 1.5 @ 100C 20 100 7 TO-39 14 0.1 0.03 0.1 125 ImA @ 100C 10 100 - TO-39 14 0.1 0.03 0,1 125 imA @100 C 10 100 = TO-39 14 0.1 0.03 O12 125 imA @ 100C 10 100 7 TO-39 14 0.1 0.03 0.1 125 imA @ 125C 10 100 - TO-39 14 0.1 0.03 0.1 125 lmA @ 125C 10 100 - TO-39 14 0.1 0,03 0.1 125 ImA @ 125C 10 100 - TO-39 14 0.1 0.03 0.1 125 ImA @ 125C 10 100 - TO-39 14 1 0.01 0.1 125 0.05 @ 125C 5 50 = TO-92/18 15,16 1 0.01 O.1 125 0.05 @ 125C 5 50 ; TO-92/18 15,16 1 0.01 0.1 125 0.05 @ 125C 5 50 - TO-92/18 15,16 1 0.01 0.4 125 0.05 @ 125C 5. 50 7 TO-92/18 15,16 1 0.01 0.1 125 0.05 @ 125C 5 50 = TO-92/18 15,16 1 0.01 0.1 125 0.05 @ 125C 5 50 - TO-92/18 15,16 1 0.01 0.1 125 0.05 @ 125C 5 50 S TO-92/18 15,16 2(Typ) 0.05 2(Typ) 120 50 - - TO 66 2(Typ) 0.05 2(Typ) 120 50 200 - TO 66 2(Typ) 0.05 2Typ) 120 50 200 - TO 66 ee ee Se ETE I IT Te LT ITE TIE SE eerdDAYTD HLA dWI2 HLA WA NI SNOISNNIG TV ALON aivag LAOHLIM i aivud HLM ed ao HOLid 1X9 4 ot te ated ade dnt shane adalah wc soa alsa chad i hinbhhiche'in tiie sound 2 o wo y a k fA ft Aa _ OL aT 6 q > aivVee LNOHLIM aiV8s HLA eetiht = ANNE He . i es - Pa AWN Oe F- : = : 2. rad hk A ja ce xvn x ~~ v Cc - rd ou >| et s 2 f = | 2 * I o erst ke F rr i jn zac - bse 7 = ote ors f | r | > 1 As : 2 _ . n lato _t oy ny wo LP 2 G3 "UN xyni 3 a xvnl ors a : a si F | xe 1 8 . Z Civea LNORLIM ; civua HLM = t ara l- iF Mun Stax en OrEt OE a - | | z. . - : , o ~ Pa ; f 3s . , . xvn 3Arir | se) 3S pa ver > > mt 7 it , is na ore OEE 3 $ bo [x mo t . Yr ; an . Ph De ee a eta Soca yee