Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC=25°C Continuous Drain Current -6.7
ID @ VGS = -12V, TC=100°C Continuous Drain Current -4.3
IDM Pulsed Drain Current À-26.8
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á240 mJ
IAR Avalanche Current À-6.7 A
EAR Repetitive Avalanche Energy À2.5 mJ
dv/dt Peak Diode Recovery dv/dt Â-17 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in./1.6 mm from case for 10s)
Weight 0.98 (Typical ) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
oC
A
RADIATION HARDENED IRHF597130
POWER MOSFET
THRU-HOLE (TO-39)
09/26/05
www.irf.com 1
100V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF597130 100K Rads (Si) 0.24Ω -6.7A
IRHF593130 300K Rads (Si) 0.24Ω -6.7A
For footnotes refer to the last page
55
TO-39
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nCeramic Package
nLight Weight
PD-96963
IRHF597130 Pre-Irradiation
2www.irf.com
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -6.7
ISM Pulse Source Current (Body Diode) À— — -26.8
VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -6.7A, VGS = 0V Ã
trr Reverse Recovery Time — — 150 ns Tj = 25°C, IF = -6.7A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 408 nC VDD ≤ -50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.13 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.24 ΩVGS = -12V, ID = -4.3A
Resistance
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 4.3 — — S ( ) VDS = -15V, IDS = -4.3A Ã
IDSS Zero Gate Voltage Drain Current — — -10 VDS = -80V ,VGS = 0V
— — -25 VDS = -80V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 40 VGS =-12V, ID = -6.7A
Qgs Gate-to-Source Charge — — 16 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 11
td(on) Turn-On Delay Time — — 25 VDD = -50V, ID = -6.7A
trRise Time — — 50 VGS =-12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 45
tfFall Time — — 125
LS + LDTotal Inductance — 7.0 — Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance — 1250 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 318 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 28 —
RgInternal Gate Resistance — 8.0 — Ω f = 1.0MHz, open drain
nA
Ω
Ã
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 5.0
RthJA Junction-to-Ambient — — 175 °C/W Typical socket mount
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Pre-Irradiation IRHF597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter 100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -4.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V
IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS = -80V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.205 — 0.205 Ω VGS = -12V, ID = -4.3A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source à — 0.24 — 0.24 Ω VGS = -12V, ID = -4.3A
On-State Resistance(TO-39)
VSD Diode Forward Voltage à — -5.0 — -5.0 V VGS = 0V, IS = -6.7A
1. Part number IRHF597130
2. Part number IRHF593130
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V
Br 37.9 252.6 33.1 -100 -100 -100 -100 -100
I 59.7 314 30.5 -100 -100 -100 -100 -75
Au 82.3 350 28.4 -100 -100 -100 -30 —
-100
-25
—
@VGS=20V
-120
-100
-80
-60
-40
-20
0
0 5 10 15 20 25
VGS
VDS
Br
I
Au
IRHF597130 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V -5.0V
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V -5.0V
5678910
-VGS, Gate-to-Source Voltage (V)
1
10
100
-ID, Drain-to-Source Current (A)
VDS = -25V
60µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS = -12V
ID = -6.7A
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Pre-Irradiation IRHF597130
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
01234567
-VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
-ISD , Reverse Drain Current (A)
VGS = 0V
TJ = 150°C
TJ = 25°C
110 100
-VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
C, Capacitance (pF)
VGS = 0V, f = 1 MHz
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
0
4
8
12
16
20
-VGS, Gate-to-Source Voltage (V)
VDS= -80V
VDS= -50V
VDS= -20V
ID = -6.7A
FOR TEST CIRCUIT
SEE FIGURE 13
1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
IRHF597130 Pre-Irradiation
6www.irf.com
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150
TC , Case Temperature (°C)
0
1
2
3
4
5
6
7
-ID, Drain Current (A)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Pre-Irradiation IRHF597130
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
QG
QGS QGD
VG
Charge
-12 V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tp
V
(
BR
)
DSS
I
AS
VGS
VDD
+
-
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -3.0A
-4.2A
BOTTOM -6.7A
IRHF597130 Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L =10.6mH
Peak IL = -6.7A, VGS = -12V
 ISD ≤ -6.7A, di/dt ≤ -530A/µs,
VDD ≤ -100V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/05
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
