This is information on a product in full production.
May 2015 DocID15575 Rev 3 1/17
STD86N3LH5
Automot ive-grade N-channel 30 V, 0.0045 Ω typ, 80 A STripFET H5
Power MOSFET in a DPAK package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Designed for automotive applications and
AEC-Q101 qualified
•Low on-resistance R
DS(on)
•High avalanche ruggedness
•Low gate drive power losses
Application
•Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
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Order code V
DSS
R
DS(on)
max I
D
STD86N3LH5 30 V < 0.005 Ω80 A
Table 1. Device summary
Order code Marking Package Packaging
STD86N3L H 5 86N3LH5 DPAK Tape and reel
www.st.com
Contents STD86N3LH5
2/17 DocID15575 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Elect rical char acteristics (curv e s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DocID15575 Rev 3 3/17
STD86N3LH5 Electrical ratings
17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0 V) 30 V
V
DS
Drain-source voltage (V
GS
= 0 V) @ T
JMAX
35 V
V
GS
Gate-s ourc e vol t ag e ± 20 V
I
D (1)
1. Limited by wire bonding
Drain current (continuous) at T
C
= 25 °C 80 A
I
D
Drain current (continuous) at T
C
= 100 °C 55 A
I
DM (2)
2. Pulse width limited by safe operating area
Drai n curr ent ( pulsed) 320 A
P
TOT
Total dissi p ation at T
C
= 25 °C 70 W
Derati ng factor 0.47 W/°C
E
AS (3)
3. Starting Tj = 25°C, I
D
= 40 A, V
DD
= 25 V
Single pulse avalanche energy 165 mJ
T
stg
Storage temperature -55 to 175 °C
T
j
Max. operating junction temperature 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 2.14 °C/W
R
thj-pcb (1)
1. When mounted on 1 inch² FR-4 Oz Cu board
Thermal resistance junction-pcb max 50 °C/W
Ele ctrical characteristics STD86N3LH5
4/17 DocID15575 Rev 3
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Mi n. Typ . Max. Unit
V
(BR)DSS
Drain-sourc e breakdown
Voltage I
D
= 250 µA, V
GS
= 0 V 30 - - V
I
DSS
Zero gate voltage drain
current (V
GS
= 0 V) V
DS
= 20 V
V
DS
= 20 V,Tc = 125 °C --1
10 µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0 V) V
GS
= ± 20 V - -
±
100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 1 1.8 2.5 V
R
DS(on)
Static drain-source on-
resistance V
GS
= 10 V, I
D
= 40 A - 0.0045 0.005 Ω
V
GS
= 5 V, I
D
= 40 A - 0.0055 0.0065 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f=1 MHz,
V
GS
= 0 V
- 1850 - pF
C
oss
Out put capacitance - 380 - pF
C
rss
Reverse transfer
capacitance -58-pF
Q
g
Total gate charge V
DD
= 15 V, I
D
= 80 A
V
GS
= 5 V
Figure 16
-14-nC
Q
gs
Gate-source charge - 6.8 - nC
Q
gd
Gate-drain charge - 4.7 - nC
Q
gs1
Pre V
th
gate-to-sou rce
charge V
DD
= 15 V, I
D
= 80 A
V
GS
= 5 V
Figure 16
-2.3-nC
Q
gs2
Post V
th
gate-to-source
charge -4.5-nC
R
G
Gate input resistance f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV, open drain -1.2-Ω
DocID15575 Rev 3 5/17
STD86N3LH5 Electri cal chara ct er istics
17
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on del ay time V
DD
= 15 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 5 V
Figure 15
-6 -ns
t
r
Rise time - 14 - ns
t
d(off)
Turn-off delay time - 23.6 - ns
t
f
Fall time - 10.8 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -80
320 A
A
V
SD(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 40 A, V
GS
= 0 - 1.1 V
t
rr
Reverse recovery time I
SD
= 80 A,
di/dt = 100 A/µs,
V
DD
= 20 V
Figure 17
-31.8 ns
Q
rr
Reverse recovery charge - 26.1 nC
I
RRM
Reverse recovery current - 1.6 A
Ele ctrical characteristics STD86N3LH5
6/17 DocID15575 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe ope rating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
VDSS
vs temperature Figu re 7. Static drain-source on resistance
RDS(on)
4.5
4.0
3.5
3.0020 ID(A)
(mΩ)
10 30
5.0
5.5
6.0
6.5
VGS=10V
VGS=5V
50
40 60 70 80
AM03396v1
DocID15575 Rev 3 7/17
STD86N3LH5 Electri cal chara ct er istics
17
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs
temperature Fi gure 11. Normalized on resistance vs
temperature
Figure 12. Source -drain diode forward
characteristics
Test circuit STD86N3LH5
8/17 DocID15575 Rev 3
3 Test circuit
Figure 13. Switching times test circuit for
resistive load Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times Figure 16. Unclamped inductiv e load test circ uit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID15575 Rev 3 9/17
STD86N3LH5 Test circuit
17
Figure 19. Gate charge waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd
Package information STD86N3LH5
10/17 DocID15575 Rev 3
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
DocID15575 Rev 3 11/17
STD86N3LH5 Package information
17
Figure 20. DPAK (T O-252) type A2 outline
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Package information STD86N3LH5
12/17 DocID15575 Rev 3
Table 8. DPAK (TO-252) type A2 mechanical data
Dim. mm
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b0.64 0.90
b4 5.20 5.40
c0.45 0.60
c2 0.48 0.60
D6.00 6.20
D1 4.95 5.10 5.25
E6.40 6.60
E1 5.10 5.20 5.30
e2.162.282.40
e1 4.40 4.60
H 9.35 10.10
L1.00 1.50
L1 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R0.20
V2 0° 8°
DocID15575 Rev 3 13/17
STD86N3LH5 Package information
17
Figure 21. DPAK (TO-252) footprint
(a)
a. All dimensions are in millimeters
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Packing information STD86N3LH5
14/17 DocID15575 Rev 3
5 Packing information
Figure 22. Tape for DPAK (TO-252)
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
DocID15575 Rev 3 15/17
STD86N3LH5 Packing information
17
Figure 23. Reel for DPAK (TO-252)
Table 9. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E1.65 1.85N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T0.25 0.35
W15.7 16.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STD86N3LH5
16/17 DocID15575 Rev 3
6 Revision history
Table 10. Document revision history
Date Revision Changes
10-Apr-2009 1 First release.
22-Mar-2011 2 V
GS
value has been corrected in Table 2 and Table 4.
13-May-2015 3 Updated title, features and description in cover page.
Updated Section 4: Package information.
DocID15575 Rev 3 17/17
STD86N3LH5
17