Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold - 2.0V max. High input impedance Low input capacitance - 50pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Package Device TN0110 Wafer / Die Options TO-92 NW (Die in wafer form) NJ (Die on adhesive tape) ND (Die in waffle pack) TN0110N3-G TN1510NW TN1510NJ TN1510ND For packaged products, -G indicates package is RoHS compliant (`Green'). Devices in Wafer / Die form are RoHS compliant (`Green'). Refer to Die Specification VF15 for layout and dimensions. Product Summary Pin Configurations RDS(ON) ID(ON) VGS(th) (V) (max) () (min) (A) (max) (V) 100 3.0 2.0 2.0 Device BVDSS/BVDGS TN0110N3-G Absolute Maximum Ratings SOURCE Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature DRAIN -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. GATE TO-92 (N3) Product Marking SiTN 0 1 1 0 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TN0110 Thermal Characteristics ID ID Power Dissipation jc Package (continuous) (mA) (pulsed) (A) @TC = 25OC (W) ( C/W) TO-92 350 2.0 1.0 125 O ( C/W) IDR (mA) IDRM 170 350 2.0 O ja (A) Notes: ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 0.5mA Change in VGS(th) with temperature - -3.2 -5.0 IGSS Gate body leakage - - 100 nA VGS = 20V, VDS = 0V - - 10 A IDSS Zero Gate voltage drain current VGS = 0V, VDS = Max Rating - - 500 A VGS = 0V, VDS = 0.8 Max Rating, TA = 125C ID(ON) ON-state drain current 0.75 1.4 - 2.0 3.4 - - 2.0 4.5 - 1.6 3.0 - 0.6 1.1 225 400 - VGS(th) RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/OC VGS = VDS, ID= 1.0mA A %/ C O VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 250mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA GFS Forward transductance CISS Input capacitance - 50 60 COSS Common source output capacitance - 25 35 CRSS Reverse transfer capacitance - 4.0 8.0 td(ON) Turn-on delay time - 2.0 5.0 Rise time - 3.0 5.0 Turn-off delay time - 6.0 7.0 Fall time - 3.0 6.0 1.0 1.5 V VGS = 0V, ISD = 500mA 400 - ns VGS = 0V, ISD = 500mA tr td(OFF) tf VSD trr Diode forward voltage drop Reverse recovery time - mmho VDS = 25V, ID = 500mA pF ns VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 1.0A, RGEN = 25 Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% Pulse Generator INPUT 0V 10% t(ON) t(OFF) tr td(ON) VDD OUTPUT 0V td(OFF) 90% Supertex inc. OUTPUT RGEN tf INPUT 10% 10% RL D.U.T. 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 TN0110 Typical Performance Curves Output Characteristics 5.0 Saturation Characteristics 5.0 4.0 4.0 VGS = 10V ID (amperes) ID (amperes) VGS = 10V 3.0 8V 2.0 6V 1.0 10 20 30 40 VDS (volts) 1.0 4V 2V 2V 0 0 50 2.0 4.0 6.0 8.0 10 VDS (volts) Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 0.5 8V 2.0 6V 4V 0 0 3.0 2.0 TA = -55 C O 0.4 0.3 TA = 150OC PD (watts) GFS (siemens) TA = 25OC 0.2 TO-92 1.0 0.1 0 VDS = 25V 0 0.6 1.2 1.8 2.4 0 3.0 0 25 50 ID (amperes) 10 Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) TC = 25OC TO-92 (pulsed) ID (amperes) 1.0 TO-92 (DC) 0.1 0.01 1.0 10 100 100 125 150 Thermal Response Characteristics 0.8 0.6 0.4 TO-92 TC = 25OC PD = 1W 0.2 0 0.001 1000 0.01 0.1 1.0 10 tp (seconds) VDS (volts) Supertex inc. 75 TC (OC) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 TN0110 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.3 RDS(ON) (ohms) 1.0 1.0 3.0 2.0 1.0 0.9 0 50 100 0 150 0 1.0 2.0 Tj ( C) Transfer Characteristics 3.0 TA = -55OC 25OC 1.8 150OC 1.2 0.6 100 2.0 4.0 4.0 5.0 6.0 8.0 VGS (volts) V(th) and RDS Variation with Temperature 1.2 VGS(th) (normalized) 2.4 ID (amperes) 1.4 VDS = 25V 0 3.0 ID (amperes) O V(th) @ 0.5mA 1.0 1.2 1.0 RDS(ON) @ 10V, 0.5A 0.8 0.8 0.6 0.6 0.4 -50 10 1.4 0 50 100 0.4 150 Tj ( C) O Capacitance vs. Drain-to-Source Voltage 10 f = 1.0MHz Gate Drive Dynamic Characteristics VDS = 10V 8.0 VGS (volts) C (picofarads) 75 CISS 50 4.0 COSS 25 2.0 CRSS 0 VDS = 40V 55pF 6.0 0 10 20 30 0 0 40 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (volts) Supertex inc. 50pF 1.0 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) 0.8 -50 0 VGS = 10V VGS = 5.0V 4.0 1.2 BVDSS (normalized) On-Resistance vs. Drain Current 5.0 TN0110 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 .014 D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* .022 JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. (c)2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN0110 B030411 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5