LESHAN RADIO COMPANY, LTD.
G20–1/2
1
3
2
CASE 318–08, STYLE 12
SOT– 23 (TO–236AB)
MMBD2835LT1
MMBD2836LT1
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage MMBD2835LT1 V R35 Vdc
MMBD2836LT1 75
Forward Current I F100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board (1) P D 225 mW
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θ JA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θ JA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
MMBD2835L T1 = A3X;MMBD2836LT1=A2X
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE )
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I R = 100 µAdc) MMBD2835LT1 V (BR) 35 — Vdc
MMBD2836LT1 75 —
Reverse Voltage Leakage Current I RnAdc
(V R = 30 Vdc) MMBD2835LT1 — 100
(V R = 50 Vdc) MMBD2836LT1 — 100
Diode Capacitance C T— 4.0 pF
(V R = 0, f = 1.0 MHz)
Forward Voltage(I F = 10 mAdc) V F — 1.0 Vdc
(I F = 50 mAdc) — 1.0
(I F = 100 mAdc) — 1.2
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0mAdc) (Figure 1)
t rr — 4.0 ns
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Monolithic Dual Switching Diodes
2
CATHODE
CATHODE
1
ANODE
3