STD86N3LH5 Automotive-grade N-channel 30 V, 0.0045 typ, 80 A STripFET H5 Power MOSFET in a DPAK package Datasheet - production data Features 7$% Order code VDSS RDS(on) max ID STD86N3LH5 30 V < 0.005 80 A * Designed for automotive applications and AEC-Q101 qualified * Low on-resistance RDS(on) * High avalanche ruggedness * Low gate drive power losses '3$. Application * Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics' STripFETTM H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. ' 7$% * 6 $0YB7DE Table 1. Device summary Order code Marking Package Packaging STD86N3LH5 86N3LH5 DPAK Tape and reel May 2015 This is information on a product in full production. DocID15575 Rev 3 1/17 www.st.com Contents STD86N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ............................................... 8 DocID15575 Rev 3 STD86N3LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0 V) 30 V VDS Drain-source voltage (VGS = 0 V) @ TJMAX 35 V VGS Gate-source voltage 20 V ID (1) Drain current (continuous) at TC = 25 C 80 A ID Drain current (continuous) at TC = 100 C 55 A Drain current (pulsed) 320 A Total dissipation at TC = 25 C 70 W Derating factor 0.47 W/C Single pulse avalanche energy 165 mJ -55 to 175 C 175 C Value Unit Thermal resistance junction-case max 2.14 C/W Thermal resistance junction-pcb max 50 C/W IDM (2) PTOT EAS (3) Tstg Storage temperature Max. operating junction temperature Tj 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25C, ID = 40 A, VDD = 25 V Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on 1 inch FR-4 Oz Cu board DocID15575 Rev 3 3/17 17 Electrical characteristics 2 STD86N3LH5 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown Voltage ID = 250 A, VGS= 0 V 30 - - V IDSS Zero gate voltage drain current (VGS = 0 V) VDS = 20 V VDS = 20 V,Tc = 125 C - - 1 10 A A IGSS Gate body leakage current (VDS = 0 V) VGS = 20 V - - 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 1 1.8 2.5 V Static drain-source onresistance VGS = 10 V, ID = 40 A - 0.0045 0.005 RDS(on) VGS = 5 V, ID = 40 A - 0.0055 0.0065 V(BR)DSS Table 5. Dynamic Symbol Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Qgs1 Pre Vth gate-to-source charge Qgs2 Post Vth gate-to-source charge RG 4/17 Parameter Gate input resistance VDS = 25 V, f=1 MHz, VGS = 0 V VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 f = 1 MHz gate bias Bias = 0 test signal level = 20 mV, open drain DocID15575 Rev 3 Min. Typ. Max. Unit - 1850 - pF - 380 - pF - 58 - pF - 14 - nC - 6.8 - nC - 4.7 - nC - 2.3 - nC - 4.5 - nC - 1.2 - STD86N3LH5 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 15 V, ID = 40 A, RG = 4.7 , VGS = 5 V Figure 15 Rise time Turn-off delay time Fall time Min. Typ. Max. Unit - 6 - ns - 14 - ns - 23.6 - ns - 10.8 - ns Min. Typ. Max. Unit - 80 320 A A 1.1 V Table 7. Source drain diode Symbol Parameter Test conditions ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 40 A, VGS = 0 - trr Reverse recovery time - 31.8 ns Qrr Reverse recovery charge - 26.1 nC IRRM Reverse recovery current ISD = 80 A, di/dt = 100 A/s, VDD = 20 V Figure 17 - 1.6 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% DocID15575 Rev 3 5/17 17 Electrical characteristics 2.1 STD86N3LH5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance AM03396v1 RDS(on) (m) 6.5 6.0 VGS=5V 5.5 5.0 VGS=10V 4.5 4.0 3.5 3.0 0 6/17 DocID15575 Rev 3 10 20 30 40 50 60 70 80 ID(A) STD86N3LH5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics DocID15575 Rev 3 7/17 17 Test circuit 3 STD86N3LH5 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F IG=CONST VDD VGS 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/17 0 DocID15575 Rev 3 10% AM01473v1 STD86N3LH5 Test circuit Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd DocID15575 Rev 3 9/17 17 Package information 4 STD86N3LH5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 DocID15575 Rev 3 STD86N3LH5 Package information Figure 20. DPAK (TO-252) type A2 outline BW\SH$BUHY DocID15575 Rev 3 11/17 17 Package information STD86N3LH5 Table 8. DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 V2 5.25 6.60 1.00 R 12/17 Max. 0.20 0 8 DocID15575 Rev 3 STD86N3LH5 Package information Figure 21. DPAK (TO-252) footprint (a) )3BB5 a. All dimensions are in millimeters DocID15575 Rev 3 13/17 17 Packing information 5 STD86N3LH5 Packing information Figure 22. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 14/17 DocID15575 Rev 3 STD86N3LH5 Packing information Figure 23. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 9. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID15575 Rev 3 18.4 22.4 15/17 17 Revision history 6 STD86N3LH5 Revision history Table 10. Document revision history 16/17 Date Revision Changes 10-Apr-2009 1 First release. 22-Mar-2011 2 VGS value has been corrected in Table 2 and Table 4. 13-May-2015 3 Updated title, features and description in cover page. Updated Section 4: Package information. DocID15575 Rev 3 STD86N3LH5 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved DocID15575 Rev 3 17/17 17