TPC6108
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS)
TPC6108
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)
High forward transfer admittance: |Yfs| = 7.4 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 4.5
Drain current
Pulse (Note 1) IDP 18
A
Drain power dissipation (t = 5 s) (Note 2a) PD 2.2
Drain power dissipation (t = 5 s) (Note 2b) PD 0.7
W
Single-pulse avalanche energy (Note 3) EAS 1.3 mJ
Avalanche current IAR 2.25 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 4)
EAR 0.22 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Circuit Configuration
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Rth (ch-a) 56.8 °C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a) 178.5 °C/W
Note: For Notes 1 to 4, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
Drain
Drain
Gate
Source
Drain
Drain
6 4
1 2 3
5
TPC6108
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ±10 μA
Drain cut-off current IDSS V
DS = 30 V, VGS = 0 V 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V30
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = 20 V15
V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 0.8 2.0 V
RDS (ON) V
GS = 4.5 V, ID = 2.2 A 75 100
Drain-source ON-resistance
RDS (ON) V
GS = −10 V, ID = 2.2 A 50 60
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.2 A 3.7 7.4 S
Input capacitance Ciss 570
Reverse transfer capacitance Crss 75
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
85
pF
Rise time tr 3.5
Turn-on time ton 12
Fall time tf 21
Switching time
Turn-off time toff
Duty 1%, tw = 10 μs 70
ns
Total gate charge
(gate-source plus gate-drain) Qg 13
Gate-source charge1 Qgs1 1.8
Gate-drain (“Miller”) charge Qgd
VDD ≈ −24 V, VGS 10 V,
ID = 4.5 A
2.5
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP 18 A
Forward voltage (diode) VDSF IDR = 4.5 A, VGS = 0 V 1.2 V
RL = 6.8 Ω
VDD ≈ −15 V
10 V
VGS 0 V
4.7 Ω
ID = 2.2 A
VOUT
TPC6108
2009-09-29
3
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -2.25 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: to the lower left of the Part No. marking indicates Pin 1.
Note 6 A dot marking identifies the indication of product Labels.
Without a dot: [[Pb]]/INCLUDES > MCV
With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Part No.
(or abbreviation code) S3H
Note 6
Lot code (month) Lot No. (weekly code)
Pin #1 Lot code
(year)
Product-specific code
TPC6108
2009-09-29
4
ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
23 4 5
0
4
6
8
10
2
01
46 8 10
0
0.4
0.6
0.8
1.0
0.2
02
100
0.1
1
0.1 1 10 100
10
0
2
3
4
5
0.4 0.6 0.8 1.00 0.2
2 4
0
5
10
15
0 1
10
1000
5
100
1
3
10 1 0. 1
Common source
Ta = 25°C
Pulse Test
VGS = 2.2V
4
3
2.6
2.4
2.8
10
3.5
4.5 Common source
Ta = 25°C
Pulse Test
VGS = 2.2V
4
3
2.6
2.4
2.8
10
3.5
4.5
Ta = 55°C 100
25
Common source
VDS = 10 V
Pulse Test
Common source
Ta = 25°C
Pulse Test
ID
=
4.5 A
1.1
2.2
100 Common source
VDS = 10 V
Pulse Test
Ta = 55°C
25
100
Common source
Ta = 25°C
Pulse Test
VGS = 4.5 V
10
Forward transfer admittance
Yfs (S)
Drain-source voltage VDS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain-source ON resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
TPC6108
2009-09-29
5
Vth Ta
0
80 040 80 120 16040
2.0
0.4
1.2
0.8
1.6
RDS (ON) Ta
0
50
100
40 80 1600 40 120 80
IDR VDS
PD Ta
2.0
0.5
1.0
1.5
0 0 8040 160120
40
0
30
20
10
0 8 12 4
8
4
16
0
12
150
10
0.1 100
100
1 10
10000
0.20 0.6 1.0 1.2
0.1
1
100
10
1000
Common source
Pulse Test
ID = 1.1/2.2/4.5 A
VGS = 10 V
VGS = −4.5 V
ID = 1.1/2.2/4.5 A
Common source
Ta = 25°C
Pulse Test
10
5
3
1VGS = 0 V
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
C
r
ss
Common source
VGS = 10 V
ID = 1 mA
Pulse Test
(2) DC
(1) t = 5s
(2) t = 5s
(1) DC
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
2.5
16 20
Common source
ID = 4.5 A
Ta = 25°C
Pulse Test
VDS
6 V
12 V
VDD = 24 V
VGS
Ambient temperature Ta (°C)
Gate threshold voltage
Vth (V)
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
Capacitance C (pF)
Capacitance – VDS
Drain-source voltage VDS (V)
Drain-source ON-resistance
RDS (ON) ( μΩ)
Ambient temperature Ta (°C)
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
Drain power dissipation
PD (W)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Dynamic input / output
characteristics
0.4 0.8
TPC6108
2009-09-29
6
rth tw
0.1 1 10
0.1
1m 10m 100m 1 10 100 1000
1
10
100
1
100
0.1 100
10
1000
SINGLE PULSE
Device mounted on a glass-epoxy
board (b) (Note 2b)
Device mounted on a glass-epoxy
board
(
a
)
(
Note 2a
)
Single pulse Ta=25
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Transient thermal
impedance rth (°C/W)
Safe Operating Area
Drain-source voltage VDS (V)
Pulse width tw (S)
Drain current ID (A)
TPC6108
2009-09-29
7
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.