MAXIMUM RATINGS: (TC=25°C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS
Collector-Base Voltage VCBO 40 60 80 100 V
Collector-Emitter Voltage VCEO 40 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 6.0 A
Peak Collector Current ICM 10 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 65 W
Power Dissipation (TA=25°C) PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICEO V
CE=30V (TIP41, TIP41A) 0.7 mA
ICEO V
CE=60V (TIP41B, TIP41C) 0.7 mA
ICES VCE=Rated VCEO 0.4 mA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=30mA (TIP41) 40 V
BVCEO I
C=30mA (TIP41A) 60 V
BVCEO I
C=30mA (TIP41B) 80 V
BVCEO I
C=30mA (TIP41C) 100 V
VCE(SAT) I
C=6.0A, IB=0.6A 1.5 V
VBE(ON) V
CE=4.0V, IC=6.0A 2.0 V
hFE V
CE=4.0V, IC=0.3A 30
hFE V
CE=4.0V, IC=3.0A 15 75
hfe V
CE=10V, IC=0.5A, f=1.0kHz 20
fT V
CE=10V, IC=0.5A, f=1.0MHz 3.0 MHz
ton I
C=6.0A, IB1= IB2=0.6A, RL=5.0Ω 0.6 μs
toff I
C=6.0A, IB1= IB2=0.6A, RL=5.0Ω 1.0 μs
TIP41
TIP41A
TIP41B
TIP41C
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP41 SERIES
types are NPN Epitaxial-Base Silicon Power
Transistors designed for power amplifier and high
speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (13-December 2010)
www.centralsemi.com
TIP41
TIP41A
TIP41B
TIP41C
NPN SILICON
POWER TRANSISTOR
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (13-December 2010)
