MMBT3904TT1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 1 1Publication Order Number:

MMBT3904TT1/D

MMBT3904TT1

General Purpose

Transistors

MMBT3904TT1 – NPN Silicon

This transistor is designed for general purpose amplifier

applications. It is housed in the SOT–416/SC–75 package which is

designed for low power surface mount applications.

•Device Marking:

MMBT3904TT1 = AM

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO 40 Vdc

Collector–Base Voltage VCBO 60 Vdc

Emitter–Base Voltage VEBO 6.0 Vdc

Collector Current – Continuous IC200 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation,

FR–4 Board (1)

TA = 25°C

Derated above 25°C

PD200

1.6

mW/°C

Thermal Resistance,

Junction to Ambient (1) RθJA 600 °C/W

Total Device Dissipation,

FR–4 Board (2)

TA = 25°C

Derated above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction to Ambient (2) RθJA 400 °C/W

Junction and Storage

Temperature Range TJ, Tstg –55 to

+150 °C

(1) FR–4 @ Minimum Pad

(2) FR–4 @ 1.0 × 1.0 Inch Pad

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Device Package Shipping

ORDERING INFORMATION

MMBT3904TT1 SOT–416

CASE 463

SOT–416/SC–75

STYLE 1

3000 / Tape & Reel

DEVICE MARKING

See Table

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

COLLECTOR

BASE

EMITTER

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(IC = 1.0 mAdc, IB = 0) V(BR)CEO 40

–40 –

–

Vdc

Collector–Base Breakdown Voltage

(IC = 10 Adc, IE = 0) V(BR)CBO 60

–40 –

–

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 Adc, IC = 0) V(BR)EBO 6.0

–5.0 –

–

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) IBL –

–50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX –

–50

nAdc

ON CHARACTERISTICS (3)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE 40

100

–

300

–

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) –

–0.2

0.3

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat) 0.65

–0.85

0.95

Vdc

(3) Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

Figure 1. Normalized Thermal Response

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

0.001

0.01

0.1

1.0

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 – MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo – 4.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 8.0 pF

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k Ω

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10–4

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 –

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) NF – 5.0 dB

SWITCHING CHARACTERISTICS

Delay Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc) MMBT3904TT1 td– 35

Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904TT1 tr– 35 ns

Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) MMBT3904TT1 ts– 200

Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904TT1 tf– 50 ns

Figure 2. Delay and Rise Time

Equivalent Test Circuit Figure 3. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916 CS < 4 pF*

+3 V

275

10 k

CS < 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V

+10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 s

* Total shunt capacitance of test jig and connectors

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TYPICAL TRANSIENT CHARACTERISTICS

Figure 4. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

Figure 5. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

Cibo

Cobo

TJ = 25°C

TJ = 125°C

Figure 6. Turn–On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

Figure 7. Rise Time

IC, COLLECTOR CURRENT (mA)

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

t , RISE TIME (ns)

Figure 8. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 9. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

t , STORAGE TIME (ns)

′

VCC = 40 V

IC/IB = 10

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

IC/IB = 10

IC/IB = 20

IC/IB = 10

IC/IB = 20

t′s = ts - 1/8 tf

IB1 = IB2

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TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 10. Noise Figure

f, FREQUENCY (kHz)

0.1

Figure 11. Noise Figure

RS, SOURCE RESISTANCE (k OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 A

IC = 100 A

SOURCE RESISTANCE = 200 

IC = 1.0 mA

SOURCE RESISTANCE = 200 

IC = 0.5 mA

SOURCE RESISTANCE = 500 

IC = 100 A

SOURCE RESISTANCE = 1.0 k

IC = 50 A

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 12. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 13. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , CURRENT GAIN

h , OUTPUT ADMITTANCE ( mhos)

Figure 14. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 15. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (X 10 )

h , INPUT IMPEDANCE (k OHMS)

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0



-4

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TYPICAL STATIC CHARACTERISTICS

Figure 16. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

h , DC CURRENT GAIN (NORMALIZED)

0.5 2.0 3.0 10 50 70

0.2 0.3

0.1 100

1.00.7 200

30205.0 7.0

VCE = 1.0 V

TJ = +125°C

+25°C

-55°C

MMBT3904WT1

Figure 17. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

Figure 18. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

1.2

0.2

Figure 19. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

0100

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100

COEFFICIENT (mV/ C)

200

-1.0

-1.5

-2.0

200

TJ = 25°C

VBE(sat) @ IC/IB =10

VCE(sat) @ IC/IB =10

VBE @ VCE =1.0 V

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

VC FOR VCE(sat)

VB FOR VBE(sat)

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ÉÉÉ

1.4

0.5 min. (3x)

TYPICAL

0.5

SOLDERING PATTERN

Unit: mm

PD = TJ(max) – TA

RθJA

PD = 150°C – 25°C

833°C/W = 150 milliwatts

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied dur-

ing cooling

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

INFORMATION FOR USING THE SOT–416 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

SOT–416/SC–90 POWER DISSIPATION

The power dissipation of the SOT–416/SC–90 is a func-

tion of the pad size. This can vary from the minimum pad

size for soldering to the pad size given for maximum power

dissipation. Power dissipation for a surface mount device

is determined by TJ(max), the maximum rated junction tem-

perature of the die, RθJA, the thermal resistance from the

device junction to ambient; and the operating temperature,

TA. Using the values provided on the data sheet, PD can be

calculated as follows.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature TA of 25°C, one

can calculate the power dissipation of the device which in

this case is 125 milliwatts.

The 833°C/W assumes the use of the recommended foot-

print on a glass epoxy printed circuit board to achieve a

power dissipation of 150 milliwatts. Another alternative

would be to use a ceramic substrate or an aluminum core

board such as Thermal Clad. Using a board material such

as Thermal Clad, a higher power dissipation can be

achieved using the same footprint.

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

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STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

SOAK"

STEP 3

HEATING

ZONES 2 & 5

RAMP"

STEP 4

HEATING

ZONES 3 & 6

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO 219°C

PEAK AT

SOLDER JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

100°C

150°C

160°C

140°C

Figure 20. Typical Solder Heating Profile

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

170°C

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session t o the next. Figure 7 shows a typical heating profile

for use when soldering a surface mount device to a printed

circuit board. This profile will vary among soldering

systems but it is a good starting point. Factors that can

affect the profile include the type of soldering system in

use, density and types of components on the board, type of

solder used, and the type of board or substrate material

being used. This profile shows temperature versus time.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

The line on the graph shows the actual temperature that

might be experienced on the surface of a test board at or

near a central solder joint. The two profiles are based on a

high density and a low density board. The Vitronics

SMD310 convection/infrared reflow soldering system was

used to generate this profile. The type of solder used was

62/36/2 Tin Lead Silver with a melting point between

177–189°C. When this type of furnace is used for solder

reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a lar ge surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

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PACKAGE DIMENSIONS

SC–75 (SC–90, SOT–416)

CASE 463–01

ISSUE B

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A0.70 0.80 0.028 0.031

B1.40 1.80 0.055 0.071

C0.60 0.90 0.024 0.035

D0.15 0.30 0.006 0.012

G1.00 BSC 0.039 BSC

H--- 0.10 --- 0.004

J0.10 0.25 0.004 0.010

K1.45 1.75 0.057 0.069

L0.10 0.20 0.004 0.008

S0.50 BSC 0.020 BSC

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) B

–A–

–B–

3 PL

0.20 (0.008) A

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

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Notes

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Notes

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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PUBLICATION ORDERING INFORMATION

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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

MMBT3904TT1/D

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