2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–315 March 5
,
2000-02
FEATURES
• Current Transfer Ratio
– SFH6916, 50%–300%
• SOP (Small Outline Package)
• Isolation Test Voltage, 3750 V
RMS
(1.0 s)
• High Collector-Emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, 0.050" (1.27 mm) Spacing
• Underwriters Lab File #52744
DESCRIPTION
The SFH6916 family has a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon
planar phototransistor detector, and is incorporated in
a 16 pin 50 mil lead pitch miniflat package. It features
a high current transfer ratio, low coupling capacitance,
and high isolation voltage.
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
SFH6916
Phototransistor Optocoupler
Quad Miniflat Package
.
Absolute Maximum Ratings,
T
A
=25
°
C (except where noted)
Emitter
Reverse Voltage ................................................................................ 6.0 V
DC Forward Current........................................................................ 50 mA
Surge Forward Current (
t
P
≤
10 µs)..................................................... 2.5 A
Total Power Dissipation per channel ..............................................80 mW
Detector
Collector-Emitter Voltage ................................................................... 70 V
Emitter-Collector Voltage .................................................................. 7.0 V
Collector Current............................................................................. 50 mA
Collector Current (
t
P
≤
1.0 ms) ........................................................ 100 mA
Total Power Dissipation per channel ............................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector (1.0 s)..................................................................... 3750 V
RMS
Creepage..................................................................................
≥
5.33 mm
Clearance .................................................................................
≥
5.08 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .................................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C .................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ...............................................................
≥
10
11
Ω
Storage Temperature Range .............................................. –55 to +125
°
C
Ambient Temperature Range ............................................. –55 to +100
°
C
Junction Temperature ......................................................................100
°
C
Soldering Temperature (max. 10 s Dip Soldering
Distance to Seating Plane
≥
1.5 mm) ............................................260
°
C
Total Power Dissipation..................................................................70 mW
0.19 (4.83)
0.17 (4.32)
0.434 (11.02)
0.414 (10.52)
0.034 (0.87)
0.024 (0.61)
0.018 (0.46)
0.014 (0.36)
0.000 (0.00)
0.005 (0.13)
0.055 (1.40)
0.045 (1.14)
0.017 (0.43)
0.013 (0.33)
0.220 (5.59)
0.200 (5.08)
40°10°
0.008 (0.20)
0.004 (0.10)
0.280 (7.11)
0.260 (6.60)
0.200 (5.08)
0.220 (5.59)
0.080 (2.03)
0.075 (1.91)
1
2Emitter
Collector
Anode
Cathode 15
16
3
4Emitter
Collector
Anode
Cathode 13
14
5
6Emitter
Collector
Anode
Cathode 11
12
7
8Emitter
Collector
Anode
Cathode 9
10
Dimensions in inches (mm)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH6916
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–316 March 5
,
2000-02
Table 1. Electrical Characteristics,
T
A
=25
°
C (except where noted)
Switching Times
(Typical)
Figure 1. Switching Operation
(without saturation)
Table 2.
I
C
=2.0 mA,
V
CC
=10 V,
T
A
=25
°
C
Description Symbol Min. Typ. Max. Unit Condition
Emitter (IR GaAs)
Forward Voltage
V
F
—1.15 1.4 V
I
F
=5 mA
Reverse Current
I
R
—0.01 10
µ
A
V
R
=6.0 V
Capacitance
C
O
—14 —pF
V
R
=0.0 V, f=1.0 MHz
Thermal Resistance
R
thJA
—1000 —K/W —
Detector (Si Phototransistor)
Leakage Current, Collector-Emitter
I
CEO
— — 100 nA
V
CE
=20 V
Capacitance
C
CE
—2.8 —pF
V
CE
=5.0 V, f=1.0 MHz
Thermal Resistance
R
thJA
—500 —K/W —
Package
Collector-Emitter Saturation Voltage
V
CESAT
—0.1 0.4 V
I
F
=20 mA,
I
C
=1.0 mA
Coupling Capacitance
C
C
—1.0 —pF f=1.0 MHz
Current Transfer Ratio CTR 50 —300 %
I
F
=5.0 mA,
V
CC
=5.0 V
Parameter Symbol Value Unit
Load Resistance
R
L
100
Ω
Rise Time
t
r
4.0
µ
s
Fall Time
t
f
3.0
Turn on Time
t
ON
5.0
Turn off Time
t
OFF
4.0
50 Ω
IF
IC
VCC=10 V
RL=100 Ω
Figure 2. Switching Operation
(with saturation)
Table 3.
