MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) Q1 Q2 (4) (5) Symbol Collector -Emitter Voltage (NPN) (PNP) VCEO Collector - Base Voltage (NPN) (PNP) VCBO Emitter -Base Voltage (NPN) (PNP) VEBO Collector Current - Continuous (NPN) (PNP) Electrostatic Discharge IC ESD Value Unit Vdc 40 -40 Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range mAdc 200 -200 HBM Class 2 MM Class B Symbol Max Unit PD 150 mW RqJA 833 C/W TJ, Tstg -55 to +150 C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. (c) Semiconductor Components Industries, LLC, 2012 July, 2012 - Rev. 7 46 M G G Vdc 6.0 -5.0 Table 2. THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM Vdc 60 -40 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Total Package Dissipation (Note 1) TA = 25C (6) MBT3946DW1T1* *Q1 PNP Q2 NPN Table 1. MAXIMUM RATINGS Rating (1) 1 46 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping MBT3946DW1T1G SC-88 (Pb-Free) 3,000 / Tape & Reel SMBT3946DW1T1G SC-88 (Pb-Free) 3,000 / Tape & Reel MBT3946DW1T2G SC-88 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBT3946DW1T1/D MBT3946DW1T1G, SMBT3946DW1T1G Table 3. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 40 -40 - - 60 -40 - - 6.0 -5.0 - - - - 50 -50 - - 50 -50 40 70 100 60 30 - - 300 - - 60 80 100 60 30 - - 300 - - - - 0.2 0.3 - - -0.25 -0.4 0.65 - 0.85 0.95 -0.65 - -0.85 -0.95 300 250 - - - - 4.0 4.5 - - 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) (NPN) (PNP) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = -10 mAdc, IE = 0) (NPN) (PNP) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = -10 mAdc, IC = 0) (NPN) (PNP) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) (NPN) (PNP) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) (NPN) (PNP) V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (NPN) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE (PNP) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (NPN) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) (PNP) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (NPN) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) (PNP) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) (NPN) (PNP) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) (NPN) (PNP) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) (NPN) (PNP) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Small -Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) http://onsemi.com 2 fT Cobo Cibo hie hre hfe MHz pF pF kW X 10- 4 - MBT3946DW1T1G, SMBT3946DW1T1G Table 4. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (continued) Symbol Characteristic Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) (NPN) (PNP) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (NPN) (PNP) hoe NF Min Max 1.0 3.0 40 60 - - 5.0 4.0 Unit mmhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (NPN) (PNP) td - - 35 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (NPN) (PNP) tr - - 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (NPN) (PNP) ts - - 200 225 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) (NPN) (PNP) tf - - 50 75 ns ns 2. Pulse Test: Pulse Width300ms; Duty Cycle2.0%. (NPN) DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 +3 V t1 +10.9 V DUTY CYCLE = 2% 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns Cs < 4 pF* 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 (NPN) Cibo 3.0 Cobo 2.0 (NPN) VCC = 40 V IC/IB = 10 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 3000 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 70 50 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 3 200 MBT3946DW1T1G, SMBT3946DW1T1G (NPN) 500 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) TIME (ns) 300 200 40 V 100 70 50 30 20 15 V 10 7 5 10 (NPN) 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time IC/IB = 10 200 500 ts = ts - 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 t f , FALL TIME (ns) t s , STORAGE TIME (ns) IC/IB = 20 200 (NPN) IC, COLLECTOR CURRENT (mA) 500 300 200 7 5 100 70 IC/IB = 20 50 IC/IB = 10 30 20 10 7 5 IC/IB = 10 30 20 10 (NPN) 1.0 100 70 50 2.0 3.0 5.0 7.0 10 20 30 50 70 100 7 5 200 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 (NPN) 4.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 20 40 0 100 (NPN) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure http://onsemi.com 4 40 100 MBT3946DW1T1G, SMBT3946DW1T1G (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 h fe , CURRENT GAIN (NPN) 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 (NPN) 50 20 10 5 2 1 10 0.1 0.2 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) (NPN) 7.0 100 ms 100 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 ms 1 ms 1s (NPN) Single Pulse Test at TA = 25C 1 10 5.0 1 ms 1 5.0 (NPN) Figure 14. Voltage Feedback Ratio 1000 10 10 10 Figure 13. Input Impedance IC, COLLECTOR CURRENT (mA) h ie , INPUT IMPEDANCE (k OHMS) 20 0.2 5.0 Figure 12. Output Admittance Figure 11. Current Gain 10 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 15. Safe Operating Area http://onsemi.com 5 100 MBT3946DW1T1G, SMBT3946DW1T1G h FE, DC CURRENT GAIN (NORMALIZED) (NPN) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V (NPN) +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 16. DC Current Gain 1.0 TJ = 25C (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 17. Collector Saturation Region 1.0 1.2 TJ = 25C (NPN) (NPN) VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C qVB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 18. "ON" Voltages Figure 19. Temperature Coefficients http://onsemi.com 6 180 200 MBT3946DW1T1G, SMBT3946DW1T1G (PNP) 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% Cs < 4 pF* 1N916 10 < t1 < 500 ms 10.9 V t1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 20. Delay and Rise Time Equivalent Test Circuit Figure 21. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 5000 10 (PNP) Cobo 5.0 VCC = 40 V IC/IB = 10 3000 2000 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 Cibo 3.0 2.0 (PNP) 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 22. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 23. Charge Data 500 500 IC/IB = 10 (PNP) 300 200 (PNP) 300 200 VCC = 40 V IB1 = IB2 tr @ VCC = 3.0 V 15 V 30 20 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 24. Turn-On Time Figure 25. Fall Time http://onsemi.com 7 200 MBT3946DW1T1G, SMBT3946DW1T1G (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 IC = 0.5 mA 8 6 4 IC = 50 mA 2 IC = 100 mA (PNP) (PNP) 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 26. 40 100 Figure 27. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 h fe , DC CURRENT GAIN (PNP) 200 100 70 50 (PNP) 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 h ie , INPUT IMPEDANCE (k OHMS) 20 (PNP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 29. Output Admittance hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 28. Current Gain 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 10 7.0 (PNP) 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 30. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 31. Voltage Feedback Ratio http://onsemi.com 8 MBT3946DW1T1G, SMBT3946DW1T1G (PNP) h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 (PNP) 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 32. DC Current Gain 1.0 TJ = 25C (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 33. Collector Saturation Region TJ = 25C V, VOLTAGE (VOLTS) 0.8 q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 (PNP) 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 0 +25C TO +125C -55C TO +25C (PNP) -0.5 +25C TO +125C -1.0 -55C TO +25C qVB FOR VBE(sat) -1.5 -2.0 200 qVC FOR VCE(sat) 0 Figure 34. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 35. Temperature Coefficients http://onsemi.com 9 180 200 MBT3946DW1T1G, SMBT3946DW1T1G 1 ms IC, COLLECTOR CURRENT (mA) 1000 100 ms 100 10 ms 1 ms 1s (PNP) 10 1 Single Pulse Test at TA = 25C 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 36. Safe Operating Area http://onsemi.com 10 100 MBT3946DW1T1G, SMBT3946DW1T1G PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE -E- 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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