PD-96963 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF597130 100V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHF597130 100K Rads (Si) IRHF593130 300K Rads (Si) RDS(on) ID 0.24 -6.7A 0.24 -6.7A TO-39 International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC=25C ID @ VGS = -12V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight Units -6.7 -4.3 -26.8 25 0.2 20 240 -6.7 2.5 -17 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 (0.063 in./1.6 mm from case for 10s) 0.98 (Typical ) g For footnotes refer to the last page www.irf.com 1 09/26/05 IRHF597130 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 4.3 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- Typ Max Units Test Conditions -- -- V VGS = 0V, ID = -1.0mA -0.13 -- V/C Reference to 25C, ID = -1.0mA -- 0.24 -- -- -- -- -4.0 -- -10 -25 V S( ) -- -- -- -- -- -- -- -- -- 7.0 -100 100 40 16 11 25 50 45 125 -- BVDSS A nA nC ns VGS = -12V, ID = -4.3A A VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -4.3A A VDS = -80V ,VGS = 0V VDS = -80V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -6.7A VDS = -50V VDD = -50V, ID = -6.7A VGS =-12V, RG = 7.5 nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance -- -- -- -- 1250 318 28 8.0 -- -- -- -- pF VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- -6.7 -26.8 -5.0 150 408 Test Conditions A V ns nC T j = 25C, IS = -6.7A, VGS = 0V A Tj = 25C, IF = -6.7A, di/dt -100A/s VDD -50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units -- -- -- -- 5.0 175 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHF597130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance(TO-39) Diode Forward Voltage A Units Test Conditions 100K Rads(Si)1 Min Max 300KRads(Si)2 Min Max -100 -2.0 -- -- -- -- -- -4.0 -100 100 -10 0.205 -100 -2.0 -- -- -- -- -- -4.0 -100 100 -10 0.205 nA A VGS = 0V, ID = -1.0mA V GS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID = -4.3A -- 0.24 -- 0.24 VGS = -12V, ID = -4.3A -- -5.0 -- -5.0 V VGS = 0V, IS = -6.7A V 1. Part number IRHF597130 2. Part number IRHF593130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 -- -- Energy (MeV) 252.6 314 350 -120 -100 VDS -80 -60 Br -40 I Au -20 0 0 5 10 15 20 25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF597130 Pre-Irradiation 100 VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 10 -5.0V 1 60s PULSE WIDTH Tj = 25C 0.1 10 1 60s PULSE WIDTH Tj = 150C 1 10 100 0.1 -VDS , Drain-to-Source Voltage (V) 1 10 100 -V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 2.5 T J = 25C T J = 150C 10 VDS = -25V 15 WIDTH 60s PULSE 1 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) -5.0V 0.1 0.1 ID = -6.7A 2.0 1.5 1.0 VGS = -12V 0.5 5 6 7 8 9 10 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 2000 20 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 1200 Coss 800 400 Crss 0 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 5 -VDS, Drain-to-Source Voltage (V) -ID, Drain-to-Source Current (A) -I SD , Reverse Drain Current (A) 100 TJ = 150C T J = 25C 1 3 4 5 6 -V SD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 25 30 35 40 7 100s 1ms 1 0.1 0.1 2 20 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 VGS = 0V 1 15 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 0 10 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 VDS= -80V VDS= -50V VDS= -20V ID = -6.7A -VGS, Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) IRHF597130 10ms Tc = 25C Tj = 150C Single Pulse 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHF597130 Pre-Irradiation 7 V GS 6 D.U.T. RG 5 -I D, Drain Current (A) RD V DS - + V DD V GS 4 Pulse Width 1 s Duty Factor 0.1 % 3 Fig 10a. Switching Time Test Circuit 2 td(on) 1 tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 T C , Case Temperature (C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.1 0.01 0.00001 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHF597130 L 600 - D.U.T RG VGS -20V + IAS tp VVDD DD DRIVER A 0.01 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) VDS ID -3.0A -4.2A BOTTOM -6.7A TOP 500 400 300 200 100 0 I AS 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -12 V QGS 50K -12V 12V .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHF597130 Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = -25V, starting TJ = 25C, L =10.6mH Peak IL = -6.7A, VGS = -12V A ISD -6.7A, di/dt -530A/s, VDD -100V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- TO-205AF(Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/05 8 www.irf.com