Central BCX51 BCX52 BCX53 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-89 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING CODE: (SEE TABLE ON FOLLOWING PAGE) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg JA BCX51 45 45 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V ICBO VCB=30V, TA=125C IEBO VEB=5.0V BVCBO IC=100A (BCX51) 45 BVCBO IC=100A (BCX52) 60 BVCBO IC=100A (BCX53) 100 BVCEO IC=10mA (BCX51) 45 BVCEO IC=10mA (BCX52) 60 BVCEO IC=10mA (BCX53) 80 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IC=500mA hFE VCE=2.0V, IC=5.0mA 40 hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX51-10, BCX52-10, BCX53-10) 63 hFE VCE=2.0V, IC=150mA (BCX51-16, BCX52-16, BCX53-16) 100 hFE VCE=2.0V, IC=500mA 25 fT VCE=5.0V, IC=10mA, f=100MHz BCX52 BCX53 60 100 60 80 5.0 1.0 1.5 100 200 1.3 -65 to +150 96 TYP MAX 100 10 100 0.5 1.0 UNITS V V V A A mA mA W C C/W UNITS nA A nA V V V V V V V V 250 160 250 50 MHz R4 (3-April 2008) Central TM BCX51 BCX52 BCX53 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE DEVICE MARKING CODE BCX51 AA BCX51-10 AC BCX51-16 AD BCX52 AE BCX52-10 AG BCX52-16 AM BCX53 AH BCX53-10 AK BCX53-16 AL R4 (3-April 2008)