Bulletin I2402 rev. B 01/05 25RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities 25A Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM/ V RRM Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) 2 I t Units 25 A @ TC 85 85 C 40 40 A @ 50Hz 420 398 A @ 60Hz 440 415 A @ 50Hz 867 795 A2s @ 60Hz 790 725 A2s 100 to 1200 1400 to 1600 V V DRM/V RRM tq 25RIA 140 to 160 25 IT(RMS) ITSM 10 to 120 typical TJ www.irf.com 110 s - 65 to 125 C Case Style TO-208AA (TO-48) 1 25RIA Series Bulletin I2402 rev. B 01/05 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code V DRM /V RRM , max. repetitive peak and off-state voltage (1) V VRSM , maximum nonrepetitive peak voltage (2) V I DRM /I RRM max. 10 100 150 20 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 25RIA @ TJ = TJ max. mA 10 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms On-state Conduction 25RIA Parameter IT(AV) 10 to 120 140 to 160 Units Max. average on-state current 25 25 A @ Case temperature 85 85 C IT(RMS) Max. RMS on-state current 40 40 A ITSM Max. peak, one-cycle 420 398 A non-repetitive surge current 440 415 I2t Maximum I2t for fusing Conditions 180 sinusoidal conduction t = 10ms No voltage t = 8.3ms reapplied 100% VRRM 350 335 t = 10ms 370 350 t = 8.3ms reapplied Sinusoidal half wave, 867 795 t = 10ms No voltage Initial T J = TJ max. A2 s 790 725 t = 8.3ms reapplied 615 560 t = 10ms 100% VRRM t = 8.3ms reapplied 560 510 I2t Maximum I2t for fusing 8670 7950 A2s VT(TO)1 Low level value of threshold 0.99 0.99 V 1.40 1.15 10.1 11.73 5.7 10.05 1.70 --- t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. voltage VT(TO)2 High level value of threshold (I > x IT(AV)),TJ = TJ max. voltage rt1 Low level value of on-state m (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. slope resistance rt2 High level value of on-state (I > x IT(AV)),TJ = TJ max. slope resistance VTM Max. on-state voltage IH Maximum holding current 130 IL Latching current 200 --- 2 V Ipk= 79 A, TJ = 25C 1.80 mA TJ = 25C. Anode supply 6V, resistive load, www.irf.com 25RIA Series Bulletin I2402 rev. B 01/05 Switching Parameter di/dt 25RIA Units Max. rate of rise of turned-on current VDRM 600V VDRM 800V 180 200 160 VDRM 1600V 150 Typical turn-on time trr Typical reverse recovery time tq Typical turn-off time A/s Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A VDRM 1000V tgt Conditions TJ = TJ max., VDM = rated VDRM 0.9 TJ = 25C, at = rated VDRM/VRRM, TJ = 125C 4 s TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. Blocking Parameter dv/dt Max. critical rate of rise of 25RIA Units Conditions 100 V/s off-state voltage 300 (*) TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 25RIA160S90. Triggering Parameter PGM Maximum peak gate power 25RIA Units Conditions 8.0 W TJ = TJ max. PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 1.5 A TJ = TJ max. -VGM Maximum peak negative 10 V TJ = TJ max. gate voltage IGT VGT DC gate current required 90 to trigger 60 TJ = - 65C 35 TJ = 125C DC gate voltage required 3.0 TJ = - 65C to trigger 2.0 V 1.0 V mA IGD DC gate current not to trigger 2.0 mA VGD DC gate voltage not to trigger 0.2 V TJ = 25C Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied TJ = 25C TJ = 125C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value www.irf.com Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 25RIA Series Bulletin I2402 rev. B 01/05 Thermal and Mechanical Specification Parameter 25RIA Units Conditions TJ Max. operating temperature range - 65 to 125 C Tstg Max. storage temperature range - 65 to 125 C 0.75 K/W DC operation 0.35 K/W Mounting surface, smooth, flat and greased RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Allowable mounting torque wt 3.4 +0-10% Nm 30 lbf-in 23 +0-10% Nm 20 lbf-in Approximate weight 14 (0.49) Case style TO-208AA (TO-48) Non-lubricated threads Lubricated threads g (oz) See Outline Table RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180 0.17 0.13 120 0.21 0.22 90 0.27 0.30 60 0.40 0.42 30 0.69 0.70 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 25 RIA 160 2 1 S90 4 5 1 - Current code 2 - Essential part number 3 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M 5 - = Stud base TO-208AA (TO-48) M6 X 1 Critical dv/dt: None = 300V/s (Standard value) S90 4 3 M = 1000V/s (Special selection) www.irf.com 25RIA