TYPES 2NG326, 2N6327, 2N6328 A P i SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION ce = CT INPUT oo" MONETE coc Se wee MONETOR OUTPUT : MONITOR i NiSi< no ate ~ 1082 Cana, S; 4 +l} INGT4 INQ14 INgI4: , ~42Y~ 90% i S) | iNPUT ove -- 2 + TSN it [A -33 { 22, =90n 105 270 pF : |" BBe . | 5 tee wm ione me tote! : | I 0% SQ - 36% Vep27 it - { TAF . OUTPUT a LU) Veer : we HH oon he | ' aa | | = Vec=30V 4, | | 7 i | ' \ Vep1 vaav = CJUST FOR T. Von = 42 VAT ' 4 + . INPUT MONETGR TEST CIRCUIT VOLTAGE WAVEFORMS NOTES. A Vgen 18 3 30- ouise fram 0 W) into a 50-22 termination, B. The Vien waveform 5 supcied by agenerator with the fotiowing charactenstics tp = 1S 98 te "S45. Zou, = 502 ty = 20 us, duty cveie 2% C. Wavetorms are manitored 30 an oscilloscope with the folowing characteristics t, S 15 ns, Rin 2 SOMO Ci, S 11.5 pF DO. Resistors must be ores gucie types . The de oower suppires May reguire acdinonal bypassing in order fo minimize ringing FIGURE 1 INDUCTIVE LOAD SWITCHING {9) + / Yce MONITOR - a ty 4.5 ms (See Note A) _ . | INPUT oS 26 mri VOLTAG | : j20 mr LTAGE -SV_.- INPUT were ; 1 TuT 4, COLLECTOR aon 1 2 a CURRENT 0 ; ye | Veo 20V = OR : i = ia MONIT : . c MONT ViBRICER ~~ - | ge270 a) COLLECTOR | + | Rg =O1k * VOLTAGE | Vaat =1C Vo | | Lo 4 + ov | 4 VCEisat) - oo TEST CIRQUIT VOLTAGE AND CURRENT WAVEFORMS NOTE A: tmout pulse width is increased Gert bern 7 TEXAS INISTOLWENT - 4 AueTYPES 2N6326, 2N6327, 2N6328 N-P-N SILICON POWER TRANSISTORS LL eS ses MAXIMUM SAFE OPERATING AREAS MAXIMUM COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE 100 cs 70 = To < 25C 100 Nonrepetitive Pulse Operation 70 < 40 < | | 3 : 9 0 tw = 0.05 ms 5 20 S tw = 0.1 ms 8 a 4 'w 0.5 ms 3 3 tw = 1 ms 3 (10 E 2 [o-c Operation t 7 3 pfedt! 3 3 - , x 07 2N6326 x = = ; 0.4 2N6327 i 2 hoot | 2 2 0.2 2N6328 0.1 1 4 7 10 20 40 70100 200 400 VceCollector-Emitter VoltageV FIGURE 3 NOTE 8 Above this point the safe operating area has nat been datined 010204071 2 VAXIMUM COLLECTOR CURRENT VS UNCLAMPED INDUCTIVE LOAD Veco =20V Rep? =1002 To = 25C _ See Figure 2 t: [ t ' | See Note 8. ny 4 I I ae : od t i } too 4 710 20 40 L~Unciamped !nduct.ve Load~mH FIGURE 4 100 THERMAL INFORMATION CASE TEMPERATURE DISSIPATION DERATING CURVE FREE-AiR TEMPERATURE DISSIPATION OERATING CURVE NN Reda < 35C/W N\ \ NN N 2 250 = 6 I c S 225 g 3 8 5 a 200 a 2 a a > 178 2 4 gS 2 @ 150 3 a Resc <0.875C/w 2 3 125 a 3 Q 2 E100 z 9 a) oO 75 : E 3 e * 1 0 a a 0 28 50 75 100 125 150 175 200 0 Tc-Case Temperature"C FIGURES 25 50 $75 100 125 150 175 200 TaFree-Air Temperature"C FIGURE 6 a ree UNITED KINGDOM FRANCE N GERMANY ITALY Regional Technology Centre Texas Instruments France Texas instruments Texas instruments Texas Instruments Limited Boite Postale 5 land GmbH. Semiconduttori ttalia S.P.A. Manton Lane Bedford MK41 7PA Telephone: (0234) 67466 Telex: 82178 Technical Enquiry Service Telephone: (0234) 223000 06270 Villeneuve Louber Telephone: (93) 200101 8050 Freising Telex: 470127 Telex: 526529 P.D.S. 136 Haggertystrasse 1 Telephone: 08161 800 Divisione Semiconduttori Viale deile Scienze 1 02015 Cittaducate (Rieti! Telephone: (0746) 6941 Telex: 611003