I
F
=16.0 mA,
V
CC
=5.0 V,
T
A
=25
°
C
Parameter Symbol Value Unit
Load Resistance
R
L
1.9 k
Ω
Rise Time
t
r
15
µ
s
Fall Time
t
f
0.5
Turn on Time
t
ON
1.0
Turn off Time
t
OFF
30
50 Ω
IF
IC
VCC=5 V
RL=1.9 KΩ
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH6916
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–317 March 5
,
2000-02
Figure 3. Diode Forward Voltage vs. Forward Current
Figure 4. Collector Current vs. Collector Emitter Voltage
Figure 5. Collector to Emitter Dark Current vs. Ambient
Temperature
Forward Voltage, V
F
(V)
Forward Current, I
F
(mA)
0.01 0.10 1.00 10.00 100.00
1.6
1.4
1.1
0.9
0.6
T=–25°C
T=–55°C
T=0°C
T=50°C
T=75°C
T=100°C
T=25°C
80
70
60
50
40
30
20
10
0
0246810
Collector to Emitter Voltage, Vce (V)
IF=30 mA
Collector Current, Ic (mA)
IF=20 mA
IF=5 mA
IF=10 mA
IF=15 mA
Collector to Emitter Dark Current,Iceo (nA)
Ambient Temperature, T
A
(
°C)
1000.0
100.0
10.0
1.0
–60 –40 –20 0 20 40 60 80 100
12 V
24 V
40 V
Figure 6. Collector Current vs. Collector-Emitter Saturation
Voltage
Figure 7. Normalized Output Current vs. Ambient
Temperature
Figure 8. Normalized Output Current vs. Ambient
Temperature
Collector Current (mA)
Collector-emitter Saturation Voltage, VCE(sat)(V)
100.000
10.000
1.000
0.100
0.010
0.001
0.0 0.2 0.4 0.6 0.8 1.0
I
F=25 mA
I
F=10 mA
I
F=5.0 mA
I
F=2.0 mA
I
F=1.0 mA
Normalized Output Current, CTR
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Ambient Temperature, TA (
°C)
–60 –40 –20 0 20 40 60 80 100
Normalized to 1.0 at TA=25
°C
IF=1.0 mA, VCE=5.0 V
Ambient Temperature, TA (
°C)
Normalized to 1.0 at TA=25
°C
IF=1.0 mA, VCE=5.0 V
Normalized Output Current, CTR
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–60 –40 –20 0 20 40 60 80 100
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH6916
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–318 March 5
,
2000-02
Figure 9. Current Transfer Ratio vs. Forward Current
Figure 10. Switching Time vs. Load Resistance
Figure 11. Switching Time vs. Load Resistance
Current Transfer Ratio, CTR (%)
Forward Current, IF (mA)
300
250
200
150
100
50
0
0.1 1.0 10.0 50 100.0
VCE=5.0 V
Typical for
CTR=250%
Typical for
CTR=150%
Switching Time, (µs)
VCC=5.0 V
IC=2.0 mA
Load Resistance, RL (ohm)
100.
0
10.0
1.0
0.1
0 500 1000 1500 2000
ton
toff
td
ts
Switching Time, (µs)
Load Resistance, RL (Ω)
1000
100
10
1
0
100 1000 10000 100000
IF=5.0 mA
VCC=5.0 V
TA=25
°C
CTR=150%
tr
td
ts
tf
Figure 12. Switching Time Measurement
toff
tr
tpdon
ton
tdtf
10%
50%
90%
Output
Input
10%
50%
90%
ts
tpdoff