Series Bulletin I2402 rev. B 01/05 Outline Table Case Style TO-208AA (TO-48) 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) All dimensions in millimeters (inches) 25RIA Series (100 to 1200V) RthJC (DC) = 0.75 K/W 120 110 Conduction Angle 30 100 60 90 120 90 180 80 0 5 10 15 20 25 30 130 25RIA Series (100 to 1200V) R thJC (DC) = 0.75 K/W 120 110 Conduction Period 30 100 60 90 120 90 180 DC 80 0 10 20 30 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 40 5 25RIA Series 45 3K /W R 25 K/ W a elt -D 30 2 W K/ 35 =1 180 120 90 60 30 40 SA R th Maximum Average On-state Power Loss (W) Bulletin I2402 rev. B 01/05 4K /W 5K /W RMS Limit 20 15 Conduction Angle 10 25RIA Series (100 to 1200V) TJ = 125C 5 7K /W 0 0 5 10 15 20 25 Average On-state Current (A) 0 30 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) 60 DC 180 120 90 60 30 55 1 W K/ ta el -D 40 = 45 SA th 50 R 2K /W 35 R Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 3K /W 4K /W 30 25 RMS Limit 20 15 10 5 Conduction Period 5K /W 25RIA Series (100 to 1200V) TJ = 125C 7 K/W 0 0 5 10 15 20 25 30 35 Average On-state Current (A) 40 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C 350 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 325 300 275 250 225 25RIA Series (100 to 1200V) 200 175 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 6 450 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 375 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied RatedRRM V Reapplied 425 400 375 350 325 300 275 250 225 200 175 25RIA Series (100 to 1200V) 150 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 25RIA Series Bulletin I2402 rev. B 01/05 Instantaneous On-state Current (A) 1000 25RIA Series (100 to 1200V) 100 10 TJ = 25C TJ = 125C 1 0.5 1 1.5 2 2.5 Instantaneous On-state Voltage (V) 130 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Fig. 7 - Forward Voltage Drop Characteristics 25RIA Series (1400 to 1600V) R thJC (DC) = 0.75 K/W 120 110 Conduction Angle 100 30 60 90 120 90 180 80 5 10 15 20 25 25RIA Series (1400 to 1600V) R thJC (DC) = 0.75 K/W 120 110 Conduction Period 100 90 80 60 90 120 30 180 DC 70 0 30 5 10 15 20 25 30 35 40 45 Average On-state Current (A) Average On-state Current (A) Fig. 8 - Current Ratings Characteristics Fig. 9 - Current Ratings Characteristics 45 10 25RIA Series (1400 to 1600V) TJ = 125C 5 K/ W 3K /W 3.5 K/ W 4.5 K/W 6K /W aR elt -D Conduction Angle K/W .5 =0 15 SA R th RMS Limit 20 W K/ 25 2. 5 W K/ 30 2 35 /W 1K 180 120 90 60 30 40 5 1. Maximum Average On-state Power Loss (W) 0 130 7.5 K /W 0 0 5 10 15 20 25 Average On-state Current (A) 0 30 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 10 - On-state Power Loss Characteristics www.irf.com 7 25RIA Series 60 R 25RIA Series (1400 to 1600V) TJ = 125C 10 a elt -D Conduction Period K/ W 2K /W 2.5 K/W 3K /W 4K /W 5.5 K/W 7.5 K /W W K/ 20 .5 =0 30 RMS Limit A hS 40 1. 5 W K/ 50 Rt DC 180 120 90 60 30 1 Maximum Average On-state Power Loss (W) Bulletin I2402 rev. B 01/05 0 0 5 10 15 20 25 30 35 0 40 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Average On-state Current (A) Fig. 11 - On-state Power Loss Characteristics 400 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C 350 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 375 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 325 300 275 250 225 200 25RIA Series (1400 to 1600V) 175 150 1 10 100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated VRRMReapplied 375 350 325 300 275 250 225 200 175 25RIA Series (1400 to 1600V) 150 0.01 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 13 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ = 25C TJ = 125C 10 25RIA Series (1400 to 1600V) 1 0 1 2 3 4 5 6 Instantaneous On-state Voltage (V) Fig. 14 - Forward Voltage Drop Characteristics 8 www.irf.com 25RIA Series Transient Thermal Impedance Z thJC (K/W) Bulletin I2402 rev. B 01/05 1 Steady State Value R thJC = 0.75 K/W (DC Operation) 0.1 25RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 15 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (1) PGM = 16W, (2) PGM = 30W, (3) PGM = 60W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 1ms (a) (b) Tj = -65 C Tj = 125 C VGD Tj = 25 C 1 (1) IGD 0.1 0.001 (2) (3) (4) 25RIA Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 16 - Gate Characteristics www.irf.com 9