SFH6916 Phototransistor Optocoupler Quad Miniflat Package . FEATURES * Current Transfer Ratio - SFH6916, 50%-300% * SOP (Small Outline Package) * Isolation Test Voltage, 3750 VRMS (1.0 s) * High Collector-Emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, 0.050" (1.27 mm) Spacing * Underwriters Lab File #52744 DESCRIPTION The SFH6916 family has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 16 pin 50 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. Dimensions in inches (mm) Anode 1 16 Collector Cathode 2 15 Emitter Anode 3 14 Collector Cathode 4 13 Emitter Anode 5 0.19 (4.83) 0.17 (4.32) 12 Collector Cathode 6 11 Emitter Anode 7 10 Collector Cathode 8 0.434 (11.02) 0.414 (10.52) 0.055 (1.40) 0.045 (1.14) 40 10 0.008 (0.20) 0.004 (0.10) 0.080 (2.03) 0.075 (1.91) 0.018 (0.46) 0.014 (0.36) 0.220 (5.59) 0.200 (5.08) 0.017 (0.43) 0.013 (0.33) 0.034 (0.87) 0.024 (0.61) 9 Emitter 0.000 (0.00) 0.005 (0.13) 0.200 (5.08) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) Absolute Maximum Ratings, TA=25C (except where noted) Emitter Reverse Voltage ................................................................................ 6.0 V DC Forward Current........................................................................ 50 mA Surge Forward Current (tP10 s) ..................................................... 2.5 A Total Power Dissipation per channel ..............................................80 mW Detector Collector-Emitter Voltage ................................................................... 70 V Emitter-Collector Voltage .................................................................. 7.0 V Collector Current............................................................................. 50 mA Collector Current (tP1.0 ms) ........................................................ 100 mA Total Power Dissipation per channel ............................................150 mW Package Isolation Test Voltage between Emitter and Detector (1.0 s)..................................................................... 3750 VRMS Creepage.................................................................................. 5.33 mm Clearance ................................................................................. 5.08 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 .................................................175 Isolation Resistance VIO=500 V, TA=25C ................................................................. 1012 VIO=500 V, TA=100C ............................................................... 1011 Storage Temperature Range .............................................. -55 to +125C Ambient Temperature Range ............................................. -55 to +100C Junction Temperature ......................................................................100C Soldering Temperature (max. 10 s Dip Soldering Distance to Seating Plane 1.5 mm) ............................................260C Total Power Dissipation..................................................................70 mW 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-315 March 5, 2000-02 Table 1. Electrical Characteristics, TA=25C (except where noted) Description Symbol Min. Typ. Max. Unit Condition Forward Voltage VF -- 1.15 1.4 V IF=5 mA Reverse Current IR -- 0.01 10 A VR=6.0 V Capacitance CO -- 14 -- pF VR=0.0 V, f=1.0 MHz Thermal Resistance RthJA -- 1000 -- K/W -- Leakage Current, Collector-Emitter ICEO -- -- 100 nA VCE=20 V Capacitance CCE -- 2.8 -- pF VCE=5.0 V, f=1.0 MHz Thermal Resistance RthJA -- 500 -- K/W -- Collector-Emitter Saturation Voltage VCESAT -- 0.1 0.4 V IF=20 mA, IC=1.0 mA Coupling Capacitance CC -- 1.0 -- pF f=1.0 MHz Current Transfer Ratio CTR 50 -- 300 % IF=5.0 mA, VCC=5.0 V Emitter (IR GaAs) Detector (Si Phototransistor) Package Switching Times (Typical) Figure 1. Switching Operation (without saturation) Figure 2. Switching Operation (with saturation) RL=100 IF RL=1.9 K IF VCC=10 V IC VCC=5 V IC 50 50 Table 2. IC=2.0 mA, VCC=10 V, TA=25C Table 3. IF=16.0 mA, VCC=5.0 V, TA=25C Parameter Symbol Value Unit Parameter Symbol Value Unit Load Resistance RL 100 Load Resistance RL 1.9 k Rise Time tr 4.0 s Rise Time tr 15 s Fall Time tf 3.0 Fall Time tf 0.5 Turn on Time tON 5.0 Turn on Time tON 1.0 Turn off Time tOFF 4.0 Turn off Time tOFF 30 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH6916 2-316 March 5, 2000-02 Figure 3. Diode Forward Voltage vs. Forward Current Figure 6. Collector Current vs. Collector-Emitter Saturation Voltage 1.6 100.000 T=-25C 10.000 1.4 T=0C 1.1 T=100C T=75C 0.9 T=50C T=25C Collector Current (mA) Forward Voltage, VF (V) T=-55C 0.6 0.01 0.10 1.00 10.00 Forward Current, IF (mA) I F=5.0 mA I F=2.0 mA 0.010 I F=1.0 mA 0.2 0.4 0.6 0.8 1.0 Collector-emitter Saturation Voltage, VCE(sat)(V) 1.4 Normalized Output Current, CTR Collector Current, Ic (mA) I F=10 mA 0.100 Figure 7. Normalized Output Current vs. Ambient Temperature 80 70 60 IF=30 mA 50 IF=20 mA 40 IF=15 mA 30 IF=10 mA 20 IF=5 mA 10 0 2 4 6 8 Collector to Emitter Voltage, Vce (V) 10 1.0 0.8 0.6 0.4 0.2 Normalized to 1.0 at T A=25C I F=1.0 mA, VCE=5.0 V -40 -20 0 20 40 60 80 100 80 100 Ambient Temperature, TA (C) Figure 8. Normalized Output Current vs. Ambient Temperature Figure 5. Collector to Emitter Dark Current vs. Ambient Temperature 1.2 24 V 40 V 100.0 12 V 10.0 Normalized Output Current, CTR 1000.0 1.0 -60 1.2 0.0 -60 0 Collector to Emitter Dark Current,Iceo (nA) I F=25 mA 0.001 0.0 100.00 Figure 4. Collector Current vs. Collector Emitter Voltage 1.000 -40 -20 0 20 40 60 Ambient Temperature, T A (C) 80 1.0 0.8 0.6 0.4 0.2 0.0 -60 100 Normalized to 1.0 at T A=25C I F=1.0 mA, VCE=5.0 V -40 -20 0 20 40 60 Ambient Temperature, TA (C) 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH6916 2-317 March 5, 2000-02 Figure 9. Current Transfer Ratio vs. Forward Current Figure 12. Switching Time Measurement 300 Input Current Transfer Ratio, CTR (%) VCE=5.0 V Typical for CTR=250% 200 tpdoff tpdon Output 150 Typical for CTR=150% 100 toff ton 250 td tf ts tr 10% 10% 50% 50% 90% 90% 50 0 0.1 1.0 10.0 50 100.0 Forward Current, IF (mA) Figure 10. Switching Time vs. Load Resistance Switching Time, (s) 100.0 ton 10.0 toff td ts 1.0 VCC=5.0 V I C=2.0 mA 0.1 0 500 1000 1500 Load Resistance, RL (ohm) 2000 Figure 11. Switching Time vs. Load Resistance Switching Time, (s) 1000 100 IF=5.0 mA VCC=5.0 V TA=25C CTR=150% tf ts 10 tr td 1 0 100 1000 10000 100000 Load Resistance, RL () 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH6916 2-318 March 5, 2000-02