TIP127
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-005,D
ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 5 V
Collector Current IC 5 A
TO-126 40 W
Power Dissipation TO-220 PD 65 W
Junction Temperature TJ 150 °C
Operating Temperature TOPR -20 ~ +85 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCEO I
C=100mA 100 V
Collector Cut-Off Current ICBO V
CB=100V 200 uA
Collector-Cut-Off Current ICEO V
CE=50V 500 uA
Emitter Cut-Off Current IEBO V
EB=5V 2 mA
Collector-Emitter Saturation Voltage VCE(SAT)1 I
C=3A, IB=12mA 2 V
Collector-Emitter Saturation Voltage VCE(SAT)2 I
C=5A, IB=20mA 4 V
Base-Emitter Saturation Voltage VBE(ON) V
CE=3V, IC=3A 2.5 V
DC Current Gain hFE IC=500mA, VCE=3V
IC=3A, VCE=3V 1 K