MBT3946DW1T1G - ON SEMICONDUCTOR

July, 2012 − Rev. 7

1Publication Order Number:

MBT3946DW1T1/D

MBT3946DW1T1G,

SMBT3946DW1T1G

Complementary General

Purpose Transistor

The MBT3946DW1T1G device is a spin-off of our popular

SOT−23/SOT−323 three-leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT−363−6

surface mount package. By putting two discrete devices in one

package, this device is ideal for low-power surface mount applications

where board space is at a premium.

Features

•hFE, 100−300

•Low VCE(sat), ≤0.4 V

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

Table 1. MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

(NPN)

(PNP)

VCEO 40

−40

Vdc

Collector −Base Voltage

(NPN)

(PNP)

VCBO 60

−40

Vdc

Emitter−Base Voltage

(NPN)

(PNP)

VEBO 6.0

−5.0

Vdc

Collector Current − Continuous

(NPN)

(PNP)

IC200

−200

mAdc

Electrostatic Discharge ESD HBM Class 2

MM Class B

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Table 2. THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Package Dissipation (Note 1)

TA = 25°C

PD150 mW

Thermal Resistance,

Junction-to-Ambient

RqJA 833 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

SOT−363/SC−88

CASE 419B

STYLE 1

(1)(2)

(3)

(4) (5) (6)

MBT3946DW1T1*

*Q1 PNP

Q2 NPN

http://onsemi.com

46 M G

46 = Specific Device Code

M = Date Code

G= Pb-Free Package

MARKING DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

SC−88

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3,000 /

Tape & Reel

3,000 /

Tape & Reel

SC−88

(Pb-Free)

MBT3946DW1T1G

MBT3946DW1T2G

(Note: Microdot may be in either location)

SC−88

(Pb-Free)

3,000 /

Tape & Reel

SMBT3946DW1T1G

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0) (NPN)

(IC = −1.0 mAdc, IB = 0) (PNP)

V(BR)CEO 40

−40

−

Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0) (NPN)

(IC = −10 mAdc, IE = 0) (PNP)

V(BR)CBO 60

−40

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) (NPN)

(IE = −10 mAdc, IC = 0) (PNP)

V(BR)EBO 6.0

−5.0

−

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN)

(VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP)

IBL

−

−50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN)

(VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP)

ICEX

−

−50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) (NPN)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = −0.1 mAdc, VCE = −1.0 Vdc) (PNP)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

hFE 40

100

−

300

−

300

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) (NPN)

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = −10 mAdc, IB = −1.0 mAdc) (PNP)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

0.2

0.3

−0.25

−0.4

Vdc

Base −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) (NPN)

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = −10 mAdc, IB = −1.0 mAdc) (PNP)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat) 0.65

−

−0.65

−

0.85

0.95

−0.85

−0.95

Vdc

SMALL- SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (NPN)

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) (PNP)

fT300

250

−

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN)

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP)

Cobo

−

4.0

4.5

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN)

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) (PNP)

Cibo

−

8.0

10.0

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)

hie 1.0

2.0

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)

hre 0.5

0.1

8.0

X 10−4

Small−Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)

hfe 100

100

400

−

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

Table 4. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Max Unit

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN)

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) (PNP)

hoe 1.0

3.0

mmhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (NPN)

(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (PNP)

−

5.0

4.0

SWITCHING CHARACTERISTICS

Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) (NPN)

(VCC = −3.0 Vdc, VBE = 0.5 Vdc) (PNP)

td−

−

Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (NPN)

(IC = −10 mAdc, IB1 = −1.0 mAdc) (PNP)

tr−

−

Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (NPN)

(VCC = −3.0 Vdc, IC = −10 mAdc) (PNP)

ts−

−

200

225

Fall Time (IB1 = IB2 = 1.0 mAdc) (NPN)

(IB1 = IB2 = −1.0 mAdc) (PNP)

tf−

−

2. Pulse Test: Pulse WidthĂ≤Ă300Ăms; Duty CycleĂ≤Ă2.0%.

(NPN)

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916 Cs < 4 pF*

+3 V

275

10 k

Cs < 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V′

+10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

Cibo

Cobo

TJ = 25°C

TJ = 125°C

(NPN) (NPN)

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

(NPN)

Figure 5. Turn-On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

Figure 6. Rise Time

IC, COLLECTOR CURRENT (mA)

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

t , RISE TIME (ns)

Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

t , STORAGE TIME (ns)

′

VCC = 40 V

IC/IB = 10

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

IC/IB = 10

IC/IB = 20

IC/IB = 10

IC/IB = 20

t′s = ts - 1/8 tf

IB1 = IB2

(NPN) (NPN)

TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 9. Noise Figure

f, FREQUENCY (kHz)

0.1

Figure 10. Noise Figure

RS, SOURCE RESISTANCE (k OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

SOURCE RESISTANCE = 500 W

IC = 100 mA

SOURCE RESISTANCE = 1.0 k

IC = 50 mA

(NPN) (NPN)

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

(NPN)

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 11. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 12. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , CURRENT GAIN

h , OUTPUT ADMITTANCE ( mhos)

Figure 13. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 14. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5 10

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (x 10 )

h , INPUT IMPEDANCE (k OHMS)

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

-4

(NPN) (NPN)

Figure 15. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

10 100

100

1000

IC, COLLECTOR CURRENT (mA)

Single Pulse Test at TA = 25°C

(NPN)

1 s

1 ms

10 ms

100 ms

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

(NPN)

TYPICAL STATIC CHARACTERISTICS

Figure 16. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

h , DC CURRENT GAIN (NORMALIZED)

0.5 2.0 3.0 10 50 70

0.2 0.3

0.1 100

1.00.7 200

30205.0 7.0

VCE = 1.0 V

TJ = +125°C

+25°C

-55°C

(NPN)

Figure 17. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

(NPN)

Figure 18. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

1.2

0.2

Figure 19. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

0100

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100

COEFFICIENT (mV/ C)

200

-1.0

-1.5

-2.0

200

TJ = 25°C

VBE(sat) @ IC/IB =10

VCE(sat) @ IC/IB =10

VBE @ VCE =1.0 V

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

(NPN) (NPN)

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

(PNP)

Figure 20. Delay and Rise Time

Equivalent Test Circuit

Figure 21. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916 Cs < 4 pF*

3 V

275

10 k

Cs < 4 pF*

< 1 ns

+0.5 V

10.6 V 300 ns

DUTY CYCLE = 2%

< 1 ns

+9.1 V

10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

Figure 22. Capacitance

REVERSE BIAS (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

Figure 23. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

Cibo

Cobo

TJ = 25°C

TJ = 125°C

(PNP) (PNP)

Figure 24. Turn-On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

Figure 25. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

(PNP) (PNP)

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

(PNP)

TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 26.

f, FREQUENCY (kHz)

2.0

3.0

4.0

5.0

1.0

0.1

Figure 27.

Rg, SOURCE RESISTANCE (k OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

SOURCE RESISTANCE = 2.0 k

IC = 100 mA

SOURCE RESISTANCE = 2.0 k

IC = 50 mA

(PNP) (PNP)

h PARAMETERS

(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 28. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 29. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , DC CURRENT GAIN

h , OUTPUT ADMITTANCE ( mhos)

Figure 30. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 31. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5 10

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

h , INPUT IMPEDANCE (k OHMS)

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.7 7.0

7.0

3.0

0.7

0.3

0.7 7.0

h , VOLTAGE FEEDBACK RATIO (x 10 )

re -4

(PNP) (PNP)

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

(PNP)

TYPICAL STATIC CHARACTERISTICS

Figure 32. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

h , DC CURRENT GAIN (NORMALIZED)

0.5 2.0 3.0 10 50 70

0.2 0.3

0.1 100

1.00.7 200

30205.0 7.0

VCE = 1.0 V

TJ = +125°C

+25°C

-55°C

(PNP)

Figure 33. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

(PNP)

Figure 34. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 35. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

0100

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100 200

-1.0

-1.5

-2.0

200

TJ = 25°C VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

, TEMPERATURE COEFFICIENTS (mV/ C)°

(PNP) (PNP)

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

Figure 36. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

110 100

100

1000

IC, COLLECTOR CURRENT (mA)

Single Pulse Test at TA = 25°C

(PNP)

1 s

1 ms

100 ms 1 ms10 ms

MBT3946DW1T1G, SMBT3946DW1T1G

http://onsemi.com

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

ǒmm

inchesǓ

SCALE 20:1

0.65

0.025

0.65

0.025

0.50

0.0197

0.40

0.0157

1.9

0.0748

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

E0.2 (0.008) MM

123

654

−E−

b6 PL

DIM MIN NOM MAX

MILLIMETERS

A0.80 0.95 1.10

A1 0.00 0.05 0.10

b0.10 0.21 0.30

C0.10 0.14 0.25

D1.80 2.00 2.20

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

MIN NOM MAX

INCHES

0.20 REF 0.008 REF

E1.15 1.25 1.35

e0.65 BSC

L0.10 0.20 0.30

2.00 2.10 2.20

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

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