IRF7103Q-HR - INTERNATIONAL RECTIFIER

HEXFET® Power MOSFET

Specifically designed for Automotive applications, these

HEXFET® Power MOSFET's in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits combine

to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other

applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it ideal

in a variety of power applications. This dual, surface mount

SO-8 can dramatically reduce board space and is also available

in Tape & Reel.

Absolute Maximum Ratings

Description

03/25/09

www.irf.com 1

Advanced Process Technology

Dual N-Channel MOSFET

Ultra Low On-Resistance

175°C Operating Temperature

Repetitive Avalanche Allowed up to Tjmax

Automotive [Q101] Qualified

Benefits

Typical Applications

Anti-lock Braking Systems (ABS)

Electronic Fuel Injection

Power Doors, Windows & Seats

AUTOMOTIVE MOSFET

PD - 93944D

IRF7103Q

VDSS RDS(on) max (mW) ID

50V 130@VGS = 10V 3.0A

200@VGS = 4.5V 1.5A

Symbol Parameter Typ. Max. Units

RθJL Junction-to-Drain Lead ––– 20

RθJA Junction-to-Ambient ––– 62.5 °C/W

Thermal Resistance

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 3.0

ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V 2.5 A

IDM Pulsed Drain Current 25

PD @TC = 25°C Power Dissipation2.4 W

Linear Derating Factor 16 mW/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy22 mJ

IAR Avalanche CurrentSee Fig.16c, 16d, 19, 20 A

EAR Repetitive Avalanche EnergymJ

dv/dt Peak Diode Recovery dv/dt 12 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C

Top View

SO-8

IRF7103Q

2www.irf.com

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.5A, VGS = 0V 

trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.5A

Qrr Reverse Recovery Charge ––– 45 67 nC di/dt = 100A/µs 

Source-Drain Ratings and Characteristics



3.0



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 Surface mounted on 1 in square Cu board

 Starting TJ = 25°C, L = 4.9mH

RG = 25Ω, IAS = 3.0A. (See Figure 12).

ISD ≤ 2.0A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive

avalanche performance.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 130 VGS = 10V, ID = 3.0A 

––– ––– 200 VGS = 4.5V, ID = 1.5A 

VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA

gfs Forward Transconductance 3.4 ––– ––– S VDS = 15V, ID = 3.0A

––– ––– 2.0 VDS = 40V, VGS = 0V

––– ––– 25 VDS = 40V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

QgTotal Gate Charge ––– 10 15 ID = 2.0A

Qgs Gate-to-Source Charge ––– 1.2 ––– nC VDS = 40V

Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 ––– VGS = 10V

td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 25V 

trRise Time ––– 1.7 ––– ID = 1.0A

td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω

tfFall Time ––– 2.3 ––– RD = 25Ω

Ciss Input Capacitance ––– 255 ––– VGS = 0V

Coss Output Capacitance ––– 69 ––– pF VDS = 25V

Crss Reverse Transfer Capacitance ––– 29 ––– ƒ = 1.0MHz

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

mΩ

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

IRF7103Q

www.irf.com 3

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

3.0A

3.0 6.0 9.0 12.0 15.0

VGS, Gate-to-Source Voltage (V)

1.00

10.00

100.00

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 25V

20µs PULSE WIDTH

0.1 110 100

VDS , Drain-to-Source Voltage (V)

100

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

IRF7103Q

4www.irf.com

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

0.4 0.6 0.8 1.0 1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 175 C

J°

T = 25 C

J°

0 1 10 100 1000

VDS , Drain-toSource Voltage (V)

0.01

0.1

100

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

0 3 6 9 12

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

D2.0A

V = 10V

V = 25V

V = 40V

110 100

VDS , Drain-to-Source Voltage (V)

100

1000

10000

C, Capacitance(pF)

Cos s

Crs s

Ciss

VGS = 0V, f = 1 MHZ

Ciss

= C

gs + C

gd , C

ds SHORTED

Crss

= C

Coss

= C

ds + C

IRF7103Q

www.irf.com 5

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

25 50 75 100 125 150 175

0.0

0.6

1.2

1.8

2.4

3.0

T , Case Temperature ( C)

I , Drain Current (A)

1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

100

Thermal Response ( Z thJA ) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + TA

IRF7103Q

6www.irf.com

Fig 13. Typical On-Resistance Vs. Drain

Current

Fig 12. Typical On-Resistance Vs. Gate

Voltage

Fig 14. Typical Threshold Voltage Vs.

Junction Temperature

Fig 15. Typical Power Vs. Time

4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0

-VGS, Gate -to -Source Voltage (V)

0.09

0.10

0.11

0.12

0.13

0.14

0.15

RDS(on), Drain-to -Source On Resistance (Ω)

ID = 3.0A

-75 -50 -25 025 50 75 100 125 150

TJ , Temperature ( °C )

1.0

1.3

1.5

1.8

2.0

VGS(th) Gate threshold Voltage (V)

ID = 250µA

0 5 10 15 20 25 30 35 40

ID , Drain Current (A)

0.000

0.500

1.000

1.500

2.000

2.500

RDS (on) , Drain-to-Source On Resistance (

Ω)

VGS = 10V

VGS = 4. 5V

1.00 10.00 100.00 1000.00

Time (sec)

Power (W)

IRF7103Q

www.irf.com 7

QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Fig 17. Gate Charge Test Circuit Fig 18. Basic Gate Charge Waveform

Fig 16a. Maximum Avalanche Energy

Vs. Drain Current

Fig 16d. Unclamped Inductive Waveforms

Fig 16c. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

1.2A

2.5A

3.0A

IRF7103Q

8www.irf.com

Fig 19. Typical Avalanche Current Vs.Pulsewidth

Fig 20. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

1.0E-08 1.0E- 07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01

tav (sec)

0.01

0.1

100

1000

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses

0.01

0.10

25 50 75 100 125 150 175

Starting T

J , Junction Temperature (°C)

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 10% Duty Cy cle

= 3.0A

IRF7103Q

www.irf.com 9

SO-8 Package Details

SO-8 Part Marking

H

(

$









%$6,&















































%$6,&

















0,1 0$;

0,//,0(7(56,1&+(6

0,1 0$;

',0



F    

%$6,& %$6,&







' %

(

;

>@ $





.[

;/ ;F

>@ & $ %

H $

$

;E

>@



)22735,17

;>@

>@

;>@

287/,1(&21)250672-('(&287/,1(06$$

127(6

',0(16,21,1*72/(5$1&,1*3(5$60(<0

&21752//,1*',0(16,210,//,0(7(5

',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@

',0(16,21'2(6127,1&/8'(02/'3527586,216

',0(16,21'2(6127,1&/8'(02/'3527586,216

02/'3527586,21612772(;&(('>@

',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72

$68%675$7(

02/'3527586,21612772(;&(('>@

;>@

(;$03/(7+,6,6$1,5)026)(7

,17(51$7,21$/

5(&7,),(5

/2*2

)

<::

;;;;

3$57180%(5

/27&2'(

:: :((.

< /$67',*,72)7+(<($5

'$7(&2'(<::

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7103Q

10 www.irf.com

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/02

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/