BCX5210TA - DIODES INC - Datasheet.Cloud

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Datasheet Number: DS35368 Rev. 2 – 2 1 of 7

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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features

• I

C = -1A Continuous Collector Current

• Low Saturation Voltage VCE(sat) < -500mV @ -0.5A

• Gain groups 10 and 16

• Epitaxial Planar Die Construction

• Complementary NPN types: BCX54, 55, and 56

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Devices (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding

Compound (Note 2)

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.072 grams (Approximate)

Applications

• Medium Power Switching or Amplification Applications

• AF driver and output stages

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

BCX51TA AA 7 12 1,000

BCX5110TA AC 7 12 1,000

BCX5116TA AD 7 12 1,000

BCX52TA AE 7 12 1,000

BCX5210TA AG 7 12 1,000

BCX5216TA AM 7 12 1,000

BCX53TA AH 7 12 1,000

BCX5310TA AK 7 12 1,000

BCX5316TA AL 7 12 1,000

BCX5316TC AL 13 12 4,000

BCX5316-13R AL 13 12 4,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website http://www.diodes.com

Marking Information

xx = Product Type Marking Code, as follows:

BCX51 = AA BCX52 = AE BCX53 = AH

BCX5110 = AC BCX5210 = AG BCX5310 = AK

BCX5116 = AD BCX5316 = AM BCX5316 = AL

C

E

B

Top View Device Symbol Top View

Pin-Out

SOT89

C

E

C

B

xx

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Datasheet Number: DS35368 Rev. 2 – 2 2 of 7

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Maximum Ratings @ TA = 25°C unless otherwise specified

Characteristic Symbol BCX51 BCX52 BCX53 Unit

Collector-Base Voltage VCBO -45 -60 -100 V

Collector-Emitter Voltage VCEO -45 -60 -80 V

Emitter-Base Voltage VEBO -5 V

Continuous Collector Current IC -1 A

Peak Pulse Collector Current ICM -1.5

Continuous Base Current IB -100 mA

Peak Pulse Base Current IBM -200

Thermal Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) PD1 W

Thermal Resistance, Junction to Ambient (Note 4) RθJA 124 °C/W

Thermal Resistance, Junction to Leads (Note 5) RθJL 10.0 °C/W

Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C

Notes: 4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the dev ice is measured

when operating in a steady-state condition.

5. Thermal resistance from junctio n to solder-point (on the exposed collector pad).

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Thermal Characteristics

0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0 25mm x 25mm 1oz Cu

D era tin g Cu rve

Temperature (°C)

Max P ower Di ssipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

120 25mm x 25mm 1oz Cu

Tamb = 25°C

Transient Thermal Imp eda nce

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Th e rm al Resistance ( ° C/W)

Pu l se Width (s) 100µ 1m 10m 100m 1 10 100 1k

1

10

100 25mm x 25mm 1oz Cu

Tamb = 25°C

Single pulse

Pulse Power Dissipation

Pu lse Width (s)

Max Po wer Dissip at i on (W)

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Datasheet Number: DS35368 Rev. 2 – 2 4 of 7

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Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base

Breakdown Voltage

BCX51 BVCBO -45 - - V

IC = -100µA

BCX52 -60

BCX53 -100

Collector-Emitter

Breakdown Voltage (Note 6)

BCX51 BVCEO -45 - - V

IC = -10mA

BCX52 -60

BCX53 -80

Emitter-Base Breakdown Voltage BVEBO -5 - - V

IE = -10µA

Collector Cut-off Current ICBO - -

-0.1

-20 µA VCB = -30V

VCB = -30V, TA = 150°C

Emitter Cut-off Current IEBO - - -20 nA

VEB = -4V

Static Forward Current Transfer Ratio (Note 6) All versions hFE

25

40

25

-

250

-

IC = -5mA, VCE = -2V

IC = -150mA, VCE = -2V

IC = -500mA, VCE = -2V

10 gain grp 63 - 160 IC = -150mA, VCE = -2V

16 gain grp 100 - 250 IC = -150mA, VCE = -2V

Collector-Emitter Saturation Voltage (Note 6) VCE

(

sat

)

- - -0.5 V

IC = -500mA, IB = -50mA

Base-Emitter Turn-On Voltage (Note 6) VBE

(

on

)

- - -1.0 V

IC = -500mA, VCE = -2V

Transition Frequency fT 150 - - MHz

IC = -50mA, VCE = -10V

f = 100MHz

Output Capacitance Cobo - - 25 pF

VCB = -10V, f = 1MHz

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

0

0.2

0.4

0.6

0.8

1.0

012345

-V , COLLECTOR-EMITTER VOLT AGE (V)

CE

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

I = 2mA

B

I = 4mA

B

I = 6mA

B

I = 8mA

B

I = 10mA

B

Fig. 1 Typical Collector Current

vs. C ollector -Em i tter Volt age

0

100

200

300

400

500

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

h, D

C

U

R

EN

T

G

AIN

FE

Fig. 2 Typical DC Current Gain vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -5V

CE

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0

0.2

0.4

0.6

0.8

1.0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT(A)

C

-V , BASE-EMI

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E (V)

BE(ON)

Fig 3 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -2V

CE

0

0.1

0.2

0.3

0.4

0.5

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V ,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURA TION VOLT AGE (V)

CE(SAT)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. C ollect or Cu r r ent

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

Fig. 5 T y pical Base-Emitter Saturation Vo ltage

vs. Col lector Cu r rent

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I / I = 10

CB

0

50

100

150

200

250

300

020406080100

-I , COLLECTOR CURRENT (mA)

C

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current

V = -5V

CE

f = 100MHz

0

20

40

60

80

100

120

140

160

010203040

V , REVERSE VOLT AGE (V)

R

CAPACITANCE(pF)

Fig. 7 Typical Capacitance Characteristics

C

obo

C

ibo

f = 1MHz

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Datasheet Number: DS35368 Rev. 2 – 2 6 of 7

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Package Outline Dimensions

Suggested Pad Layout

SOT89

Dim Min Max

A 1.40 1.60

B 0.44 0.62

B1 0.35 0.54

C 0.35 0.43

D 4.40 4.60

D1 1.52 1.83

E 2.29 2.60

e 1.50 Typ

e1 3.00 Typ

H 3.94 4.25

L 0.89 1.20

All Dimensions in mm

Dimensions Value (in mm)

X 0.900

X1 1.733

X2 0.416

Y 1.300

Y1 4.600

Y2 1.475

Y3 0.950

Y4 1.125

C 1.500

e

D

H

L

A

C

E

8° (4X)

B1

B

D1

R0.200

e1

Y1

X1

Y2

Y

C

X (3 x)

Y3 Y4

X2 (2x)

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Datasheet Number: DS35368 Rev. 2 – 2 7 of 7

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IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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